BaTiO3 Films by Low-Temperature Hydrothermal Techniques for Next Generation Packaging Applications

Raj, P. Markondeya; Wan, Lixi; Abothu, I.R.; Bhattacharya, Swapan Kumar; Dalmia, S.; Lance, Michael J.; Swaminathan, Madhavan; Sacks, Michael D.; Tummala, Rao

doi:10.1007/s10832-004-5082-2

Cited by 17 publications

(11 citation statements)

References 10 publications

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“…The pH of the solution was measured to be 13.5 at 95°C. The optimum Ba(OH) 2 concentration for hydrothermal BaTiO 3 synthesis was found to be 2 M from the authors' earlier studies [13]. The Ti-film on Si-wafer was placed facing down on Teflon frames in the solution in order to avoid precipitates from settling onto the surface and locally inhibiting formation of BaTiO 3 .…”

Section: Experimental Methodsmentioning

confidence: 99%

Leakage current analysis of hydrothermal BaTiO3 thin films

2011

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Hydrothermal processing can deposit crystalline ferroelectric films at low temperatures of less than 150°C to achieve permittivities above 100. Such a process, hence, can be attractive in integrating thin film capacitors in organic, silicon or flex substrates. However, their poor insulation strength leading to high leakage current can prevent their wide acceptance. Lattice defects such as hydroxyl groups are attributed to their high leakage currents and lower Breakdown Voltages (BDVs). With appropriate thermal treatments, majority of the OH groups can be removed, leading to improved insulation characteristics. The leakage current behavior of as-synthesized and post-baked hydrothermal thin films are analyzed with various conduction models. The room temperature I-V characteristics are attributed to a combination of ionic and Space-Charge-Limited (SCLC) conduction models for films baked at 160°C while higher baking temperatures of 350°C agree well with Poole-Frenkel type conduction, with an activation energy of 0.57 eV for the defects. The defects, which are presumably OH groups or oxygen vacancies embedded in the barium titanate lattice, act as shallow traps and the trapping and detrapping results in easier conduction. A brief perspective is provided on the suitability of such a hydrothermal thin film capacitor approach for power supply applications.

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Section: Experimental Methodsmentioning

confidence: 99%

Leakage current analysis of hydrothermal BaTiO3 thin films

2011

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“…2M Ba(OH) 2 was found to be the optimum concentration for hydrothermal BaTiO 3 synthesis from the authors' earlier studies. 20 The Ti film on Si wafer was placed on Teflon rings in the solution, facing down in order to avoid the precipitates from settling onto the surface, which may locally inhibit the formation of BaTiO 3 . The reaction was allowed to proceed for 24 h in an oven at 951C.…”

Section: Experimental Methodsmentioning

confidence: 99%

Hydrothermal Barium Titanate Thin‐Film Characteristics and their Suitability as Decoupling Capacitors

Raj

Lee

Kang

et al. 2010

Journal of the American Ceramic Society

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System integration and miniaturization with higher performance is driving thin‐film capacitor technologies toward higher capacitance densities with CMOS or organic package‐compatible processes for noise‐free power supply, power conversion, and efficient power management. The hydrothermal route can deposit crystalline ferroelectric films at low temperatures of <150°C. It is hence an attractive route for integrating high‐permittivity (K) thin‐film capacitors on both organic and silicon substrates. However, hydrothermal films are not commercialized so far because of their inferior insulation characteristics. Hydroxyl groups are attributed to high leakage currents, temperature‐dependent properties, and lower breakdown voltages. This paper discusses the dielectric characteristics such as capacitance density, leakage current, and temperature coefficient of capacitance of hydrothermal barium titanate films and correlates them with the water and OH groups in the film, morphology, stoichiometry, and crystallinity. With thermal treatment, majority of the OH groups can be removed leading to improved insulation characteristics. The room temperature I–V characteristics agreed with ionic conduction models for films baked at 160°C. A brief perspective is provided on the suitability of hydrothermal thin‐film capacitors for decoupling applications.

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“…Numerous passive integration platforms are investigated world wide, where passive functions such as capacitors, resistors or inductors are integrated using either laminate technologies or LTCC (low temperature cofired ceramic) technologies or thin film technologies on insulating substrates such as glass or ceramic [1,2,3,4,5]. Integration of passive functions with active functions into System in Package devices reduces component count and frees up board space for additional functionality in e.g.…”

Section: Integration Of Ferroelectric Mim Capacitors With Resistors Amentioning

confidence: 99%

FERROELECTRIC THIN FILM SYSTEM IN PACKAGE DEVICES WITH INTEGRATED CAPACITORS OF 100 nF/mm2 & BREAKDOWN VOLTAGES OF 90 V

et al. 2007

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BaTiO3 Films by Low-Temperature Hydrothermal Techniques for Next Generation Packaging Applications

Cited by 17 publications

References 10 publications

Leakage current analysis of hydrothermal BaTiO3 thin films

Leakage current analysis of hydrothermal BaTiO3 thin films

Hydrothermal Barium Titanate Thin‐Film Characteristics and their Suitability as Decoupling Capacitors

FERROELECTRIC THIN FILM SYSTEM IN PACKAGE DEVICES WITH INTEGRATED CAPACITORS OF 100 nF/mm2 & BREAKDOWN VOLTAGES OF 90 V

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