Batch synthesis of transfer-free graphene with wafer-scale uniformity

Jiang, Bei; Zhao, Qiang; Zhang, Zhepeng; Liu, Bingzhi; Shan, Jingyuan; Zhao, Liang; Rümmeli, Mark H.; Gao, Xuan; Zhang, Yanfeng; Yu, Tongjun; Sun, Jingyu; Liu, Zhongfan

doi:10.1007/s12274-020-2771-3

Cited by 35 publications

(43 citation statements)

References 34 publications

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“…[ 7,8,28–31 ] Based upon these analyses, the device requirements of wafer‐scale graphene films in fact deal with the quality of graphene and the compatibility with modern semiconductor technology ( Table 1 ). [ 15,44,47,50,69,80–94 ]…”

Section: Challenges Of Synthesizing Wafer‐scale Graphene Filmsmentioning

confidence: 99%

“…Afterward, the thermal field will be modified by heat convection, and the two fields gradually reach a steady state. [ 15 ] Simplified computational fluid dynamics (CFD) studies may exclude chemical reactions and include ideal gas assumption. The status of system such as pressure, density, and flow velocity can be given by the CFD simulations, which are realized by the finite volume method (FVM) or finite element method (FEM).…”

Section: Present Status Of Synthesizing Wafer‐scale Graphene Filmsmentioning

confidence: 99%

“…Figure summarizes the state‐of‐the‐art of wafer‐scale graphene‐based devices, encompassing field‐effect devices, optical modulators, sensors, and integrated circuits. [ 7,15–26 ] Equally importantly, wafer‐scale graphene film is able to serve as a key buffer layer to support the remote epitaxy growth of functional materials such as III–V compound semiconductors targeting optoelectronics including LED applications. [ 6,27 ] Wafer‐scale 3D graphene nanowalls and foams can be used in individual molecule biosensing and tissue engineering.…”

Section: Introductionmentioning

confidence: 99%

“…[ 12 ] Consequently, CVD route is preferable to achieve batch synthesis of high‐quality wafer‐scale graphene films. [ 15 ] Notwithstanding the recent advances in the CVD preparation of wafer‐scale graphene, the development in this realm is still at a nascent stage. [ 14 ] Moreover, although excellent reviews cover the fruitful progress in this field, to the best of our knowledge, few review articles systematically summarize the application requirements and corresponding synthetic strategies of wafer‐scale graphene films, not to mention the proposal in specific preparation targets and quality standards.…”

Section: Introductionmentioning

confidence: 99%

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Controllable Synthesis of Wafer‐Scale Graphene Films: Challenges, Status, and Perspectives

Jiang

Wang

Sun

et al. 2021

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However, the high cost of SiC wafers brings an insurmountable barrier toward the batch production. Mature transfer techniques are also under development for the application in microelectronics. Additionally, the number of layers seems not well controlled, resulting in an unsatisfied nonuniformity over the entire 2-in. wafer. [35] Raman mapping for the 2D peak indicates the variation of layer thickness and strain (Figure 2b). [35] Upon correcting the peak shift caused by the strain, the map in Figure 2c ultimately shows that the graphene epitaxially grown on SiC is dominantly 1-2 layers. [35] Meanwhile, reduced graphene oxide (rGO) could also fulfill wafer-scale films affording high uniformity. [33,[36][37][38] Recently, Juvaid et al. reported the synthesis rGO films on target substrates by pulsed laser deposition (PLD), as depicted in Figure 2d. [33] A 4-in. wafer can be attained (Figure 2e), which is featured by smooth surface, high transparency, and excellent uniformity (evaluated by Raman spectroscopy in Figure 2f). [33] Despite these advances, the process of chemical oxidation introduces a large number of defects in the crystalline structure of rGO, resulting in marked decline in the electrical and thermal properties. [12] CVD is found to be the most widely used technique in semiconductor industry to synthesize thin films, which, in particular, is able to produce large-area graphene films on metallic or insulating substrates in controllable fashions. [39][40][41][42][43] In a typical CVD process for graphene synthesis, carbon gaseous precursor flows through the hightemperature reaction zone and generates active reaction species for subsequent nucleation and growth of graphene Figure 1. Various types of devices based on wafer-scale graphene films. The central panel: photos of wafer-scale graphene devices.Reproduced with permission. [16] Copyright 2010, Science. Reproduced with permission. [15] Copyright 2020, Springer Nature. Reproduced with permission. [17] Copyright 2019, Wiley-VCH. Reproduced with permission. [18] Copyright 2019, Wiley-VCH. a) Schematic illustration of the transfer process of CVD graphene onto a single CMOS die containing a read-out circuit of the image sensor. Reproduced with permission. [19] Copyright 2017, Springer Nature. b) 3D schematic illustration of a graphene-based waveguide-integrated electro-absorption modulator. Reproduced with permission. [20] Copyright 2011, Springer Nature. c) Schematic of a dual-gate bilayer graphene transistor device. Reproduced with permission. [21] Copyright 2010, American Chemical Society. d) Tilted view scanning electron microscopy image of a graphene receiver integrated circuit, showing the integration architecture of key components including graphene field effect transistor (GFET). Reproduced with permission. [22] Copyright 2014, Springer Nature. e) Schematic of device architectures proposed in resistive random access memory technology based on graphene and related materials. Reproduced with permission. [23] Copyright 2017, Wiley-VCH. f ) Schematic re...

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Section: Challenges Of Synthesizing Wafer‐scale Graphene Filmsmentioning

confidence: 99%

Section: Present Status Of Synthesizing Wafer‐scale Graphene Filmsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Controllable Synthesis of Wafer‐Scale Graphene Films: Challenges, Status, and Perspectives

Jiang

Wang

Sun

et al. 2021

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“…Influence of gas-phase reactions on graphene layer63,89,91 . (a) Schematic diagram of the concentration distribution of the active carbon species when seven different positions independently (top) and seven separated Cu foils simultaneously (bottom) were placed along the tube; (b-c) UV-vis spectra of the graphene films grown on seven different positions independently (b) and seven separated Cu foils simultaneously (c).…”

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confidence: 99%

Effect of Gas-Phase Reaction on the CVD Growth of Graphene

Chen¹,

Zhang²,

Liu³

et al. 2021

Acta Physico Chimica Sinica

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Chemical vapor deposition (CVD) is considered as the most promising method for the mass production of high-quality graphene films owing to its fine controllability, uniformity, and scalability. In the past decade, significant efforts have been devoted to exploring new strategies for growing graphene with improved quality. During the high-temperature CVD growth process of graphene, besides the surface reactions, gas-phase reactions play an important role in the growth of graphene, especially for the decomposition of hydrocarbons. However, the effect of gas-phase reactions on the CVD growth of graphene has not been analyzed previously. To fill this gap, it is essential to systematically analyze the relationship between gas-phase reactions and the growth of graphene films. In this review article, we aim to provide comprehensive knowledge of the gas-phase reactions occurring in the CVD system during graphene growth and to summarize the typical strategies for improving the quality of graphene by modulating gas-phase reactions. After briefly introducing the elementary steps and basic concept of graphene growth, we focus on the gas-phase dynamics and reactions in the CVD system, which influence the decomposition of hydrocarbons, nucleation of graphene, and lateral growth of graphene nuclei, as well as the merging of adjacent graphene domains. Then, a systematic description of the mass transport process in gas phase is provided, including confirmation of the states of gas flow under different CVD conditions and introduction to the boundary layer, which is crucial for graphene growth. Furthermore, we discuss the possible reaction paths of carbon sources in the gas phase and the corresponding active carbon species existing in the boundary layer, based on which the main impact factors of gas-phase reactions are discussed. Representative strategies for obtaining graphene films with improved quality by modulating gas-phase reactions are summarized. Gas-phase reactions affect the crystallinity, cleanness, domain size, layer number, and growth rate of graphene grown on both metal and non-metal substrates. Therefore, we will separately review the detailed strategies, corresponding mechanisms, key parameters, and latest status regarding the quality improvement of graphene. Finally, a brief summary and proposals for future research are provided. This review can be divided into two parts: (1) gas-phase reactions occurring in the high-temperature CVD system, including the mass transport process and the reaction paths of hydrocarbons; and (2) the synthesis of high-quality graphene film via modulation of the gas-phase reaction, in order to improve the crystallinity, cleanness, domain size, layer number, and growth rate of graphene.

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Self‐Aided Batch Growth of 12‐Inch Transfer‐Free Graphene Under Free Molecular Flow

Liu

Sun

Cui

et al. 2022

Adv Funct Materials

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Direct synthesis of large‐area graphene on functional substrates via chemical vapor deposition has become a frontier research stream targeting practical applications. However, the batch production of transfer‐free graphene film with favorable quality and homogeneity remains a grand challenge. Herein, the direct growth of 12‐inch‐sized graphene is demonstrated over fused quartz in a batch manner. The key design of the synthetic route is the construction of a nano‐scale compartment to allow the formation of free molecular flow during growth, as well as to trap the hydroxyl species in situ released from the quartz substrates. Density functional theory calculations reveal that the hydroxyl species help decrease the energy barrier for feedstock decomposition and facilitate the carbon attachment to boost graphene growth. Thus‐prepared graphene possesses excellent optical transmittance (96% ± 1%) and electrical properties (1.22 ± 0.08 kΩ sq‒1). These findings unlock new opportunities for achieving batch production of graphene‐skinned functional materials with practical scalability and quality toward emerging uses.

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Batch synthesis of transfer-free graphene with wafer-scale uniformity

Cited by 35 publications

References 34 publications

Controllable Synthesis of Wafer‐Scale Graphene Films: Challenges, Status, and Perspectives

Controllable Synthesis of Wafer‐Scale Graphene Films: Challenges, Status, and Perspectives

Effect of Gas-Phase Reaction on the CVD Growth of Graphene

Self‐Aided Batch Growth of 12‐Inch Transfer‐Free Graphene Under Free Molecular Flow

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