Behavior of crystalline silicon under huge electronic excitations: A transient thermal spike description

Chettah, A.; Kucal, H.; Wang, Z. G.; Kąc, M.; Meftah, A.; Toulemonde, M.

doi:10.1016/j.nimb.2009.05.063

Cited by 59 publications

(43 citation statements)

References 73 publications

(153 reference statements)

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“…Under the given irradiation conditions, no ion tracks were observed in a c-Si sample without preamorphization (not shown) consistent with reported threshold values of S e required for ion track formation in this phase. 6,8 No ion tracks were thus present in the c-Si substrate beneath the a-Si layer. Measurements were performed either with the sample surface aligned normal to the x-ray beam, i.e., parallel to the ion tracks, or under an angle of 10 • .…”

Section: Methodsmentioning

confidence: 99%

“…Ion track formation, for example, was only reported for irradiation with fullerene molecular ions with a threshold of S e = 37 keV/nm, [5][6][7] whereas no signature of ion tracks was observed for irradiations with single SHIs. Mixing experiments of a Ni-Si interface under irradiation 8 with single SHIs suggest that melting does occur in c-Si for lower values of S e . The molten ion track, however, appears to fully recrystallize upon cooling, indicating that melting cannot be the only criterion for ion track formation in c-Si.…”

Section: Introductionmentioning

confidence: 95%

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Latent ion tracks in amorphous silicon

et al. 2013

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We present experimental evidence for the formation of ion tracks in amorphous Si induced by swift heavy-ion irradiation. An underlying core-shell structure consistent with remnants of a high-density liquid structure was revealed by small-angle x-ray scattering and molecular dynamics simulations. Ion track dimensions differ for as-implanted and relaxed Si as attributed to different microstructures and melting temperatures. The identification and characterization of ion tracks in amorphous Si yields new insight into mechanisms of damage formation due to swift heavy-ion irradiation in amorphous semiconductors.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 95%

Latent ion tracks in amorphous silicon

et al. 2013

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“…Fitting the two lower fluences with a core-shell model yields the ion-track parameters given in Table I including a total track radius of 11:1 AE 0:2 nm. (The measured radius of an ion track is considered indicative of the maximum melt radius [12,24].) A negative value of the core-to-shell density ratio (Á core =Á shell where Á core and Á shell are the change in density of the core and shell relative to the unirradiated matrix, respectively) indicates core and shell have a density lower and higher, respectively, than the surrounding matrix (or vice versa).…”

mentioning

confidence: 99%

Tracks and Voids in Amorphous Ge Induced by Swift Heavy-Ion Irradiation

et al. 2013

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Ion tracks formed in amorphous Ge by swift heavy-ion irradiation have been identified with experiment and modeling to yield unambiguous evidence of tracks in an amorphous semiconductor. Their underdense core and overdense shell result from quenched-in radially outward material flow. Following a solid-toliquid phase transformation, the volume contraction necessary to accommodate the high-density molten phase produces voids, potentially the precursors to porosity, along the ion direction. Their bow-tie shape, reproduced by simulation, results from radially inward resolidification. DOI: 10.1103/PhysRevLett.110.245502 PACS numbers: 61.80.Jh, 61.43.Dq, 61.43.Bn, 61.05.cf Swift heavy-ion irradiation (SHII) has many applications, spanning geochronological dating [1] to nanostructure fabrication [2]. Though this approach has found industrial application [3], the fundamental nature of ionsolid interactions at very high ion energies remains poorly understood. Such interactions are dominated by inelastic processes (electronic stopping) resulting in the excitation and ionization of substrate atoms while, in contrast, the elastic processes (nuclear stopping) that lead to ballistic atomic displacements at much lower energies are negligible in the SHII regime. The efficiency with which energy deposited in the electronic subsystem is subsequently transferred to the lattice is governed by the electronphonon coupling parameter g where typically g amorphous > g crystalline due to a reduced electron mean free path in the former. When the lattice temperature exceeds that required for melting, a narrow cylinder of molten material is formed along the ion path. The ensuing rapid resolidification of this transient liquid phase can yield remnant structural modifications within the substrate in the form of an ion track.Crystalline Ge (c-Ge) is relatively insensitive to SHII such that ion-track production necessitates very high electronic stopping S e values. Discontinuous tracks follow single-ion irradiation (S e ¼ 35 keV=nm) [4,5] while cluster-ion irradiation (S e ¼ 37-51 keV=nm) yields tracks of diameter 5-15 nm [5]. In contrast, amorphous Ge (a-Ge) is rendered porous under SHII with S e > $10 keV=nm [6] while ion hammering results for S e > $12 keV=nm [6], the latter manifested as a nonzero deformation yield [7]. These observations are consistent with g amorphous > g crystalline and ion-track formation has been suggested as the origin of these two phenomena [6,7]. A recent molecular dynamics (MD) study of irradiated a-Ge [8] suggested voids originate from outgoing shock waves resulting from rapid heating and expansion of the ion-track core. The sole report of ion tracks in a-Ge is that of Furuno et al. [9] who reported recrystallization of tracks in a 5-nm a-Ge layer following SHII in a grazing-incidence orientation, a geometry that can lead to significant reductions in threshold S e values for ion-track formation [10]. The proximity of the surface could also perturb resolidification and enable recrystallization given the molten i...

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“…[44,45] to be in the order of 6x10 22 cm -3 , this way the resultant electronic specific heat being more orders of magnitude higher that the equilibrium one. Toulemonde et al [46] take the thermodynamic parameters for the electron subsystem consistent with those ascribed previously by them to metallic Ge materials [47] and insulators [48]. While the first case does not rise problems, in insulators the authors suppose that hot electrons excited in the conduction band by the passage of the ion behave like free electrons in metals, and supposing that the number of freed electrons per atom is about 1, and using the Dulong-Petit formula, an electronic specific heat constant in temperature, of about 1 J cm -3 K -1 is obtained.…”

Section: Temperature Dependences Of Specific Heats and Thermal Conducmentioning

confidence: 99%

Contribution of the electron–phonon interaction to Lindhard energy partition at low energy in Ge and Si detectors for astroparticle physics applications

Lazanu¹,

Lazanu²

2016

Astroparticle Physics

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The influence of the transient thermal effects on the partition of the energy of selfrecoils in germanium and silicon into energy eventually given to electrons and to atomic recoils respectively is studied. The transient effects are treated in the frame of the thermal spike model, which considers the electronic and atomic subsystems coupled through the electronphonon interaction. For low energies of selfrecoils, we show that the corrections to the energy partition curves due to the energy exchange during the transient processes modify the Lindhard predictions. These effects depend on the initial temperature of the target material, as the energies exchanged between electronic and lattice subsystems have different signs for temperatures lower and higher than about 15 K. Many of the experimental data reported in the literature support the model. Keywords Highlights:-Correction to the Lindhard curves of energy partition for low energy selfrecoils based on the exchange of energy during transient thermal processes between electronic and atomic subsystems -The correction is evaluated for Ge and Si selfrecoils and could improve the present limits of signals to be used in detection.-Low and high temperature limits are calculated for the correction.-A detailed and exhaustive analysis of some properties of Ge and Si, related to transient thermal effects, is performed.

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Behavior of crystalline silicon under huge electronic excitations: A transient thermal spike description

Cited by 59 publications

References 73 publications

Latent ion tracks in amorphous silicon

Latent ion tracks in amorphous silicon

Tracks and Voids in Amorphous Ge Induced by Swift Heavy-Ion Irradiation

Contribution of the electron–phonon interaction to Lindhard energy partition at low energy in Ge and Si detectors for astroparticle physics applications

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