Bandgap narrowing in moderately to heavily doped silicon

Lanyon, H. P. D.; Tuft, Richard A.

doi:10.1109/t-ed.1979.19538

Cited by 155 publications

(36 citation statements)

References 2 publications

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“…Hence, we expect that the theory given in this work does not describe well the concentration region in which is nearly zero, but the large concentration region eV cm for Cu [47], and 3.5 x of N , = 1013 to 1017*1 (the upper limit depends on Eg)) usually investigated in thermal experiments. The mechanism of the reduction of the thermal impurity-to-band activation energy proposed in this paper has some analogy with the mechanism of the band gap narrowing in heavily doped semiconductors proposed recently by Lanyon and Tuft [49]. The screening of the potential of a given ionized donor by the redistribution of the mobile I)+ centres is connected with a reduction of the electrostatic field energy favouring charge neutrality.…”

Section: Calculation Of the Concentration Dependence Of The Thermal Asupporting

confidence: 71%

On the Concentration Dependence of the Thermal Impurity‐to‐Band Activation Energies in Semiconductors

Monecke

Siegel

Ziegler

et al. 1981

Physica Status Solidi (b)

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It is proved by Hall effect measurements on Te-doped GaP and on ZnSiP, that the thermal activation energies of the majority impurities depend on the minority impurity concentrations. A new theoretical explanation for this concentration dependence is presented.Mittels Halleffektmessungen an Te-dotiertem GaP und an ZnSiP, wird gezeigt, daB die thermischen Aktivierungsenergien der Majoritiitsstorstellen von der Konzentration der Minoritiitsstorstellen abhangen. Fur diese Konzentrationsabhiingigkeit wird cine neue theoretische E r k k u n g gegeben.It is well known that in doped and compensated semiconductors three types of conductivity mechanisms with different activation energies c3 < E~ < c1 can be found, in general (see e.g . [l]).To be specific we shall concentrate on a n n-type semiconductor in the following. I n this case c3 corresponds to the phonon-assisted hopping motion of electrons from neutral donors t o empty positive donors, the energy spread of the donor levels being caused by the fluctuating electric field of the charged impurities. This hopping motion is well understood on the basis of the theory of Miller and Abrahams The activation energy c1 is connected with the energy ED, necessary to excite an electron from a donor into the conduction band, and deviates from ED slightly due to the fact, that the temperature dependence of the mobility deviates from p -T P 3 l 2[5]. The energy E, or E D is of principle interest in semiconductor physics and technology. However, it is understood much less both theoretically and experimentally than cZ and E~: not only its absolute value for different impurities cannot be calculated theoretically in satisfying agreement with experimental results, but also its large concentration dependence (if measured as a thermal activation energy e.g. by Hall experiments) is not well established even experimentally as explained below.I n this paper we want to contribute both experimental results and a new theoretical explanation for the concentration dependence of E D of shallow impurities.The phenomenon of the concentration dependence of the thermal activation energy of impurity electrons into the nearest host energy band is known for more than

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Section: Calculation Of the Concentration Dependence Of The Thermal Asupporting

confidence: 71%

On the Concentration Dependence of the Thermal Impurity‐to‐Band Activation Energies in Semiconductors

Monecke

Siegel

Ziegler

et al. 1981

Physica Status Solidi (b)

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“…Referenced to the vacuum, energy levels are counted from the (arbitrary) value of -9.13 eV to the valence band edge at -5.17 eV, and then from the conduction band minimum, as calculated from Ref. [4], to the vacuum level.…”

Section: Resultsmentioning

confidence: 99%

“…For one, the doping concentration changes the density of states at the surface by adding excess majority carriers, which could have a large effect on electron tunneling rates between reactants and the surface. In addition to populating the bands, the band gap of Si narrows with increasing dopant density [4], which may also influence charge exchange. Until now, however, no study has been done to clarify if the bulk band gap, rather than the defects and dipole moment induced by the impurities themselves, affects the charge transfer, and hence the reaction rates.…”

Section: Introductionmentioning

confidence: 99%

Dopant enhanced neutralization of low-energy Li+scattered from Si(111)

2012

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The neutralization of 3 keV Li + ions scattered from Si(111) is measured as a function of doping density, dopant type, and hydrogen coverage. When the surfaces are saturated with hydrogen to unpin the Fermi level, the neutral fractions decrease for lightly doped samples, but become anomalously large for highly doped n-type Si. A simple model that includes the manybody band-gap narrowing effect predicts the neutralization to good accuracy using a tunneling mechanism similar to the free-electron gas jellium model normally employed for ion/metal interactions, but excluding levels in the gap.

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“…Наиболее существенный вклад в сужение ширины запрещенной зоны связан с обменным взаимодействием, что приводит к эмпирической зависимости вида ΔE g ~ γ×N(T) 1/3 , где γ -параметр, имеющий характер подгоночного к данным экспериментов. В работах [25] - [29] параметр γ определен в диапазоне 1×10 -8 ÷ 7.3×10 -8 эВсм. Тепловые и квантовые механизмы учтены в соотношении из [6], которое представляет модификацию (7)…”

Section: рис2 схема энергетических уровней металлов (а) диэлектрикunclassified

Thermophysical characteristics of an electron gas of silicon in the region of phase transformations

Koroleva

2018

KIAM Prepr.

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Bandgap narrowing in moderately to heavily doped silicon

Cited by 155 publications

References 2 publications

On the Concentration Dependence of the Thermal Impurity‐to‐Band Activation Energies in Semiconductors

On the Concentration Dependence of the Thermal Impurity‐to‐Band Activation Energies in Semiconductors

Dopant enhanced neutralization of low-energy Li+scattered from Si(111)

Thermophysical characteristics of an electron gas of silicon in the region of phase transformations

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