Barium titanate write-once read-many times resistive memory with an ultra-high on/off current ratio of 108

Hsu, Chih-Chieh; Wu, Wen-Chin; Jhang, Wun-Ciang; Xiao, Zheng-Kai; Chang, Hung-Chun; Hsu, Min-Yi; Nanda, Umakanta

doi:10.1016/j.jallcom.2024.174252

Journal of Alloys and Compounds

2024

DOI: 10.1016/j.jallcom.2024.174252

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Barium titanate write-once read-many times resistive memory with an ultra-high on/off current ratio of 108

Chih-Chieh Hsu,

Wen-Chin Wu,

Wun-Ciang Jhang

et al.

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Cited by 3 publications

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A carbon electrode approach for TiO2-write-once-read-many resistive memories

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Materials Science in Semiconductor Processing

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Barium titanate write-once read-many times resistive memory with an ultra-high on/off current ratio of 108

Cited by 3 publications

References 69 publications

A carbon electrode approach for TiO2-write-once-read-many resistive memories

A carbon electrode approach for TiO2-write-once-read-many resistive memories

Fabrication of bilayer ITO/YZO/PMMA/Al memory devices with insight ternary switching mechanism

Doping stimulated ferromagnetic ordering and tailoring of the dielectric properties of Ba_1−xCe_xTiO₃

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Barium titanate write-once read-many times resistive memory with an ultra-high on/off current ratio of 108

Cited by 3 publications

References 69 publications

A carbon electrode approach for TiO2-write-once-read-many resistive memories

A carbon electrode approach for TiO2-write-once-read-many resistive memories

Fabrication of bilayer ITO/YZO/PMMA/Al memory devices with insight ternary switching mechanism

Doping stimulated ferromagnetic ordering and tailoring of the dielectric properties of Ba1−xCexTiO3

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Product

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Doping stimulated ferromagnetic ordering and tailoring of the dielectric properties of Ba_1−xCe_xTiO₃