Behavior of Excited Electrons and Holes in Zinc Sulfide Phosphors

Shionoya, Shigeo; Kallmann, H.; Kramer, Bernard M.

doi:10.1103/physrev.121.1607

Cited by 21 publications

(7 citation statements)

References 24 publications

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“…In other words, there is an enhanced TL intensity transfer from low temperature peaks towards high temperature peaks when f decreases. Such a TL intensity transfer was already reported into ZnS:Cu compounds and was assigned to the occurrence of a thermal connection between the traps [16]. Namely, when temperature is raised, a significant portion of the electrons released from S traps may be captured by both I and H traps, while electrons freed from I traps may be only captured by the H traps.…”

Section: Thermoluminescencesupporting

confidence: 64%

The thermally connected traps model applied to the thermoluminescence of Eu2+ doped Ba13−xAl22−2xSi10+2xO66 materials (x∼0.6)

Denis

Deniard²,

Rocquefelte³

et al. 2010

Optical Materials

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The thermoluminescence (TL) properties of the Eu 2+ doped Ba 13-x Al 22-2x Si 10+2x O 66 (x0.6) phosphorescent materials (hereafter labeled BASO:Eu) are analyzed on the basis of the thermally connected traps (TCT) model. Basically, in these materials, Eu 2+ cations are photo-ionized under UV excitation, and electrons are trapped at defects. The return to the ground state is thermo-stimulated, and the freed electrons recombine at photo-oxidized activator sites with emission of light. TL properties between 80 and 650 K, as well as an isothermal emission decay (IED) at room temperature, were collected for BASO:Eu1% and BASO:Eu0.5% samples to characterize the phosphorescence mechanism in this series of materials and to determine the trap depths. Thermoluminescence glow curves of BASO:Eu excited either at 254 nm or at 365 nm, or excited at 254 nm for durations of 10 s and 240 s, as well as the IED, agree well with a TCT model. Based on our analysis, phosphorescence in BASO:Eu compounds is associated with the depletion of five traps with depths of 0.56, 0.61, 0.65, 0.69 and 0.73 eV.

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Section: Thermoluminescencesupporting

confidence: 64%

The thermally connected traps model applied to the thermoluminescence of Eu2+ doped Ba13−xAl22−2xSi10+2xO66 materials (x∼0.6)

Denis

Deniard²,

Rocquefelte³

et al. 2010

Optical Materials

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“…S 2 4S 1 indicates that the radiative efficiency in the release process is higher than that in the charging process. Such an effect has also been observed by Shionoya [2] in similar studies conducted in zinc sulfide doped with Cu + ions in an electron trap model. The holes are left at the luminescent centers after the excited electrons are trapped by the trapping centers, and the transition for the holes released to the valence band is responsible for the quenching effect.…”

Section: Article In Presssupporting

confidence: 50%

“…2). Shionoya [2] has assumed that the charging process of the persistent phosphor is accompanied by a luminescent efficiency decrease owing to the quenching effect of the trapping centers. He described a quenching curve which is submerged in the growth of the charging process.…”

Section: Article In Pressmentioning

confidence: 99%

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Investigation on charging processes and phosphorescent efficiency of SrAl2O4:Eu,Dy

Wang

Yen

2006

Journal of Luminescence

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“…Due to electron traps that draw electrons from the vicinity of the excited centers, for example, Zn vacancies or Cu interstitials, a long lifetime component is reported for ZnS as well. [ 48 ] The non‐calcined samples show a more pronounced short lifetime, possibly due to the healing of these electron‐trapping defects by calcination. Additionally, TRPL measurements were conducted after 40 min of UV irradiation at λ = 330 nm (Figure 8b–d).…”

Section: Resultsmentioning

confidence: 99%

Alumina‐Protected, Durable and Photostable Zinc Sulfide Particles from Scalable Atomic Layer Deposition

Lange

Reichenberger

Bartsch

et al. 2021

Adv Funct Materials

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Zinc sulfide has unique and easily modifiable photophysical properties and is a promising candidate for photocatalysis and optoelectronic devices. However, ZnS suffers from corrosive decomposition during excitation processes like UV irradiation, which drastically limits its field of potential applications. For the first time, complete photostabilization of individual ZnS particles by a dense, durable, and only 3-nm-thick Al 2 O 3 layer, produced by rotary atomic layer deposition (ALD) is reported. In contrast to bare ZnS, the coated particles do not suffer from photocorrosive degradation even under long-term or high power UV irradiation. The presence of a protection layer covering the entire ZnS surface is additionally confirmed by microscopic and spectroscopic investigations of particle cross-sections. Further, complete inhibition of the reaction between Ag + ions added as the analyte and the ZnS surface is observed. Durability tests of the as-prepared Al 2 O 3 layer upon prolonged exposure to water reveal a significant decrease in the protection capability of the layer, which is ascribed to the hydrolysis of the amorphous Al 2 O 3. A calcination step at 1000 °C after the ALD treatment, which leads to crystallization of the amorphous Al 2 O 3 layer, successfully suppresses this hydrolysis and produces an insulating, dense, and inert protection layer.

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Behavior of Excited Electrons and Holes in Zinc Sulfide Phosphors

Cited by 21 publications

References 24 publications

The thermally connected traps model applied to the thermoluminescence of Eu2+ doped Ba13−xAl22−2xSi10+2xO66 materials (x∼0.6)

The thermally connected traps model applied to the thermoluminescence of Eu2+ doped Ba13−xAl22−2xSi10+2xO66 materials (x∼0.6)

Investigation on charging processes and phosphorescent efficiency of SrAl2O4:Eu,Dy

Alumina‐Protected, Durable and Photostable Zinc Sulfide Particles from Scalable Atomic Layer Deposition

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