Beam test results of NDL Low Gain Avalanche Detectors (LGAD)

Xiao, Siyou; Alderweireldt, S.; Ali, S.; Allaire, C.; Agapopoulou, C.; Atanov, N.; Ayoub, M. K.; Barone, G.; Benchekroun, D.; Buzatu, A.; Caforio, D.; García, L. Castillo; Chan, Yit-Fong; Chen, H.; Cindro, V.; Ciucu, L.; Costa, J. Barreiro Guimarães da; Cui, H.; Miralles, F. Davó; Davydov, Yu. I.; D’amen, G.; Taille, C. De La; Kiuchi, R.; Fan, Yunyun; Falou, A. C.; Ferreira, André S.; Garau, M.; Ge, Jin; Ghosh, Anindya; Giacomini, G.; Gkougkousis, E. L.; Grieco, C.; Guindon, S.; Han, Dejun; Han, Song; Holmberg, M.-L.; Howard, A. S.; Huang, Y.; Jing, M. Q.; Khoulaki, Y.; Kramberger, G.; Kuwertz, E. S.; Lefebvre, Helena; Leite, Marina; Leopold, A.; Li, C.; Li, Q.; Liang, Hongwei; Liang, Z.; Liu, B.; Liu, Jia; Luthfi, A.; Lyu, F.; Malyukov, S.; Mandić, I.; Masetti, L.; Mikuž, M.; Nikolić, Irena; Polidori, Lorenzo; Polifka, R.; Posopkina, Olga Vladlena; Qi, Biao; Ran, K.; Reynolds, Bryan; Rizzi, C.; Manzano, M. Robles; Rossi, Enrico; Rummler, A.; Sacerdoti, S.; Saito, G.T.; Seguin-Moreau, N.; Serin, L.; Shan, Liang; Shi, L.; Shi, X.; Sjostrom, N.F.; Soengen, J.; Stenzel, H.; Szadaj, Antek; Tan, Yuhang; Terzo, S.; Thomas, James Oscar; Tolley, E.; Tricoli, A.; Trincaz-Duvoid, S.; Wang, R.; Wang, S.M.; Wang, W.; Wu, Kewei; Yang, Tao; Yang, Yuzhen; Yu, Chenxia; Zhang, X.; Zhao, Lili; Zhao, Mei; Zhao, Zeping; Zheng, Xiangxuan; Zhuang, X.

doi:10.1016/j.nima.2020.164956

Cited by 9 publications

(7 citation statements)

References 8 publications

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“…The Silicon Low Gain Avalanche Diode (LGAD) has been verified that has better than 50 ps time resolution due to its good S/N between the low gain range (10∼100). And also it has been developed successfully by the various foundries in the past few years [3][4][5][6][7][8][9][10][11]. However, present studies indicate the collected charges of Silicon LGAD decrease rapidly when the irradiation flux up to 2.5×10 15 n eq /cm 2 .…”

Section: Introductionmentioning

confidence: 77%

Simulation of the 4H-SiC Low Gain Avalanche Diode

Yang¹,

Tan²,

Wang³

et al. 2022

Preprint

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Silicon Carbide device (4H-SiC) has potential radiation hardness, high saturated carrier velocity and low temperature sensitivity theoretically. The Silicon Low Gain Avalanche Diode (LGAD) has been verified to have excellent time performance. Therefore, the 4H-SiC LGAD is introduced in this work for application to detect the Minimum Ionization Particles (MIPs). We provide guidance to determine the thickness and doping level of the gain layer after an analytical analysis. The gain layer thickness d gain = 0.5 µm is adopted in our design. We design two different types of 4H-SiC LGAD which have two types electric field, and the corresponding leakage current, capacitance and gain are simulated by TCAD tools. Through analysis of the simulation results, the advantages and disadvantages are discussed for two types of 4H-SiC LGAD.

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Section: Introductionmentioning

confidence: 77%

Simulation of the 4H-SiC Low Gain Avalanche Diode

Yang¹,

Tan²,

Wang³

et al. 2022

Preprint

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“…In a typical set-up, a trigger sensor with known timing characteristics is aligned with the Device Under Test (DUT) and a radioactive 𝛽-source (typically 90Sr, which emits electrons with energies of 0.546 MeV and 2.28 MeV) as indicated in figure 11. Typical betas used in the lab have enough energy to be good approximation of MIPs for the first detector only, while they lose more energy in the second device [1,5,7,8,12,21,23,29,33,35,37,40]. Characterizations at various temperatures was also possible by moving the whole setup inside a cold box.…”

Section: Charge Collection and Timing Measurementsmentioning

confidence: 99%

“…However, there are some differences. For example, When it comes to the creation of electron-hole pairs, the laser beam usually operates within a cylinder with a diameter of approximately 10 μm (depending on the laser optics) but for a MIP, this diameter is considerably smaller, leading to more significant screening effects [1,12,23,24,[37][38][39][40][41][42][43][44][45]. BNL LGADs were used for this study.…”

Section: Gain Suppression Analysismentioning

confidence: 99%

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Analysis of the performance of low gain avalanche diodes for future particle detectors

Vakili,

Pancheri,

Farasat

et al. 2023

J. Inst.

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Low-Gain Avalanche Diodes (LGAD) are the sensor of choice for the timing detectors of the ATLAS and CMS experiments at the High Luminosity Large Hadron Collider (HL-LHC). This paper presents the results of static and dynamic performance evaluations of LGADs manufactured by Hamamatsu Photonics K.K. (HPK) and Brookhaven National Laboratory (BNL). Timing performance was measured using β-scopes after a static characterization of the device (current-voltage and capacitance-voltage curves) and a time resolution better than 35 ps was extracted under high operational bias voltage before irradiation. This value is considered within the nominal requirements of the ATLAS project for un-irradiated sensors. Transient Current Technique (TCT) was used to observe and analyze a gain suppression mechanism, i.e. a decrease in gain correlated with increased laser intensities. TCAD simulations were carried out to interpret the gain suppression of the BNL sensors under different conditions of bias voltage and laser intensity. A good correspondence between experimental observations and TCAD simulations was found.

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“…Recently, also IHEP-NDL has joined the effort of prototyping of LGADs structures (single pixels and arrays) for the ATLAS HGTD [30].…”

Section: Low-gain Avalanche Diodes For Atlas and Cmsmentioning

confidence: 99%

Fabrication of Silicon Sensors Based on Low-Gain Avalanche Diodes

Giacomini

2021

Front. Phys.

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Low-Gain Avalanche Diodes are a recently-developed class of silicon sensors. Characterized by an internal moderate gain that enhances the signal amplitude and if built on thin silicon substrates of a few tens of microns, they feature fast signals and exhibit excellent timing performance. Thanks to their fast timing they are planned to be exploited in timing detectors in High-Energy Physics experiments, for example for the upgrades of the ATLAS and CMS detectors at the High Luminosity Large Hadron Collider (HL-LHC) at CERN. However, to achieve a spatially uniform multiplication a large pixel pitch is needed, preventing a fine spatial resolution. To overcome this limitation, the AC-coupled LGAD approach was introduced. In this type of device, metal electrodes are placed over an insulator at a fine pitch, and signals are capacitively induced on these electrodes. The fabrication technology is similar for the two LGAD families, although a fine tuning of a few process parameters needs to be carefully studied. Other R&D efforts towards detectors that can simultaneously provide good time and spatial resolution, based on the LGAD concept, are under way. These efforts aim also to mitigate the loss of performance at high irradiation fluences due to the acceptor removal within the gain layer. In this paper we describe the main points in the fabrication of LGADs and AC-LGADs in a clean-room. We also discuss novel efforts carried on related topics.

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Beam test results of NDL Low Gain Avalanche Detectors (LGAD)

Cited by 9 publications

References 8 publications

Simulation of the 4H-SiC Low Gain Avalanche Diode

Simulation of the 4H-SiC Low Gain Avalanche Diode

Analysis of the performance of low gain avalanche diodes for future particle detectors

Fabrication of Silicon Sensors Based on Low-Gain Avalanche Diodes

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