BaTiO 3 thin films on platinized silicon: Growth, characterization and resistive memory behavior

Román, A.; Rengifo, M.; Medina, Leila M. Saleh; Reinoso, M.; Negri, R. Martı́n; Steren, L. B.; Rubi, D.

doi:10.1016/j.tsf.2017.03.038

Cited by 8 publications

(2 citation statements)

References 30 publications

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“…This triggers the search of new computer architectures and data processing paradigms. Among them, a great deal of attention is generated by neuromorphic computing Yu (2017); Mehonic and Kenyon (2022), which intends to develop hardware beyond the Von Neumann concept, able to mimic the extremely efficient and powerful capabilities of the mammals brain. To construct these machines, the development of solid state building blocks able to electrically replicate the behavior of neurons and synapses is needed.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial ferroelectric memristors integrated with silicon

Rengifo

Aguirre

Sirena

et al. 2022

Front. Nanotechnol.

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Neuromorphic computing requires the development of solid-state units able to electrically mimic the behavior of biological neurons and synapses. This can be achieved by developing memristive systems based on ferroelectric oxides. In this work we fabricate and characterize high quality epitaxial BaTiO3-based memristors integrated with silicon. After proving the ferroelectric character of BaTiO3 we tested the memristive response of LaNiO3/BaTiO3/Pt microstructures and found a complex behavior which includes the co-existence of volatile and non-volatile effects, arising from the modulation of the BaTiO3/Pt Schottky interface by the direction of the polarization coupled to oxygen vacancy electromigration to/from the interface. This produces remanent resistance loops with tunable ON/OFF ratio and asymmetric resistance relaxations. These properties might be harnessed for the development of neuromorphic hardware compatible with existing silicon-based technology.

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Section: Introductionmentioning

confidence: 99%

Epitaxial ferroelectric memristors integrated with silicon

Rengifo

Aguirre

Sirena

et al. 2022

Front. Nanotechnol.

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“…It was found that the morphology, crystallite grain size as well as porosity are important parameters that need be controlled for retention of good ferroelectric properties. Attempts to grow thin BTO films (thickness ⩾ 230 nm-400 nm) on Pt/Si using PLD by Nd: YAG laser show that the dielectric constants are strongly suppressed and the relative dielectric constant is often <30 [11]. The microscopic origin of this reduced capacitance, which is often discussed in terms of a lowpermittivity 'dead layer', is not well understood [12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Restoration of perovskite phase in the top layer of thin BTO film by plasma treatment and annealing

Sengupta

Ghatak

Sett

et al. 2018

J. Phys. D: Appl. Phys.

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We report a simple method to restore the perovskite phase in the top surface/subsurface region of a thin film (~100 nm) of barium titanate (BTO) fabricated by pulsed laser deposition on a platinized silicon surface and thus enhance its dielectric and ferroelectric properties. Phase evolution, surface morphology with local chemical composition of asgrown BTO films have been studied as a function of laser fluence. Investigations using xray diffraction, grazing angle incidence xray diffraction and depth resolved xray photoelectron spectroscopy show that even after achieving a good phase formation there can be a presence of nonperovskite TiO 2 phase at the surface and subsurface in such films that degrades its dielectric and ferroelectric response. The restoration of the degraded top layer was done by a combination of low energy Ar plasma treatment followed by an annealing process that enhances Ba content.

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