Bandgap Opening in Graphene Antidot Lattices: The Missing Half

Ouyang, Fangping; Peng, Shenglin; Liu, Zhongfan

doi:10.1021/nn200580w

Cited by 159 publications

(176 citation statements)

References 65 publications

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“…S9). These results open up another route for using graphene anti-dots to modify the electronic properties of graphene 25,26 . Why does the GNB emerge randomly on the surface?…”

Section: Resultsmentioning

confidence: 83%

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Transforming moiré blisters into geometric graphene nano-bubbles

2012

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strain engineering has been proposed as an alternative method for manipulating the electronic properties of graphene. However, the bottleneck for strain engineering in graphene has been the ability to control such strain patterns at the nanoscale. Here we show that high level of control can be accomplished by chemically modifying the adherence of graphene on metal. using scanning tunnelling microscopy, the shape evolution of graphene moiré blisters towards geometrically well-defined graphene bubbles was studied during the controlled, sub-layer oxidation of the ruthenium substrate. understanding the dynamics of the oxidation process and defects generation on the Ru substrate allows us to control the size, shape and the density of the bubbles and its associated pseudo-magnetism. We also show that a modification of the same procedure can be used to create antidots in graphene by catalytic reaction of the same nanobubbles.

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“…S9). These results open up another route for using graphene anti-dots to modify the electronic properties of graphene 25,26 . Why does the GNB emerge randomly on the surface?…”

Section: Resultsmentioning

confidence: 83%

“…4) at 650 K ( < etching temperature reported). Regular array of these holes on graphene can form antidots lattice that have been predicted to generate spin qubits 25,26 .…”

Section: Resultsmentioning

confidence: 99%

Transforming moiré blisters into geometric graphene nano-bubbles

2012

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“…Throughout in this paper we focus on triangular graphene antidot lattices: these systems are known to lead to a gap in the electronic spectrum, 42,43 which is essential for the present purposes. Due to the high lattice symmetry the number of independent lattice parameters is small, and furthermore, these systems are the most thoroughly studied, both theoretically and experimentally.…”

Section: Systems and Methodsmentioning

confidence: 99%

“…40 GALs have been proposed as a flexible platform for creating a semiconducting material with a band gap which can be tuned by varying the antidot size, shape, or lattice symmetry. 17,[41][42][43] GALs can be fabricated by electron beam lithography, 44,45 by block copolymer lithography 46,47 with hole distances down to 5 nm, and at a larger scale through nanorod photocatalysis 48 and anisotropic etching. 49 To the best of our knowledge, no studies have been reported on the thermal properties of finite GALs.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric properties of finite graphene antidot lattices

et al. 2011

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We present calculations of the electronic and thermal transport properties of graphene antidot lattices with a finite length along the transport direction. The calculations are based on a single orbital tight-binding model and the Brenner potential. We show that both electronic and thermal transport properties converge fast toward the bulk limit with increasing length of the lattice: only a few repetitions (~6) of the fundamental unit cell are required to recover the electronic band gap of the infinite lattice as a transport gap for the finite lattice. We investigate how different antidot shapes and sizes affect the thermoelectric properties. The resulting thermoelectric figure of merit, ZT, can exceed 0.25, and it is highly sensitive to the atomic arrangement of the antidot edges. Specifically, hexagonal holes with pure zigzag edges lead to an order-of-magnitude smaller ZT as compared to pure armchair edges. We explain this behavior as a consequence of the localization of states, which predominantly occurs for zigzag edges, and of an increased splitting of the electronic minibands, which reduces the power factor.Comment: 12 pages, 13 figures. Submitted to Phys. Rev.

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“…In GAL structure, the bandgap opening depends on the dimension of the holes as well as the wall distance between the holes. 17 The bandgap opening makes a nonzero effective mass which considerably degrades carrier mobility, resulting in an inverse relation with mobility in the graphene nanoribbon structures. 18 The electrical conductivity values in 3D-GN are higher than the previously reported values for nanoporous carbon 19 (3030 S/m).…”

Section: Thermoelectric Properties Of Nanoporous Three-dimensional Grmentioning

confidence: 99%

Thermoelectric properties of nanoporous three-dimensional graphene networks

Thiyagarajan

Yoon

Jang

2014

Applied Physics Letters

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We propose three dimensional-graphene nanonetworks (3D-GN) with pores in the range of 10 ∼ 20 nm as a potential candidate for thermoelectric materials. The 3D-GN has a low thermal conductivity of 0.90 W/mK @773 K and a maximum electrical conductivity of 6660 S/m @ 773 K. Our results suggest a straightforward way to individually control two interdependent parameters, σ and κ, in the nanoporous graphene structures to ultimately improve the figure of merit value.

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Bandgap Opening in Graphene Antidot Lattices: The Missing Half

Cited by 159 publications

References 65 publications

Transforming moiré blisters into geometric graphene nano-bubbles

Transforming moiré blisters into geometric graphene nano-bubbles

Thermoelectric properties of finite graphene antidot lattices

Thermoelectric properties of nanoporous three-dimensional graphene networks

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