Batch ALD: Characteristics, comparison with single wafer ALD, and examples

Granneman, E. H. A.; Fischer, P.; Pierreux, Dieter; Terhorst, H.; Zagwijn, P.M.

doi:10.1016/j.surfcoat.2007.05.009

Cited by 120 publications

(103 citation statements)

References 2 publications

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“…17 However, they suffer from a limited thermal stability which can lead to a parasitic CVD component and might result into high impurity concentrations and poor film uniformity. 25 In addition, Kukli et al have demonstrated that the HfO 2 ALD process using TEMAH in combination with H 2 O as oxygen source leads to an increment in GPC from 0.9 Å /cycle at 250 C to 1.5 Å / cycle at 325 C, indicating the decomposition of the precursor at temperatures !300 C. 17 To overcome this, an ALD process using the cyclopentadienyl (Cp ¼ C 5 H 5 ) precursor type was investigated. A higher thermal stability was achieved and ALD saturation was realized at a relative high substrate temperature of 400 C. 22 However, a lower GPC of $0.5 Å /cycle was obtained when using Cp-precursors like (CpMe) 2 HfMe 2 and (CpMe) 2 Hf(OMe)Me as compared to the alkylamides ($0.9 Å /cycle).…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma

Sharma

Longo

Verheijen

et al. 2016

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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HfO2 thin films were prepared by plasma-enhanced atomic layer deposition using a cyclopentadienyl-alkylamido precursor [HfCp(NMe2)3, HyALD™] and an O2 plasma over a temperature range of 150–400 °C at a growth per cycle around 1.1 Å/cycle. The high purity of the films was demonstrated by x-ray photoelectron spectroscopy and elastic recoil detection analyses which revealed that by increasing the deposition temperature from 200 to 400 °C, the atomic concentrations of residual carbon and hydrogen reduced from 1.0 to <0.5 at. % and 3.4 to 0.8 at. %, respectively. Moreover, Rutherford backscattering spectroscopy studies showed an improvement in stoichiometry of HfO2 thin films with the increase in deposition temperature, resulting in Hf/O ratio close to ∼0.5 at 400 °C. Furthermore, grazing incidence x-ray diffraction measurements detected a transition from amorphous at the deposition temperature of 300 °C to fully polycrystalline films at 400 °C, consisting of a mixture of monoclinic, tetragonal, and cubic phases. Finally, the surface morphology and conformality of HfO2 thin films studied by atomic force microscopy and transmission electron microscopy are also reported.

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Section: Introductionmentioning

confidence: 99%

Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma

Sharma

Longo

Verheijen

et al. 2016

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…Unfortunately, these prerequisites are considered to be the weak points of ALD. One way to increase the throughput of an ALD system is to do batch processing, 5 but this is not always compatible with the in-line processes often used in the before mentioned applications. A significant reduction of the cost of ownership of ALD processes and equipment must be realized to make ALD economically viable for these new applications.…”

Section: Introductionmentioning

confidence: 99%

Spatial atomic layer deposition: A route towards further industrialization of atomic layer deposition

Poodt¹,

Cameron

Dickey³

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

320

261

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Atomic layer deposition (ALD) is a technique capable of producing ultrathin conformal films with atomic level control over thickness. A major drawback of ALD is its low deposition rate, making ALD less attractive for applications that require high throughput processing. An approach to overcome this drawback is spatial ALD, i.e., an ALD mode where the half-reactions are separated spatially instead of through the use of purge steps. This allows for high deposition rate and high throughput ALD without compromising the typical ALD assets. This paper gives a perspective of past and current developments in spatial ALD. The technology is discussed and the main players are identified. Furthermore, this overview highlights current as well as new applications for spatial ALD, with a focus on photovoltaics and flexible electronics.

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“…ALD film properties, surface reaction conditions, and pore geometries for the four studies to which our modeling results are compared. Values in parentheses () are estimated from known quantities; for example the pressure and exposure times corresponding to the Gordon et al study were computed to match the known exposure of 9000 L (Langmuir); likewise, the pore dimensions were fitted to the known AR ¼ 43. study film Gordon [2] HfO 2 Granneman [1] HfO 2 Rubloff [19] HfO 2 George [20] …”

Section: Comparison To Previous Knudsen Transport Resultsmentioning

confidence: 99%

“…The importance of ALD time-scale analysis from an industrial perspective is presented in Granneman et al [1] where several configurations of single-wafer reactors and multi-wafer batch reactor systems are analyzed. In the cited study, the authors break down the time-scale analysis to ALD precursor chemisorption on flat substrates and within high-aspect-ratio cylindrical pores; these processes are then combined with overall precursor material balances corresponding to the macroscopic-scale transport through each reactor system.…”

Section: Previous Workmentioning

confidence: 99%

A Ballistic Transport and Surface Reaction Model for Simulating Atomic Layer Deposition Processes in High‐Aspect‐Ratio Nanopores

Adomaitis

2011

Chemical Vapor Deposition

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In this paper we develop a model describing the ballistic transport of chemical precursor species for an atomic layer deposition (ALD) process. In the application we consider, pore geometry or surface properties of nanoporous materials are modified using ALD, taking advantage of its potential for conformal deposition in high-aspect-ratio structures. Because of the very large Knudsen number corresponding to these processes, the transport of gas-phase species inside the nanostructures takes place in a purely ballistic manner. Precursor transmission probability functions describing the fluxes between the pore surface features are developed and compared to previously published results. The transport model elements are then coupled to ALD surfacereaction models, spatially discretized, and integrated over each precursor exposure period to determine the pore spatial surface reaction extent profile. Predictions from our dynamic model are then compared to four previously published studies of ALD in nanopores to validate our simulator, and to gain further insight into the physical mechanisms at work in ALD processes. The utility of physically based models of the type we develop can be exploited to determine optimal precursor exposure levels for ALD-based nanomanufacturing operations.

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Batch ALD: Characteristics, comparison with single wafer ALD, and examples

Cited by 120 publications

References 2 publications

Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma

Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma

Spatial atomic layer deposition: A route towards further industrialization of atomic layer deposition

A Ballistic Transport and Surface Reaction Model for Simulating Atomic Layer Deposition Processes in High‐Aspect‐Ratio Nanopores

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