Baranowski<i>et al</i>. reply

Baranowski, J. M.; Liliental‐Weber, Z.; Yau, W.; Weber, E. R.

doi:10.1103/physrevlett.68.551

Cited by 7 publications

(7 citation statements)

References 4 publications

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“…In must be a fast diffuser in GaAs since more than 100 gm of the GaAs wafer was removed _ _ prior to the first microwave absorption measurements. This finding was reported in the earlier communican_'on [4].…”

Section: Introductionsupporting

confidence: 85%

“…The microwave absorption experiments (FMMA) gave strong hints for the existence of a superconductive phase in the In diffused GaAs bulk material as well as in the GaAs/In(As) heterostructures. A strong FMMA signal was observed near zero field [1, 4,5]. In addition to this signal, a local maximum in FMMA amplitude was observed close to 300 Gs.This was in agreement with earlier observations [1,4].…”

Section: Resultsmentioning

confidence: 99%

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Defects In GaAs Bulk Crystals and Multi-Layers Caused by In Diffusion

et al. 1993

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The objective of this work was to study by transmission electron microscopy the lattice defects in GaAs bulk crystals and heterostructures formed by In diffusion. In such samples hints for the existence of superconductivity have been found. Indium was found to move more than 100 μm into bulk GaAs during lh annealing at 550ºC (such conditions are typical for molecular beam epitaxy growth on GaAs wafers). This rapid diffusion is accompanied by the creation of dislocation networks and metallic In droplets that show evidence for lattice strain. To study the interaction of In with the GaAs lattice, In/GaAs multi-layers were grown by MBE at about 450ºC on a GaAs buffer layer. The interfaces of these structures showed misfit dislocations at islands of InAs besides the presence of lattice strain. Both types of samples showed microwave absorption signals typical for superconductivity. The most likely superconductive phases are small metastable inclusions, probably consisting of amorphous Ga or In.

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Section: Introductionsupporting

confidence: 85%

Section: Resultsmentioning

confidence: 99%

Defects In GaAs Bulk Crystals and Multi-Layers Caused by In Diffusion

et al. 1993

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“…The discovery of superconductivity connected with indium clusters in GaAs has been reported recently [1,2]. This finding has been independently confirmed in In diffused GaAs [3].…”

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confidence: 75%

Superconductivity in Indium Diffused GaAs

et al. 1992

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“…[29,30]. When γ/π is rational a set of degeneracies between energy levels occurs which can be studied by means of the quantum algebra U q [SU (2)] at a root of unity [31,32]. However, for our purposes here of comparing the XXZ chain with the superintegrable chiral Potts model we will not use this general formalism and will content ourselves with the examination of a six site chain.…”

Section: B)mentioning

confidence: 99%

Spectrum and completeness of the three-state superintegrable chiral Potts model

Dasmahapatra¹,

Kedem²,

McCoy³

1993

Nuclear Physics B

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We find the rules which count the energy levels of the 3 state superintegrable chiral Potts model and demonstrate that these rules are complete. We then derive the complete spectrum of excitations in the thermodynamic limit in the massive phase and demonstrate the existence of excitations which do not have a quasi-particle form. The physics of these excitations is compared with the BCS superconductivity spectrum and the counting rules are compared with the closely related S = 1 XXZ spin chain.

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Baranowskiet al. reply

Cited by 7 publications

References 4 publications

Defects In GaAs Bulk Crystals and Multi-Layers Caused by In Diffusion

Defects In GaAs Bulk Crystals and Multi-Layers Caused by In Diffusion

Superconductivity in Indium Diffused GaAs

Spectrum and completeness of the three-state superintegrable chiral Potts model

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