Basics of Field Ion Microscopy

Danoix, F.; Vurpillot, F.

doi:10.1016/b978-0-12-804647-0.00003-6

Atom Probe Tomography 2016

DOI: 10.1016/b978-0-12-804647-0.00003-6

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Basics of Field Ion Microscopy

F. Danoix¹,

F. Vurpillot²

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2021

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Surface Microscopy of Atomic and Molecular Hydrogen from Field-Evaporating Semiconductors

et al. 2021

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We report on the microscopic behavior of residual hydrogen on nanometric field emitters. By using homogeneous or heterostructured semiconductor specimens analyzed in a laser-assisted atom probe, it is possible to study how the relative abundances of the ionic species H+, H2 +, and H3 + depend on the microscopic electric field, estimated through post-ionization statistics. In the case of Ga-containing semiconductors, the relative abundances of H+, H2 +, and H3 + follow a common trend, independent of the nonmetallic component of the matrix. The dependence of the total H flux on the electric field exhibits a more complex behavior, which depends also on the spatial direction of the variation of the field (in-depth or on-surface). The analysis of multiple detection events provides further insights into surface chemistry. Noticeably, H+–H3 + ion pairs are both correlated in number and separated by very small distances on the detector space, suggesting a possible reaction 2H2 → H3 ++H++2e– taking place on the field emitter surface.

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Surface Microscopy of Atomic and Molecular Hydrogen from Field-Evaporating Semiconductors

et al. 2021

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Basics of Field Ion Microscopy

Cited by 1 publication

References 23 publications

Surface Microscopy of Atomic and Molecular Hydrogen from Field-Evaporating Semiconductors

Surface Microscopy of Atomic and Molecular Hydrogen from Field-Evaporating Semiconductors

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