Base-band impedance control and calibration for on-wafer linearity measurements

Pelk, M.; Vreede, L.C.N. de; Spirito, M.; Jos, J.H.

doi:10.1109/arftg.2004.1387852

Cited by 12 publications

(6 citation statements)

References 10 publications

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“…Fixing the fundamental frequency of the loops is required to optimize the system for wideband-modulated signals, as will be discussed in Section IV. The calibration procedure is a combination of the techniques described in [11]- [13] and utilizes the same standards (e.g., short, open, load, and thru) for both RF and BB calibration. This provides a very fast and easy procedure to fully calibrate the system at all frequency components of interest.…”

Section: Implementation Of the Active Harmonic Load-pull Setupmentioning

confidence: 99%

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Active Harmonic Load–Pull for On-Wafer Out-of-Band Device Linearity Optimization

Spirito

Pelk

Rijs³

et al. 2006

IEEE Trans. Microwave Theory Techn.

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In this paper, we present an active harmonic load-pull system especially developed for the on-wafer linearity characterization/optimization of active devices with wideband modulated signals using the out-of-band linearization technique. Our setup provides independent control of the impedances at the baseband, fundamental, and second-harmonic frequencies presented to the input and output of the device under test. Furthermore, to enable realistic test conditions with wideband-modulated signals, the electrical delays in the load-pull system are kept as small as possible by implementing a novel loop architecture with in-phase quadrature modulators. We have achieved a phase variation of the reflection coefficient of only 5 MHz for both the fundamental and second-harmonic frequencies.We demonstrate the high potential of the system for the on-wafer evaluation of new technology generations by applying out-of-band linearization to heterojunction bipolar transistor (HBT) and laterally diffused metal-oxide-semiconductor (LDMOS) devices. For the HBT, we outline a game plan to obtain the optimum efficiency-linearity tradeoff. Finally, a record-high efficiency-linearity tradeoff was achieved (without digital predistortion) for an inverse class-AB operated Philips Gen 6 LDMOS device, yielding 44% efficiency at an adjacent channel power level of 45 dBc at 2.14 GHz for an IS-95 signal.

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Section: Implementation Of the Active Harmonic Load-pull Setupmentioning

confidence: 99%

“…This facilitates the calibrated measurement of the complex source and load BB reflection coefficients offered to the DUT without the need of additional equipment. The corrected BB loading conditions are calculated, from the raw sensed data, using the calibration formulas in [13].…”

Section: B Independent Control Of Bb Fundamental and Second-harmonmentioning

confidence: 99%

Active Harmonic Load–Pull for On-Wafer Out-of-Band Device Linearity Optimization

Spirito

Pelk

Rijs³

et al. 2006

IEEE Trans. Microwave Theory Techn.

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“…Custom bias-tees with low inductance are placed directly at the wafer probe in order to minimize the electrical delay of the BB impedance, implemented here as a passive impedance switch bank [16]. On the BB board also the low-frequency test-set for the calibrated BB impedance measurement is implemented.…”

Section: Hardware Descriptionmentioning

confidence: 99%

“…The system calibration is relatively straightforward and is a combination of the techniques described in [15], [16], and [18]. A first calibration step uses a combination of standards at the source and DUT input reference planes, and allows the simultaneous measurement of the source and DUT input reflection coefficients [15].…”

Section: System Calibrationmentioning

confidence: 99%

“…A first calibration step uses a combination of standards at the source and DUT input reference planes, and allows the simultaneous measurement of the source and DUT input reflection coefficients [15]. At the same time a calibration for the measurement of the BB impedance is performed by use of a "short", "open" and "load" standard at the DUT input and output reference planes [16]. A second calibration step employs a "short", "open" and "load" standard at the load reference plane, when a "thru" is used as a DUT, and it allows the measurement of the DUT load reflection coefficient.…”

Section: System Calibrationmentioning

confidence: 99%

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Active Harmonic Load–Pull With Realistic Wideband Communications Signals

Marchetti

Pelk

Buisman

et al. 2008

IEEE Trans. Microwave Theory Techn.

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A new wideband open-loop active harmonic load-pull measurement approach is presented. The proposed method is based on wideband data-acquisition and wideband signal-injection of the incident and device generated power waves at the frequencies of interest. The system provides full, user defined, in-band control of the source and load reflection coefficients presented to the device-under-test at baseband, fundamental and harmonic frequencies. The system capability to completely eliminate electrical delay allows to mimic realistic matching networks using their measured or simulated frequency response. This feature enables active devices to be evaluated for their actual in-circuit behavior, even on wafer. Moreover the proposed setup provides the unique feature of handling realistic wideband communication signals like multicarrier wideband code division multiple access (W-CDMA), making the setup perfectly suited for studying device performance in terms of efficiency, linearity and memory effects.In this work we describe the hardware and signal conditioning of the proposed setup. The high dynamic range, bandwidth and measurement speed of the system, together with its capability to engineer the large-signal operation of an active device, are demonstrated by measuring the improved RF performance of a multicarrier W-CDMA driven laterally diffused metal-oxide-semiconductor device when the electrical delay in the setup is canceled.

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Advanced Configurations and Applications

Ghannouchi

Hashmi

2013

Load-Pull Techniques With Applications to Power Amplifier Design

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Base-band impedance control and calibration for on-wafer linearity measurements

Cited by 12 publications

References 10 publications

Active Harmonic Load–Pull for On-Wafer Out-of-Band Device Linearity Optimization

Active Harmonic Load–Pull for On-Wafer Out-of-Band Device Linearity Optimization

Active Harmonic Load–Pull With Realistic Wideband Communications Signals

Advanced Configurations and Applications

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