BAVI-cell: a novel high-speed 50 nm SONOS memory with band-to-band tunneling initiated avalanche injection mechanism

Sim, Jae Sung; Park, Il Han; Park, Han; Cho, Seongjae; Kim, Tae Hun; Song, Ki Whan; Kong, Juwon; Shin, Hyungcheol; Lee, Jong Duk; Park, Byung‐Gook

doi:10.1109/.2005.1469237

Cited by 3 publications

References 4 publications

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A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications

Junyu¹,

Wang²,

Jing³

et al. 2012

J. Semicond.

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We introduce a novel 2 T P-channel nano-crystal memory structure for low power and high speed embedded non-volatile memory (NVM) applications. By using the band-to-band tunneling-induced hot-electron (BTBTIHE) injection scheme, both high-speed and low power programming can be achieved at the same time. Due to the use of a select transistor, the "erased states" can be set to below 0 V, so that the periphery HV circuit (high-voltage generating and management) and read-out circuit can be simplified. Good memory cell performance has also been achieved, including a fast program/erase (P/E) speed (a 1.15 V memory window under 10 s program pulse), an excellent data retention (only 20% charge loss for 10 years). The data shows that the device has strong potential for future embedded NVM applications.

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A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications

Junyu¹,

Wang²,

Jing³

et al. 2012

J. Semicond.

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Potential well engineering by partial oxidation of TiN for high-speed and low-voltage Flash memory with good 125°C data retention and excellent endurance

Zhang

et al. 2009

2009 IEEE International Electron Devices Meeting (IEDM)

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Potential well engineering is proposed for NAND Flash memory. With a variable (~2nm-4.3nm) tunnel barrier, the engineered well (EW) enhances tunneling of carriers during program/erase (P/E) to result in fast P/E, while it suppresses charge loss under the retention mode to result in good data retention. The EW also improves endurance, as it is insensitive to the P/E stress induced tunnel barrier degradation. The EW demonstrated in this work is formed by partial oxidation of TiN at the interfaces of the SiO 2 /TiN/SiO 2 stack during rapid thermal process (RTP), and its band profile is characterized by XPS, TEM, internal photoemission (IPE), XRD, and band simulation. The memory devices with an EW show promising performances in fast program (<μs), low-voltage operation (6-8MV/cm), good 10-year data retention at 125 o C, and excellent endurance (>10 7 P/E cycles).

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A Novel Low-Voltage Low-Power Programming Method for NAND Flash Cell by Utilizing Self-Boosting Channel Potential for Carrier Heating

Tsai

Huang

Tsai

et al. 2011

IEEE Trans. Electron Devices

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BAVI-cell: a novel high-speed 50 nm SONOS memory with band-to-band tunneling initiated avalanche injection mechanism

Cited by 3 publications

References 4 publications

A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications

A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications

Potential well engineering by partial oxidation of TiN for high-speed and low-voltage Flash memory with good 125°C data retention and excellent endurance

A Novel Low-Voltage Low-Power Programming Method for NAND Flash Cell by Utilizing Self-Boosting Channel Potential for Carrier Heating

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BAVI-cell: a novel high-speed 50 nm SONOS memory with band-to-band tunneling initiated avalanche injection mechanism

Cited by 3 publications

References 4 publications

A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications

A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications

Potential well engineering by partial oxidation of TiN for high-speed and low-voltage Flash memory with good 125&#x00B0;C data retention and excellent endurance

A Novel Low-Voltage Low-Power Programming Method for NAND Flash Cell by Utilizing Self-Boosting Channel Potential for Carrier Heating

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Potential well engineering by partial oxidation of TiN for high-speed and low-voltage Flash memory with good 125°C data retention and excellent endurance