Base-collector leakage currents in InP/InGaAs double heterojunction bipolar transistors

On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)

“…The I CO is essentially related to the intrinsic leakage of the B-C layer rather than the extrinsic leakage induced by the process fabricated. From experiment results, the I CO values of device A1 are less than those observed in device A2, InP/ InGaAs HBTs with an InAlGaAs [13] or an InGaAs collector [14], by one or two order in magnitude at room temperature. In our both devices, the dominance of electron multiplication behavior and the temperature effect depend significantly on the collector design [9].…”

Improved InGaAs/InP double-heterojunction bipolar transistors using a thin-emitter structure design

“…Figure 2 shows the specific contact resistance variation as a function of annealing temperature for both TirPtrAu and PtrTirPtrAu metalizations. For the TirPtrAu contact system, acceptable 17 , we found that the metal layer structure and contact annealing temperature drastically influence the device base᎐collector leakage current. To restrict the effects of the various parame-Ž ters of the fabrication process, large-area devices which .…”

An InP/InGaAs/InP DHBT with high power density at Ka-band

“…However, the base-collector junction of InP/ InGaAs DHBTs depends on the material grading to eliminate conduction band discontinuity; reduce current blocking, and allow operation at high collector current density. In related investigations, base-collector conduction band discontinuities were prevented using structures such as linearly graded InGaAs/InAlAs chirped superlattices (CSLs) with pulse doping [8], a step-graded InGaAs/InGaAsP/ InP collector and a linearly graded InGaAlAs junction [9,10]. Although base-collector junction conduction band discontinuity is thus eliminated, the breakdown voltage decreased as the band of the grading material became narrower [8][9][10]12].…”

“…In related investigations, base-collector conduction band discontinuities were prevented using structures such as linearly graded InGaAs/InAlAs chirped superlattices (CSLs) with pulse doping [8], a step-graded InGaAs/InGaAsP/ InP collector and a linearly graded InGaAlAs junction [9,10]. Although base-collector junction conduction band discontinuity is thus eliminated, the breakdown voltage decreased as the band of the grading material became narrower [8][9][10]12]. In other investigations, the breakdown voltage of InP/InGaAs DHBTs decreased as collector thickness declined (<300 nm), as it does for InP/InGaAs SHBTs as the collector thickness declines [11].…”