Behavioral Features of MIS Memristors with a Si3N4 Nanolayer Fabricated on a Conductive Si Substrate

Тихов, С. В.; Горшков, О. Н.; Антонов, И. Н.; Tetelbaum, D. I.; Mikhaylov, A. N.; Belov, A. I.; Морозов, А. И.; Karakolis, Panagiotis; Dimitrakis, P.

doi:10.1134/s1063782618120242

Cited by 11 publications

(3 citation statements)

References 16 publications

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“…Resistive switching random access memory (RRAM) can act as a synapse in a neuromorphic chip because of its low-power operation [7], fast switching time [8], high-density integration [9], and multi-level cells (MLC) with analogue switching [10][11][12][13][14]. The various resistive switching characteristics are achieved using a dielectric material and metal electrodes [15][16][17][18][19][20][21][22][23][24][25][26][27]. Additionally, the switching type can be changed depending on the operation conditions, such as the current and voltage levels [28].…”

Section: Introductionmentioning

confidence: 99%

Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al2O3/TiN Stack

Ryu

Kim

2020

Nanomaterials

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In this work, we propose three types of resistive switching behaviors by controlling operation conditions. We confirmed well-known filamentary switching in Al2O3-based resistive switching memory using the conventional device working operation with a forming process. Here, filamentary switching can be classified into two types depending on the compliance current. On top of that, the homogeneous switching is obtained by using a negative differential resistance effect before the forming or setting process in a negative bias. The variations of the low-resistance and high-resistance states in the homogeneous switching are comparable to the filamentary switching cases. However, the drift characteristics of the low-resistance and high-resistance states in the homogeneous switching are unstable with time. Therefore, the short-term plasticity effects, such as the current decay in repeated pulses and paired pulses facilitation, are demonstrated when using the resistance drift characteristics. Finally, the conductance can be increased and decreased by 50 consecutive potentiation pulses and 50 consecutive depression pulses, respectively. The linear conductance update in homogeneous switching is achieved compared to the filamentary switching, which ensures the high pattern-recognition accuracy.

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Section: Introductionmentioning

confidence: 99%

Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al2O3/TiN Stack

Ryu

Kim

2020

Nanomaterials

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“…Metal oxides such as HfO 2 and Al 2 O 3 are popular host insulators in CBRAM devices owing to their stable and reliable resistive switching characteristics compared to organic materials. Recently, nitride-based resistive switching compounds, such as AlN, ZrN, HfN, NiN, and SiN, have been reported to have excellent non-volatile properties comparable to metal oxides in terms of operation speed, endurance, and retention [ 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 ]. Especially, AlN is suitable for resistive switching memory owing to its high thermal conductivity and large band gap with good insulating properties [ 29 , 30 , 31 , 32 ] and could be improved by additional approaches such as the scaling, bilayer structure, and doping like oxide-based RRAM.…”

Section: Introductionmentioning

confidence: 99%

Emulation of Biological Synapse Characteristics from Cu/AlN/TiN Conductive Bridge Random Access Memory

Cho

Kim

2020

Nanomaterials

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Here, we present the synaptic characteristics of AlN-based conductive bridge random access memory (CBRAM) as a synaptic device for neuromorphic systems. Both non-volatile and volatile memory are observed by simply controlling the strength of the Cu filament inside the AlN film. For non-volatile switching induced by high compliance current (CC), good retention with a strong Cu metallic filament is verified. Low-resistance state (LRS) and high-resistance state (HRS) conduction follow metallic Ohmic and trap-assisted tunneling (TAT), respectively, which are supported by I–V fitting and temperature dependence. The transition from long-term plasticity (LTP) to short-term plasticity (STP) is demonstrated by increasing the pulse interval time for synaptic device application. Also, paired-pulse facilitation (PPF) in the nervous system is mimicked by sending two identical pulses to the CBRAM device to induce STP. Finally, potentiation and depression are achieved by gradually increasing the set and reset voltage in pulse transient mode.

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“…Resistive random-access memory (RRAM) is one of the strongest candidates for the next-generation nonvolatile memory technology due to low power consumption [ 1 ], fast switching speed [ 2 ], good complementary metal–oxide–semiconductor (CMOS) compatibility [ 3 , 4 , 5 ], and high scalability [ 6 ]. Until now, RRAM has been developed to focus on its applications such as high-density memory, embedded memory, and neuromorphic system.…”

Section: Introductionmentioning

confidence: 99%

Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic Device

et al. 2021

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In this work, a ZnO-based resistive switching memory device is characterized by using simplified electrical conduction models. The conventional bipolar resistive switching and complementary resistive switching modes are accomplished by tuning the bias voltage condition. The material and chemical information of the device stack including the interfacial layer of TiON is well confirmed by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) analysis. The device exhibits uniform gradual bipolar resistive switching (BRS) with good endurance and self-compliance characteristics. Moreover, complementary resistive switching (CRS) is achieved by applying the compliance current at negative bias and increasing the voltage at positive bias. The synaptic behaviors such as long-term potentiation and long-term depression are emulated by applying consecutive pulse input to the device. The CRS mode has a higher array size in the cross-point array structure than the BRS mode due to more nonlinear I–V characteristics in the CRS mode. However, we reveal that the BRS mode shows a better pattern recognition rate than the CRS mode due to more uniform conductance update.

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Behavioral Features of MIS Memristors with a Si3N4 Nanolayer Fabricated on a Conductive Si Substrate

Cited by 11 publications

References 16 publications

Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al2O3/TiN Stack

Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al2O3/TiN Stack

Emulation of Biological Synapse Characteristics from Cu/AlN/TiN Conductive Bridge Random Access Memory

Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic Device

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