Behaviour of total surface charge in SiO2–Si system under short-pulsed ultraviolet irradiation cycles characterised by surface photo voltage technique

Kang, Ban-Hong; Lee, Wah-Pheng; Yow, H. K.; Tou, Teck Yong

doi:10.1016/j.apsusc.2009.02.056

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2017

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“…Some amount of the excited charge Q ox is transferred to the oxide, where it becomes trapped. Photovoltage [27] and second harmonic generation ex- periments [28] have shown that the trapped oxide charge has an extremely long lifetime, and slowly decays over a period of 2-3 days following UV exposure. The surface oxide charge is balanced by an equal but opposite charge due to the accumulation or depletion of carriers in the underlying silicon.…”

Section: Discussion and Theoretical Modelmentioning

confidence: 99%

Near-Surface Electronic Contribution to Semiconductor Elasticity

et al. 2017

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The influence of the carrier concentration on the elasticity is measured for a microscale silicon resonator. UV radiation is used to generate a surface charge that gates the underlying carrier concentration, as indicated by the device resistance. Correlated with the carrier concentration change is a drop in the resonant frequency that persists for 60 hours following exposure. Model calculations show that the change in resonant frequency is due to the modification of the elastic modulus in the near-surface region. This effect becomes increasingly important as device dimensions are reduced to the nanometer scale, and contributes an important source of instability for micro and nano scale electro mechanical devices operating in radiation environments.

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Section: Discussion and Theoretical Modelmentioning

confidence: 99%