Barrier Properties for Oxygen Diffusion in a TaSiN Layer

Hara, Tohru; Tanaka, Masaru; Sakiyama, K.; Onishi, S.; Ishihara, Kengo; Kudo, Jun

doi:10.1143/jjap.36.l893

Cited by 40 publications

(16 citation statements)

References 31 publications

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“…It has also been reported that TaSi N is an excellent oxygen diffusion barrier up to 900 C [4]- [6]. We have reported that the work function of TaSi N films changes from 4.2-4.3 eV after 400 C anneal to eV after 900 C anneal due to the formation of a disilicide reaction layer at the interface of the electrode and the dielectric [7].…”

Section: Introductionmentioning

confidence: 66%

Effect of the composition on the electrical properties of TaSi/sub x/N_y metal gate electrodes

Suh

Heuss

Lee

et al. 2003

IEEE Electron Device Lett.

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In this letter , the effect of silicon and nitrogen on the electrical properties of TaSi N gate electrode were investigated. The TaSi N films were deposited on SiO 2 using reactive cosputtering of Ta and Si target in Ar and N 2 ambient. The thermal stability of TaSi N /SiO 2 /p-type Si stacks was evaluated by measuring the flatband voltage and equivalent oxide thickness at 400 C and 900 C in Ar. It was found that under high temperature anneals, Si-rich TaSi N films increased and this was attributed to the formation of a reaction layer at the electrode-dielectric interface. Reducing the Si content alone did not prevent the formation of this reaction layer while removing Si completely by utilizing TaN resulted in work functions that were too high. The presence of both Si and N was deemed necessary and their content was critical in obtaining optimized TaSi N gates that are suitable for NMOS devices.

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Section: Introductionmentioning

confidence: 66%

Effect of the composition on the electrical properties of TaSi/sub x/N_y metal gate electrodes

Suh

Heuss

Lee

et al. 2003

IEEE Electron Device Lett.

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“…It has been reported that the surface of a TaSiN layer is less oxidized with annealing in oxide ambient. 13 The removal rate of the barrier layer was determined by the thickness of oxide layer formed during the reaction.…”

Section: Resultsmentioning

confidence: 99%

Chemical Mechanical Planarization of Copper and Barrier Layers by Manganese(IV) Oxide Slurry

Hara

Kurosu

Doy

2001

Electrochem. Solid-State Lett.

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Deep dishing and erosion are serious problems in conventional chemical mechanical planarization ͑CMP͒ of copper/barrier layer, specifically when a hard barrier layer is used as the polishing stopper. This paper describes the reduction of the dishing in the CMP with lower removal rate ratio. This CMP can be achieved by following procedures. ͑i͒ Increase of removal rate in barrier layer; removal rate is 1.5 nm/min in polycrystalline tantalum nitride barrier layer. This rate increases to 77 nm/min in TaSiN barrier layer when polished by MnO 2 slurry with hard pad. ͑ii͒ Reduction of the removal rate of copper layer; removal rate of electroplated copper layer decreases to 210 nm/min by MnO 2 slurry. This rate decreases to 77 nm/min when additive is doped into this slurry by 10%. Because thin antioxide layer is formed at the copper surface during the polishing by this additive, removal rate ratio of Cu/barrier layer reduces to unity by this doping. Dishing free CMP can be developed by this process.

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“…4 -6 TaSi x N y films have been one of the most crucial barrier materials for Cu interconnection and a bottom electrode for dynamic random access memory capacitors. [7][8][9][10] They have shown excellent oxygen diffusion barrier properties and excellent thermal/chemical stability against high temperature processing [11][12][13] because TaSi x N y films have stable amorphous phase over a wide range of compositions. While significant effort has been spent studying the diffusion barrier properties of TaSi x N y films, almost no attention has been given to electrical properties of the TaSi x N y films for gate electrode applications.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of TaSixNy thin films as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices

Suh

Heuss

Misra

2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Reactively sputtered TaSixNy films have been investigated as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices. The as-deposited TaSixNy films were amorphous over a wide range of compositions. After annealing at 1000 °C, Ta30Si33N37 film became crystalline, however Ta26Si28N52 film remained amorphous. The x-ray photoelectron spectroscopy shows a significant increase of Si–N bonding in the TaSixNy films with increasing N content. The presence of Si–N bonds is attributed to cause the amorphous nature of the high N containing TaSixNy films. The work functions of TaSixNy films were extracted by capacitance–voltage analysis. The work function values for TaSixNy films with varying N contents range from 4.26 to 4.35 eV after forming gas annealing at 400 °C for 30 min, suggesting that TaSixNy films have work functions appropriate for n-type metal-oxide-semiconductor devices. However, it was observed, after 1000 °C anneals, that the work function of TaSixNy films increased to ∼4.8 eV. We believe that the mechanism that causes the work function to increase is the formation of a Ta-disilicide layer at the interface of the electrode and the dielectric. Current–voltage characteristics of the TaSixNy gates showed lower gate leakage compared to the TaSix gates, due to the retarding formation of an interface layer in the TaSixNy/SiO2/p-Si structures.

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Barrier Properties for Oxygen Diffusion in a TaSiN Layer

Cited by 40 publications

References 31 publications

Effect of the composition on the electrical properties of TaSi/sub x/N_y metal gate electrodes

Effect of the composition on the electrical properties of TaSi/sub x/N_y metal gate electrodes

Chemical Mechanical Planarization of Copper and Barrier Layers by Manganese(IV) Oxide Slurry

Characteristics of TaSixNy thin films as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices

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Barrier Properties for Oxygen Diffusion in a TaSiN Layer

Cited by 40 publications

References 31 publications

Effect of the composition on the electrical properties of TaSi/sub x/Ny metal gate electrodes

Effect of the composition on the electrical properties of TaSi/sub x/Ny metal gate electrodes

Chemical Mechanical Planarization of Copper and Barrier Layers by Manganese(IV) Oxide Slurry

Characteristics of TaSixNy thin films as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices

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Product

Resources

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Effect of the composition on the electrical properties of TaSi/sub x/N_y metal gate electrodes

Effect of the composition on the electrical properties of TaSi/sub x/N_y metal gate electrodes