Basic Study on Conductive Characteristics of SiC Power Device for Its Application to AC/DC Converter

Matsukawa, T.; Chikaraishi, H.; Sato, Yoshiaki; Shimada, Ryuichi

doi:10.1109/tasc.2004.830031

Cited by 12 publications

(3 citation statements)

References 5 publications

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“…The wider bandgap of the material results in a breakdown voltage 10 times higher than that of Si, 10 making it an ideal material for high voltage applications. In addition, the non -linear relationship between the drift region thickness and breakdown voltage allows for much thinner drift regions in wide bandgap devices, resulting in lower conduction voltage drop 11,12 and less time needed for reverse recovery due to a lower volume of excess charge carriers. SiC also has a high thermal conductivity as compared to other semiconductor materials, and can therefore operate at higher temperatures.…”

Section: Inductive Pulsed Plasma Thruster Circuit Topologymentioning

confidence: 99%

“…Further information on the SiC material properties and its subsequent incorporation into solid-state device designs can be found in Ref. 11. These characteristics make SiC devices highly promising for IPPT applications as we might expect a SiC diode to result in higher circuit recapture efficiency than what can be obtained using a conventional Si diode.…”

Section: Inductive Pulsed Plasma Thruster Circuit Topologymentioning

confidence: 99%

See 1 more Smart Citation

Testing of Diode-Clamping in an Inductive Pulsed Plasma Thruster Circuit

Toftul

Polzin²,

Martin³

et al. 2014

50th AIAA/ASME/SAE/ASEE Joint Propulsion Conference

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Testing of a 5.5 kV silicon (Si) diode and 5.8 kV prototype silicon carbide (SiC) diode in an inductive pulsed plasma thruster (IPPT) circuit was performed to obtain a comparison of the resulting circuit recapture efficiency, , defined as the percentage of the initial charge energy remaining on the capacitor bank after the diode interrupts the current. The diode was placed in a pulsed circuit in series with a silicon controlled rectifier (SCR) switch, and the voltages across different components and current waveforms were collected over a range of capacitor charge voltages. Reverse recovery parameters, including turn-off time and peak reverse recovery current, were measured and capacitor voltage waveforms were used to determine the recapture efficiency for each case. The Si fast recovery diode in the circuit was shown to yield a recapture efficiency of up to 20% for the conditions tested, while the SiC diode further increased recapture efficiency to nearly 30% . The data presented show that fast recovery diodes operate on a timescale that permits them to clamp the discharge quickly after the first half cycle, supporting the idea that diode-clamping in IPPT circuit reduces energy dissipation that occurs after the first half cycle. Nomenclature = capacitance = initial capacitor energy = final capacitor energy = loop current = peak reverse recovery current = mean forward current = reverse recovery charge = time of initial current zero crossing = reverse recovery time = capacitor voltage = initial capacitor voltage = final capacitor voltage = maximum reverse blocking voltage = electromagnetic decoupling distance = recapture efficiency 1 Flight Systems Engineer, Systems Integration Branch, Vehicle Integration Depatment, alexandra.toftul@nasa.gov, Member AIAA.

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Section: Inductive Pulsed Plasma Thruster Circuit Topologymentioning

confidence: 99%

Section: Inductive Pulsed Plasma Thruster Circuit Topologymentioning

confidence: 99%

Testing of Diode-Clamping in an Inductive Pulsed Plasma Thruster Circuit

Toftul

Polzin²,

Martin³

et al. 2014

50th AIAA/ASME/SAE/ASEE Joint Propulsion Conference

View full text Add to dashboard Cite

show abstract

“…Despite great progress in Si-based power device technology, new power semiconductors have been continuously explored to overcome the fundamental limitation of Si power devices. [1][2][3][4] For example, GaN-based heterostructures have received great attention for use in highefficiency power applications owing to their unique properties such as high breakdown field, high carrier concentration, and high mobility. [5][6][7] Excellent characteristics of AlGaN/ GaN heterostructure-based power devices and power ICs have been demonstrated by several research groups.…”

mentioning

confidence: 99%

Unidirectional AlGaN/GaN-on-Si HFETs with reverse blocking drain

Lee

Han

Park

et al. 2013

Appl. Phys. Express

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We have developed a novel unidirectional AlGaN/GaN-on-Si heterojunction field-effect transistor (HFET) with reverse blocking drain. A recessed Schottky contact was incorporated into a conventional ohmic drain electrode to prevent the undesired reverse current flow while reducing the turn-on voltage in forward current characteristics. The combination of recessed Schottky and ohmic electrodes significantly reduced the turn-on voltage in comparison with a conventional Schottky drain. A turn-on voltage of 0.4 V, an off-state forward breakdown voltage of 615 V, and a reverse blocking drain voltage of −685 V were achieved for the gate-to-drain distance of 12 µm.

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Silicon and Silicon Carbide Power Diodes

Kazimierczuk

2008

Pulse‐Width Modulated DC‐DC Power Converters

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Basic Study on Conductive Characteristics of SiC Power Device for Its Application to AC/DC Converter

Cited by 12 publications

References 5 publications

Testing of Diode-Clamping in an Inductive Pulsed Plasma Thruster Circuit

Testing of Diode-Clamping in an Inductive Pulsed Plasma Thruster Circuit

Unidirectional AlGaN/GaN-on-Si HFETs with reverse blocking drain

Silicon and Silicon Carbide Power Diodes

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