2023
DOI: 10.1007/s10854-023-10869-x
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Bandgap reduction in rGO-doped CsTiBr3 perovskite nanorods by solvothermal method

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Cited by 1 publication
(2 citation statements)
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“…According to the I–V diagrams depicted in Figure c, the incorporation of GO resulted in a notable enhancement of the device conductivity by 27%. Furthermore, the activation energies of pristine devices and devices based on GO or rGO can be calculated using Arrhenius equation: ln 0.25em σ = E α k T + ln 0.25em α 0 where σ is resistivity at temperature T , E α is activation energy, k is the Boltzmann constant, and α 0 is the resistivity at temperature 0 K. The activation energy values of the pristine SnO 2 , rGO-based SnO 2, and GO-based SnO 2 obtained from the slopes of the ln α vs. 1/ T curve are 2.85, 2.35, and 2.13 kJ mol –1 , respectively. The decrease in activation energy can be achieved by increasing the device conductivity, improving response times, lowering the operating voltage, and enhancing overall device performance.…”
Section: Resultsmentioning
confidence: 99%
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“…According to the I–V diagrams depicted in Figure c, the incorporation of GO resulted in a notable enhancement of the device conductivity by 27%. Furthermore, the activation energies of pristine devices and devices based on GO or rGO can be calculated using Arrhenius equation: ln 0.25em σ = E α k T + ln 0.25em α 0 where σ is resistivity at temperature T , E α is activation energy, k is the Boltzmann constant, and α 0 is the resistivity at temperature 0 K. The activation energy values of the pristine SnO 2 , rGO-based SnO 2, and GO-based SnO 2 obtained from the slopes of the ln α vs. 1/ T curve are 2.85, 2.35, and 2.13 kJ mol –1 , respectively. The decrease in activation energy can be achieved by increasing the device conductivity, improving response times, lowering the operating voltage, and enhancing overall device performance.…”
Section: Resultsmentioning
confidence: 99%
“…32 Furthermore, as shown in Figure 4f According to the I−V diagrams depicted in Figure 5c, the incorporation of GO resulted in a notable enhancement of the device conductivity by 27%. Furthermore, the activation energies of pristine devices and devices based on GO or rGO can be calculated using Arrhenius equation: 33 = + E kT ln ln 0…”
Section: Resultsmentioning
confidence: 99%