Behavior of a rectifying junction at the interface between porous silicon and its substrate

Pulsford, N.J.; Rikken, G. L. J. A.; Kessener, Y.A.R.R.; Lous, E. J.; Venhuizen, A. H. J.

doi:10.1063/1.355802

Cited by 40 publications

(16 citation statements)

References 11 publications

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“…10 However, an interpretation of rectifying characteristics due to the junction between the PS and its Si substrate is also reported in the literature. 11 The present investigation reports results of dc measurements on PS/ p-Si structures sandwiched between two aluminum ͑Al͒ electrodes. The devices are biased at voltages less than 2.0 V. The range of voltages is important since the series resistance becomes a dominant factor for controlling current at relatively high voltages.…”

Section: Introductionmentioning

confidence: 99%

Transport mechanisms in porous silicon

Ray¹,

Mabrook²,

Nabok³

et al. 1998

Journal of Applied Physics

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The current transport mechanism through porous silicon ͑PS͒ films fabricated from 8 to 12 ⍀ cm p-type silicon (p-Si) substrates has been investigated using current-voltage I(V) measurements on metal/PS/p-Si/metal devices in the temperature range of 77-300 K. The characteristics for all devices show a rectifying behavior with ideality factor very close to unity. A value of 0.7 eV is obtained for the barrier height at the interface between PS and bulk p-Si at room temperature and the barrier height is found to increase with rising temperature. A band model is proposed in order to explain the observed characteristics.

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Section: Introductionmentioning

confidence: 99%

Transport mechanisms in porous silicon

Ray¹,

Mabrook²,

Nabok³

et al. 1998

Journal of Applied Physics

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“…The reasons for the low EL efficiency are not understood, but it has been suggested that the ease with which carriers are injected into luminescent states and the transport mechanisms in the porous silicon play an important role. 9 Much higher efficiencies were obtained using a liquid electrolyte junction which contacts the whole porous structure. [10][11][12] The mechanism of the strong visible emission from n-type porous silicon is thought to be similar to that for conventional semiconductors.…”

mentioning

confidence: 99%

“…This structure is inhomogeneous, consisting of ''bulk'' regions and ''quantum-sized'' crystallites. It has been argued that the minority carriers are injected preferentially into bulk regions, 9 which would account for the relatively low intensity of the emitted light. However, using electrolyte contacts there seems to be no problem with carrier injection into luminescent regions provided the energy levels in the solution are favourable.…”

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confidence: 99%

Electroluminescence from porous silicon due to electron injection from solution

Kooij

Despo

Kelly

1995

Applied Physics Letters

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We report on the electroluminescence from p-type porous silicon due to minority carrier injection from an electrolyte solution. The MV ϩ• radical cation formed in the reduction of divalent methylviologen is able to inject electrons into the conduction band of crystalline and porous silicon. The electrochemistry of this redox process at silicon electrodes is briefly described, and electroluminescence due to recombination of the injected electrons with holes from the substrate is described. The results are discussed in terms of a semiconductor model. © 1995 American Institute of Physics.One of the main reasons for the extensive research on porous silicon is the prospect of integrating optical functions into all-silicon devices. To make a device capable of showing electroluminescence ͑EL͒, electrons and holes have to be injected into the porous silicon structure. Radiative recombination of these carriers will give rise to light emission. The first luminescent solid state devices based on this material 1-3 consisted of a porous layer on a crystalline substrate. A semitransparent Au or transparent conducting oxide electrode was deposited on top of the porous layer. These devices were reported to have very low quantum efficiencies (Ͻ10 Ϫ6 ) and require high operating voltages. More recently, different designs 4,5 and better contact materials 6-8 have led to some improvement in the electrical and luminescent properties. The reasons for the low EL efficiency are not understood, but it has been suggested that the ease with which carriers are injected into luminescent states and the transport mechanisms in the porous silicon play an important role. 9Much higher efficiencies were obtained using a liquid electrolyte junction which contacts the whole porous structure. [10][11][12] The mechanism of the strong visible emission from n-type porous silicon is thought to be similar to that for conventional semiconductors. Electron capture from the valence band, i.e., hole injection, is achieved by a strong oxidizing agent ͑electron acceptor͒ in the solution. At appropriate bias the injected holes recombine with electrons from the conduction band. If this recombination is radiative, EL characteristic of the semiconductor can be observed. 13A similar mechanism should hold for p-type semiconductors, only now electron injection into the conduction band is required. This is possible if the occupied energy levels of the redox couple in the solution overlap with the conduction band of the semiconductor. Thus, a strong reducing agent ͑electron donor͒ has to be used. To our knowledge there have been no reports of EL from p-type porous silicon due to minority carrier injection by a reducing agent in solution.14 Light emission during anodic oxidation of p-type porous silicon in indifferent electrolyte has been reported. 15 This has been attributed to electrons released during oxidation of Si-H surface species or of Si-Si bonds. However, this explanation may be suspect as luminescence is also observed under similar conditions at n-type porous...

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“…The electrical characteristics of metal/PS/c-Si/metal structures have been shown to exhibit similar rectifying features irrespective of the metal used for top contacts. Therefore, transport of carriers within the PS layer thickness and across the c-Si/PS hetero-junction governs the device characteristics [7]. Porous silicon photoconductors are commonly fabricated by depositing aluminum film on top of oxidized porous silicon structure.…”

Section: Introductionmentioning

confidence: 99%

Impact of Etching Time on Ideality Factor and Dynamic Resistance of Porous Silicon Prepared by Electrochemical Etching (ECE)

Hadi

2017

ILCPA

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Abstract. In this work, porous silicon layers PS were fabricated on p-type crystalline silicon wafers using electrochemical etching ECE process. Al films were deposited onto porous layer /Si wafers by thermal evaporation to form rectifying junction. An investigation of the dependence on applied etching time to formed PS layer was studied. Effect etching time on the electrical properties of porous silicon is checked using Current-voltage I-V characteristics. The ideality factor and dynamic resistances are found to be large than the one and 20 (kΩ) respectively by the analysis of the dark I-V characteristics of Al/PS/p-Si heterojunction.

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Behavior of a rectifying junction at the interface between porous silicon and its substrate

Cited by 40 publications

References 11 publications

Transport mechanisms in porous silicon

Transport mechanisms in porous silicon

Electroluminescence from porous silicon due to electron injection from solution

Impact of Etching Time on Ideality Factor and Dynamic Resistance of Porous Silicon Prepared by Electrochemical Etching (ECE)

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