Basics of luminescent diagnostics of the dislocation structure of SiC crystals

Abstract

The result of the studies of dislocation luminescence in SiC crystals are presented in the report. This semiconductor forms great number of polytypes which differs by periodical alternation of cubic and hexagonal layers in basic planes. High probability of periodic pack infringement caused by very little energy of stacking fault leads to variation of dislocation structures in different glide planes of this crystals. Shockly and Frank partial dislocations are sufficiently important.The dislocation luminescence as growth origin so as dislocations included in result of plastic deformation or high temperature annealing. In this case the spectra of dislocation luminescence are the indicators of processes of phase transitions. The influence of impurities on the dislocation luminescence centers is investigated. The models of structure of dislocation centers and the mechanism of radiative transitions are proposed.

3C-6H transformation in heated cubic silicon carbide 3C-SiC

“…Close-packed layers (111) shift and an increase in numbers and area of spreading of stacking faults are observed like α→β transformation [19]. The stacking faults spread in volume uniformly after annealing.…”

Nanostructures in lightly doped silicon carbide crystals with polytypic defects

“…Spectroscopy of defects in pure perfect crystal SiC has already been described in the works of Refs. [6,16,[20][21][22].…”

“…Great advances were reported in growing a single crystalline polytype by controlled sublimation and chemical vapor deposition [1][2][3]. Polytypic transformation in SiC was investigated by many authors [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19].…”

“…Photoluminescence (PL) is one of the most widely used experimental techniques for the physical characterization of semiconductors. The complex research of the low temperature photoluminescence (LTPL) spectra under different conditions of registration and at various temperatures is one among the most widely used experimental techniques for the physical characterization of the crystals [3,6,17]. The simultanious control of the phase state and structural imperfactions showed defect formation as a result of polytypes reorganization in the process of crystal growth.…”

Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects

“…Low-temperature photoluminescence (LTPL) spectroscopy was used as a highly sensitive and accurate method to the structure changes [1][2][3].…”