Bandgap modulation of low-dimensional γ-graphyne-1 under uniform strain

Rouzkhash, Behrouz; Salehi, Alireza; Ahmadi, Mohammad Taghi

doi:10.1007/s10825-020-01521-6

Cited by 8 publications

(3 citation statements)

References 41 publications

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“…[20] The calculated band gap in DFT methods are usually underestimated, particularly in large band gap materials suchlike γgraphyne-1 [26,25]. In this research, the calculated band gap energy in DFTB method is 1.34 eV agreed with the previous calculations and is between the comparably precise HSE06 method and the single experimental results [27,28]. Hence DFTB is a reliable method and is utilized in all calculations in this paper.…”

Section: Introductionsupporting

confidence: 74%

“…The 2AGyNT and 2ZGyNT are the smallest nanotubes but 2AGyNT has relatively lower chemical stability due to its low cohesive energy E coh = − 8.13eV whereas 3AGyNT and 2ZGyNT with nearly equal E coh = − 8.30eV have chemically higher stability. Besides diameter of 2AGyNT is 4.4nm with high in plain strain that causes to shrinkage length of its UR up to 2% [27]. As a result, in this paper two GAA homojunction p-i-n TFETs are constructed and investigated using 2ZGyNT and 3AGyNT with diameter values of 7.6 Å and 7.6√3/2= 6.6 Å, respectively.…”

Section: ( ) [ ( ) ( )]mentioning

confidence: 99%

“…Hence DFTB is a reliable method and is utilized in all calculations in this paper. The electronic and structural properties of γ-graphyne-1 sheets and nanotubes have been investigated and it is shown that the lower limit band gap energy of high diameter GyNTs is the band gap of γ-graphyne-1 sheet [27]. In 2016, Desai successfully synthesized a homojunction MOSFET with 3.9nm effective channel length.…”

Section: Introductionmentioning

confidence: 99%

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Ultrahigh on/off-current ratio γ-graphyne-1 nanotube-based sub-10-nm TFET modeling and simulation

Rouzkhash

Salehi²,

Ahmadi³

2022

J Comput Electron

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Utilizing γ-graphyne-1 nanotubes (GyNTs) in the Tunneling Field Effect Transistors (TFETs) suppresses ambipolarity and enhances subthreshold swing (SS) of TFETs which is because of large energy band gap and high electron effective mass of GyNTs. In this research analysis of structural, electronic and thermoelectric properties of γ-graphyne-1 family under the deformation potential (DP) approach reveals that electron-phonon mean free path (MFP) of an Armchair GyNT (3AGyNT) and Zigzag GyNT (2ZGyNT) are 45 and 290 nm, respectively. Therefore, ballistic transport of sub 10 nm 3AGyNT-TFETs and 2ZGyNT-TFETs in different channel lengths are investigated utilizing Non-Equilibrium Green's Function (NEGF) formalism in the DFTB platform. Ultrahigh Current Ratio (OOCR) value of 1.6 x 10 10 at V DD = 0.2 V and very low point SS of 5 mV/dec are belonged to the 3AGyNT-TFET with channel length of 9.6 nm. 2ZGyNT-TFETs shows higher on-state current and SS as well as lower OOCR than those of 3AGyNT-TFETs. A linear relationship between channel length and logarithmic off-state current is reported that is consistent with WKB approximation. The obtained results along with the ultralow power consumption of the suggested GyNT-TFETs, make them as replacement of digital silicon MOSFETs in the next generation nanoelectronic devices.

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