Barrier performance of ITO film on textured Si substrate

Hsieh, S.H.; Chen, W.J.; Ohdaira, Keisuke

doi:10.1007/s10854-020-03941-3

Cited by 4 publications

(3 citation statements)

References 13 publications

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“…An additional advantage of applying copper plating for SHJ solar cells is the presence of the topmost transparent conductive oxide (TCO) layer which is proved to be an effective barrier to copper migration into the silicon bulk, i.e., no plated nickel barrier is required. [12][13][14] However, for plating a copper grid, the TCO layer has to be masked to avoid copper deposition on the full wafer area. There, a wide variety of plating approaches adapted to bifacial SHJ solar cells were investigated in the last decade as reviewed in the literature.…”

Section: Introductionmentioning

confidence: 99%

Atomic Force Microscopy Analysis of Aluminum Layer Properties and Correlation to Masking Functionality in Copper Plating Metallization for Solar Cells

et al. 2023

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The native AlOx grown on a thin sputtered aluminum layer can be used as mask for electroplating copper, e.g., for metallizing silicon heterojunction (SHJ) solar cells. Effects that influence the masking quality for selective electroplating are studied herein. Atomic force microscopy characterization in PeakForce mode highlights the presence of some insulation defects in the native AlOx due to local contamination, pinholes, or tunneling currents. A focused ion beam/scanning electron microscopy analysis is further conducted to understand some defects in detail. The AlOx insulation can be improved by adsorbing a self‐assembled monolayer, which is mainly required along the process sequence to adjust the surface wetting of the Al for optimal NaOHaq printing. The mask quality and complete metallization sequence for solar cells are demonstrated on industrial SHJ precursors. Inkjet‐ and FlexTrail‐printing of NaOHaq are shown to be suitable to pattern the Al layer. Promising conversion efficiency comparable to screen‐printing reference is reached on large area.

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Section: Introductionmentioning

confidence: 99%

Atomic Force Microscopy Analysis of Aluminum Layer Properties and Correlation to Masking Functionality in Copper Plating Metallization for Solar Cells

et al. 2023

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“…SHJ solar cells are based on thermally sensitive hydrogenated amorphous silicon (a-Si:H) layers, which are covered by a transparent conductive oxide (TCO) and therefore require low-temperature processing ≤200 °C . The TCO layer acts as lateral charge transport to the metallic grid, antireflective coating (ARC), and may also serve as a diffusion barrier against metal diffusion into the silicon (shown specifically for indium tin oxide (ITO)). − Copper plating at intrinsically low temperatures is therefore a suitable metallization route; , however, the grid to be deposited by plating must first be patterned using a mask to avoid deposition on the full TCO area. Plated metallization is commonly performed by applying an organic resist − or dielectric layers ,,− as a plating mask.…”

Section: Introductionmentioning

confidence: 99%

Hydrophobic AlO_x Surfaces by Adsorption of a SAM on Large Areas for Application in Solar Cell Metallization Patterning

Hatt

Bartsch

Davis

et al. 2021

ACS Appl. Mater. Interfaces

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A resist-free metallization of copper-plated contacts is attractive to replace screen-printed silver contacts and is demonstrated on large-area silicon heterojunction (SHJ) solar cells. In our approach, a selfpassivated Al layer is used as a mask during the plating process. In this study, Al/AlO x or Al 2 O 3 plating masks are further functionalized by a selfassembled monolayer (SAM) of octadecyl phosphonic acid (ODPA). The ODPA adsorption is characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy in attenuated total reflectance (FTIR-ATR) (in situ), and contact angle measurements to link the surface chemical composition to wetting properties. The SAM leads to homogeneous hydrophobic surfaces on large-area textured solar cells and planar flexible printed circuit boards (PCBs), which allows reproducible patterning of narrow lines by inkjet printing of an etchant. Selective copper plating is then performed to complete the metallization process and produce Cu contacts in the patterned areas. Silicon heterojunction (SHJ) solar cells metallized by the complete sequence reached up to 22.4% efficiency on a large area.

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“…In recent years, microelectronics technology has become an important research direction in basic science and industrial research due to the developmental requirements in microelectronics and nano‐optics. [ 1–3 ] Transparent and conductive films are mainly used in various displays for their transparency and conductivity. [ 4–7 ] Indium tin oxide (ITO) film (Sn‐doped In 2 O 3 , referred to as ITO) has a higher electron concentration (10 21 cm –1 ), higher electron mobility (15–45 cm 2 V –1 s –1 ), a wider prohibition, an n‐type semiconductor material with a bandwidth (3.65 eV), which has high infrared reflectance and high ultraviolet absorption, high electrical conductivity, high visible light transmittance, strong mechanical hardness, and good chemical stability.…”

Section: Introductionmentioning

confidence: 99%

Effect of Sputtering Power on the Optical and Electrical Properties of ITO Films on a Flexible Fluorphlogopite Substrate

Zhu

Zhang

et al. 2021

Crystal Research and Technology

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In this study, magnetron sputtering is implemented to adjust the sputtering power from 156 to 306 W at room temperature, and thin film samples of indium tin oxide (ITO) on a flexible fluorphlogopite substrate are taken. With the increase in power, the resistivity of the film first decreases and then increases. The resistivity is at least 1.51 × 10–3 Ω cm at 276 W, and the highest resistivity is 2.93 × 10–2 Ω cm at 156 W. The average light transmittance of the film (400–800 nm) decreases with the increase in power within the range of 156–276 W, The highest average transmittance is 92.6% at 156 W. The quality factor of the film first rises and then decreases as the power increases, it is as high as 4.47 × 10–3 Ω–1sq at 276 W. All the AFMs show that the roughness of the sample does not significantly change with power. The SEM picture shows that as the power increases from 156 to 276 W, the grain size increases slightly. All samples are bent 1200 times around a steel cylinder, and the sheet resistance does not change more than 5%.

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Barrier performance of ITO film on textured Si substrate

Cited by 4 publications

References 13 publications

Atomic Force Microscopy Analysis of Aluminum Layer Properties and Correlation to Masking Functionality in Copper Plating Metallization for Solar Cells

Atomic Force Microscopy Analysis of Aluminum Layer Properties and Correlation to Masking Functionality in Copper Plating Metallization for Solar Cells

Hydrophobic AlO_x Surfaces by Adsorption of a SAM on Large Areas for Application in Solar Cell Metallization Patterning

Effect of Sputtering Power on the Optical and Electrical Properties of ITO Films on a Flexible Fluorphlogopite Substrate

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Barrier performance of ITO film on textured Si substrate

Cited by 4 publications

References 13 publications

Atomic Force Microscopy Analysis of Aluminum Layer Properties and Correlation to Masking Functionality in Copper Plating Metallization for Solar Cells

Atomic Force Microscopy Analysis of Aluminum Layer Properties and Correlation to Masking Functionality in Copper Plating Metallization for Solar Cells

Hydrophobic AlOx Surfaces by Adsorption of a SAM on Large Areas for Application in Solar Cell Metallization Patterning

Effect of Sputtering Power on the Optical and Electrical Properties of ITO Films on a Flexible Fluorphlogopite Substrate

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Hydrophobic AlO_x Surfaces by Adsorption of a SAM on Large Areas for Application in Solar Cell Metallization Patterning