Bandgap, Mobility, Dielectric Constant, and Baliga’s Figure of Merit of 4H-SiC, GaN, and β-Ga₂O₃ from 300 to 620 K

Abstract

Bandgap, mobility, and dielectric constant are important parameters to measure the properties of an opto-electric semiconductor material. Here, this work evaluates the temperature dependence of these basic parameters of the third-generation wide-bandgap semiconductors including 4H-SiC, GaN, and β-Ga 2 O 3 , based on which Baliga's figure of merit (BFOM = ε r × μ × E g 3) is obtained correspondingly. Experimental results indicate that as temperature increases, compared with that of 4H-SiC and GaN, the bandgap of β-Ga 2 O 3 shows an obvious shrinkage due to the strong electron−phonon interaction, but the static dielectric constants of these three semiconductors do not show significant changes in a higher temperature range. At room temperature, the BFOM of 4H-SiC and GaN is more dominant, but as temperature increases, the BFOM of the three materials decreases significantly due to the notable reduction of mobility and bandgap, which finally approaches each other at high temperature. Based on the results achieved, this work is expected to provide reference concerning the basic parameters of the third-generation wide-bandgap semiconductors and the corresponding changes appearing in a higher temperature range (300−620 K).

Growth optimization, optical, and dielectric properties of heteroepitaxially grown ultrawide-bandgap ZnGa2O4 (111) thin film

“…The bandgap, dielectric constant, and carrier mobility have a significant role in Baliga's figure of merit (B FOM ), which represents a very important parameter in determining the properties of (UWBG) semiconductors in optoelectronic and power electronics applications. 20 Therefore, the enhancement of these parameters, i.e., bandgap and dielectric constant of UWBG ZGO, is very important for the evaluation/improvement of the performance of power semiconductor devices.…”

Tailoring of the Structural, Optical, and Electrical Characteristics of Sol-Gel-Derived Magnesium-Zinc-Oxide Wide-Bandgap Semiconductor Thin Films via Gallium Doping

“…Wide-bandgap elemental semiconductor diamond (Eg = 5.5 eV) and compound semiconductors, β-Ga 2 O 3 (Eg = 4.9 eV), GaN (Eg = 3.4 eV), and ZnO (Eg = 3.35 eV), combine visible light transparency and high carrier mobility as well as high-temperature operational stability and a strong power-handling capability, and are usually applied in ultraviolet (UV) photodetectors, high-power electron devices, and transparent electronics [1][2][3][4]. The wurtzite structure Mg x Zn 1−x O (x ≤ 0.25) is a wide-bandgap ternary oxide semiconductor system with unique characteristics, such as intrinsic blindness to the visible light and radiation toughness, as well as low-temperature synthesis and wet-etch availability [5,6].…”

Photo-enhanced metal-assisted chemical etching of α-gallium oxide grown by halide vapor-phase epitaxy on a sapphire substrate and its applications

“…Furthermore, the BFOMs of a-Ga 2 O 3 is 1.64 times higher than that of b-Ga 2 O 3 , indicating superior performance of a-Ga 2 O 3 and demonstrating its potential for use in nextgeneration power electronics. [9][10][11] The devices and the processing of b-Ga 2 O 3 have been extensively studied; however, few studies have been thus far reported on the devices and processing of a-Ga 2 O 3 .…”