We have investigated the local leakage current in Pr-oxide thin films formed on Si(001) and Si(111) substrate by conductive atomic force microscopy. In Pr-oxide films formed on Si(111) substrates, many current leakage spots are observed in current images compared to that on Si(001) substrates. We found that the current conduction mechanism in Pr-oxide films is considered a Poole–Frenkel conduction. The X-ray photoelectron spectroscopy analysis revealed that cubic Pr2O3 is preferentially formed near the Pr-oxide/Si(111) interface compared with Si(001) samples. We also found that O2 annealing effectively reduces the leakage current in Pr-oxide films. It is considered that oxygen vacancies in Pr-oxide dominate the leakage current of oxide thin films.