Barrier Height Calculation of Ag/n-ZnO/p-Si/Al Heterojunction Diode

Kumar, Rajender; Jyotsna, .; Kumar, Amit

doi:10.33980/ajabs.2020.v08i01.006

Cited by 3 publications

(4 citation statements)

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“…In addition, activation energies calculated from conductivity values at RT are given in table 3. The estimated values agree well with those reported in the literature [58][59][60][61]. It was observed that the E a values decreased with increasing frequency.…”

Section: Resultssupporting

confidence: 90%

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Temperature-dependent dielectric properties of p-n heterojunction diodes based on hydrothermally synthesized ZnO nanostructures

Çağırtekin,

Ajjaq,

Barin

et al. 2023

Phys. Scr.

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In this study, the effect of coating p-Si substrates with a pure ZnO layer using the hydrothermal reaction method on the dielectric parameters was reported. The studied dielectric properties of the ZnO/p-Si structure include dielectric constant (ε′), dielectric loss (ε″), ac electrical conductivity (σ AC), and real and imaginary electrical modulus (M′, M″). These properties were investigated using experimental capacitance-frequency (C-f) and conductivity-frequency (G-f) measurements in a frequency range of 20 Hz-1 MHz and a temperature range of 300-420 K. Experimental results show that dielectric parameters are strongly frequency- and temperature-dependent. The dielectric constant showed an increase of about 11 times in the investigated temperature range. At the same time, AC electrical conductivity increased with increasing frequency and temperature. In addition, the electrical modulus was examined, and peaks were observed in M″ values. It was observed that the peaks shifted to the high-frequency region with the increase in temperature. The activation energies were also calculated from the conductivity parameters and a decrease was observed in the activation energies as the frequency increased. Regardless of temperature and frequency, the higher dielectric loss of the fabricated diode compared to its dielectric constant can be advantageous for certain heating or electromagnetic absorption applications.

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Section: Resultssupporting

confidence: 90%

“…This is because, with increasing frequency, the jumping of charge carriers between localized states increases, as a result of which the activation energy decreases with increasing frequency. The low activation energies mean that electron-hopping conduction is the dominant conduction mechanism [57][58][59][60][61][62].…”

Section: Resultsmentioning

confidence: 99%

Temperature-dependent dielectric properties of p-n heterojunction diodes based on hydrothermally synthesized ZnO nanostructures

Çağırtekin,

Ajjaq,

Barin

et al. 2023

Phys. Scr.

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“…This is because they can significantly improve the conductivity, luminosity, and magnetic properties, with the long lifetime of excited state and multiple valence electrons. Reports are also available on co-doping using different metals including Ag [ 13 ], Ga [ 14 ], Al [ 15 ], and Si [ 16 ], with benefits for enhancing the electrical conductivity and widening the transmittance spectrum of DMS materials. However, a controlled manner of utilizing the aforementioned dopants should be established, because they could cause more carriers to scatter inside the lattice, which would lower the device performance.…”

Section: Introductionmentioning

confidence: 99%

Effect of Al Concentration on Structural, Optical and Electrical Properties of (Gd, Al) Co-Doped ZnO and Its n-ZnO/p-Si (1 0 0) Heterojunction Structures Prepared via Co-Sputtering Method

et al. 2023

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Heterojunction structures of n-ZnO/p-Si were prepared through the growth of undoped ZnO and (Gd, Al) co-doped ZnO films onto p-type Si (1 0 0) substrates, using a co-sputtering method. The structural and optical properties of the Gd-doped ZnO films were studied as a function of different Al doping concentrations. The X-ray diffraction profiles indicated that the films had a nanocrystalline structure of ZnO with a (0 0 2) preferential orientation. An increase in the Al doping concentration deteriorated the (0 0 2) diffraction peak intensity. The transmittance measurements in the UV–Vis wavelength range indicated that the film’s optical gap increased with increase in Al doping concentration. The heterojunction parameters were evaluated using the current–voltage (I-V) characterization carried out of the fabricated n-ZnO/p-Si heterostructure, in dark conditions at room temperature. From these measurements, the n-ZnO-based DMS/p-Si heterojunction diode with the use of (Gd, Al) co-doped ZnO film showed the lowest leakage current of 1.28 × 10−8 A and an ideality factor n of 1.11, close to the ideal diode behavior of η = 1, compared to the n-Gd-doped ZnO/p-Si and n-undoped ZnO/p-Si heterojunction diodes.

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“…The barrier height increases with increasing temperature as the thermally energized carriers cross higher barrier heights and carriers at low temperatures face lower barrier heights. The presence of inhomogeneities in barrier heights is better explained by the Gaussian distribution of barrier height patches in the whole device area suggested by Werner and Güttler through application of the potential fluctuation model. − According to this model, the mean barrier height and apparent ideality factor follow the relationship φ ap = φ̅ B − q σ 2 2 k normalB T 1 η ap − 1 = prefix− ρ 2 + q ρ 3 2 k normalB T Here σ is defined as the standard deviation of the barrier height, which is the measure of the extent of inhomogeneity. φ̅ B is the mean effective barrier between the interface.…”

Section: Results and Discussionmentioning

confidence: 99%

Investigating the Electrical Transport and Photoresponse Properties of WSe₂ and a Thermally Engineered SrTiO₃-Based Heterojunction

Arora,

Chander,

Tomar

et al. 2024

ACS Appl. Electron. Mater.

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The engineering of functional interfaces plays an essential role in improving the electronic, spintronic, memory, and optoelectronic performances of semiconductor devices. In the present work, such an engineered interface is fabricated using the reduced SrTiO3 (r-STO) in combination with a sputter-deposited WSe2 thin film having Cu electrodes. The current–voltage characteristics of the heterojunctions exhibit a very strong temperature dependence. Interestingly, the I–V characteristics of the device show a remarkably high rectification ratio on the order of ∼105 at low temperatures. A comprehensive investigation of the electrical transport properties was carried out. The analysis revealed that the trap centers present in r-STO along with the grain-induced defect states in the WSe2 thin film lead to the space-charge-limited-conduction-supported mechanism, which explains the higher voltage dependence of the current in the device. The vacant states produced in the bulk are further probed with the help of frequency- and temperature-dependent capacitance–voltage (C–V) characteristics of the device. The C–V characteristics confirm the electronically active interface states and trap centers present in the WSe2/r-STO heterojunction. Along with that, the photoresponse properties of the device show a maximum responsivity of 64.5 A W–1 when illuminated with a wavelength of 1100 nm, with an incident power of 6.47 μW at 10 K.

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Barrier Height Calculation of Ag/n-ZnO/p-Si/Al Heterojunction Diode

Cited by 3 publications

References 0 publications

Temperature-dependent dielectric properties of p-n heterojunction diodes based on hydrothermally synthesized ZnO nanostructures

Temperature-dependent dielectric properties of p-n heterojunction diodes based on hydrothermally synthesized ZnO nanostructures

Effect of Al Concentration on Structural, Optical and Electrical Properties of (Gd, Al) Co-Doped ZnO and Its n-ZnO/p-Si (1 0 0) Heterojunction Structures Prepared via Co-Sputtering Method

Investigating the Electrical Transport and Photoresponse Properties of WSe₂ and a Thermally Engineered SrTiO₃-Based Heterojunction

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Barrier Height Calculation of Ag/n-ZnO/p-Si/Al Heterojunction Diode

Cited by 3 publications

References 0 publications

Temperature-dependent dielectric properties of p-n heterojunction diodes based on hydrothermally synthesized ZnO nanostructures

Temperature-dependent dielectric properties of p-n heterojunction diodes based on hydrothermally synthesized ZnO nanostructures

Effect of Al Concentration on Structural, Optical and Electrical Properties of (Gd, Al) Co-Doped ZnO and Its n-ZnO/p-Si (1 0 0) Heterojunction Structures Prepared via Co-Sputtering Method

Investigating the Electrical Transport and Photoresponse Properties of WSe2 and a Thermally Engineered SrTiO3-Based Heterojunction

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Investigating the Electrical Transport and Photoresponse Properties of WSe₂ and a Thermally Engineered SrTiO₃-Based Heterojunction