Nuclear Instruments and Methods in Physics Research Section B:

1991

DOI: 10.1016/0168-583x(91)96218-a

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Beam incidence variations in spinning disk ion implanters

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Jerald P. Dykstra

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Cited by 7 publications

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“…In addition, at 0° implant batch implanters have a significant angle variation [10] where the S-UHE has very little variation. Fig.…”

Section: B Uniformitymentioning

confidence: 99%

Introduction of the S-UHE, a single-wafer ultra-high energy ion implanter

et al. 2014

2014 20th International Conference on Ion Implantation Technology (IIT)

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In order to address the process requirements of leading-edge image sensors, a new single-wafer ultra-high energy ion implanter, the S-UHE, has been developed. This product incorporates two exceptional subassemblies. One is the eighteenstage RF linear accelerator from the UHE, a multi-wafer ultrahigh energy implanter, offering maximum beam energy of 2MeV per charge. The other is the field proven end station used by the MC3-II/GP, a single-wafer medium current implanter, which can provide throughput of over 450 wafers/hour. The S-UHE has a unique beam line concept where beam energy analyzing magnets bend the accelerated beam 180°. This system minimizes tool footprint, providing additional space for maintenance. Other key elements of the beam line include an electrostatic scanner, parallelizing lens and energy filter. The electrostatic scanner provides higher scan speed than mechanical systemssignificantly improving dose uniformity compared to a batch high energy implanter.Additionally, the S-UHE ensures accurate implant angles and ultra-low level of metal contamination, both of which are very important parameters for advanced image sensors.

“…In addition, at 0° implant batch implanters have a significant angle variation [10] where the S-UHE has very little variation. Fig.…”

Section: B Uniformitymentioning

confidence: 99%

Introduction of the S-UHE, a single-wafer ultra-high energy ion implanter

et al. 2014

2014 20th International Conference on Ion Implantation Technology (IIT)

View full text Add to dashboard Cite

In order to address the process requirements of leading-edge image sensors, a new single-wafer ultra-high energy ion implanter, the S-UHE, has been developed. This product incorporates two exceptional subassemblies. One is the eighteenstage RF linear accelerator from the UHE, a multi-wafer ultrahigh energy implanter, offering maximum beam energy of 2MeV per charge. The other is the field proven end station used by the MC3-II/GP, a single-wafer medium current implanter, which can provide throughput of over 450 wafers/hour. The S-UHE has a unique beam line concept where beam energy analyzing magnets bend the accelerated beam 180°. This system minimizes tool footprint, providing additional space for maintenance. Other key elements of the beam line include an electrostatic scanner, parallelizing lens and energy filter. The electrostatic scanner provides higher scan speed than mechanical systemssignificantly improving dose uniformity compared to a batch high energy implanter.Additionally, the S-UHE ensures accurate implant angles and ultra-low level of metal contamination, both of which are very important parameters for advanced image sensors.

Computer simulation of deformed scanning wave effect on dose distribution in ion implantation

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³

1996

Ion Beam Modification of Materials

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Across-wafer channeling variations on batch implanters: a graphical technique to analyze spinning disk systems

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,

Proceedings of 11th International Conference on Ion Implantation Technology

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