Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride

Temperature-dependent transport properties of CVD-fabricated n-GaN nanorods/p-Si heterojunction devices

“…Verication of s s0 and 4 B0 values can be carried out using a modied Richardson plot. The Richardson plot can be modied by combining eqn (2), (14) and (15) such that: Fig. 3a and lower than that of 4 B0 ¼ 1.475 eV from Fig.…”

“…12 These defects in heterostructures arise from several factors such as atomic inhomogeneities at the interfaces, surface preparation, impurity concentration, and dislocations that lead to deterioration of electrical transmission across the device. [13][14][15] The interface consists of high and low barrier areas, mainly as a result of the formation of different defects between semiconductors at the interface. [15][16][17] Therefore, it is of great importance to understand the nature of electrical transport through GaN/Si heterojunctions.…”

“…[13][14][15] The interface consists of high and low barrier areas, mainly as a result of the formation of different defects between semiconductors at the interface. [15][16][17] Therefore, it is of great importance to understand the nature of electrical transport through GaN/Si heterojunctions. In order to improve the performance of devices, it is neccessary to study the electrical characteristics of GaN/Si Schottky interfaces at different temperatures.…”

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

“…Roccaforte et al [5] analyzed the barrier inhomogeneity and non-ideal electrical characteristics of the vertical SBDs on the free-standing GaN. Various current transport mechanisms controlling the forward and reverse I-V properties of the GaN SBDs were reported [6][7][8][9][10].…”

60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes

“…It ensures a reasonably constant SBH, with values upwards of 1.73 V, for wide temperature ranges [ 25 ]. However, because of the detrimental effect of Schottky contact inhomogeneity [ 25 , 32 , 33 , 34 , 35 , 36 , 37 , 38 ], these indicators of merit degrade significantly for large temperature variations. As such, there are no reports of SiC-Schottky diodes working predictably over vast temperature ranges, much less so sensors.…”