Beiträge zur Kenntnis der Verbindungen des Galliums und Indiums. V. Die Eigenschaften der Galliumtrihalogenide

Klemm, Wilhelm; Jacobi, Helmut

doi:10.1002/zaac.19322070207

Cited by 44 publications

(5 citation statements)

References 15 publications

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“…In the 1930s magnetic and spectroscopic studies by Klemm and Tilk demonstrated that Lecoq de Boisbaudran’s GaCl 2 was actually the mixed-valent salt Ga[GaCl 4 ], and this type of structure was confirmed (for the dichloride and also for the two polymorphs of the dibromide) by extensive investigations using the complete arsenal of modern physical techniques . However, this ionic formula was even more intriguing regarding the solubility of the compounds in aromatic hydrocarbons, since analogous alkali-metal salts M[GaCl 4 ] with cations M having similar cation radii are completely insoluble in benzene, whereas Ga[AlCl 4 ] is again soluble in benzene.…”

Section: Arene Complexes Of the Low-valent Group 13 Element Halides A...mentioning

confidence: 99%

π-Complexation of Post-Transition Metals by Neutral Aromatic Hydrocarbons: The Road from Observations in the 19th Century to New Aspects of Supramolecular Chemistry

2008

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Section: Arene Complexes Of the Low-valent Group 13 Element Halides A...mentioning

confidence: 99%

π-Complexation of Post-Transition Metals by Neutral Aromatic Hydrocarbons: The Road from Observations in the 19th Century to New Aspects of Supramolecular Chemistry

2008

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“…Nevertheless, due to the high chlorine affinity of the AlGaN surface, a residual 1% Cl remains at the surface. Additionally tested surface bromination results in a highly hygroscopic GaBr 3 30 termination which was too reactive in experimental conditions. In contrary, fluorine forms a stable Ga−F (or Al−F) bond with ΔH f 0 = 577 kJ/mol or even 664 kJ/ mol for Al−F 31 and desorption is suggested to occur only above T > 500 °C.…”

Section: Figure 2amentioning

confidence: 99%

Tracking the Effect of Adatom Electronegativity on Systematically Modified AlGaN/GaN Schottky Interfaces

Reiner

Pietschnig

Ostermaier

2015

ACS Appl. Mater. Interfaces

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The influence of surface modifications on the Schottky barrier height for gallium nitride semiconductor devices is frequently underestimated or neglected in investigations thereof. We show that a strong dependency of Schottky barrier heights for nickel/aluminum-gallium nitride (0001) contacts on the surface terminations exists: a linear correlation of increasing barrier height with increasing electronegativity of superficial adatoms is observed. The negatively charged adatoms compete with the present nitrogen over the available gallium (or aluminum) orbital to form an electrically improved surface termination. The resulting modification of the surface dipoles and hence polarization of the surface termination causes observed band bending. Our findings suggest that the greatest Schottky barrier heights are achieved by increasing the concentration of the most polarized fluorine-gallium (-aluminum) bonds at the surface. An increase in barrier height from 0.7 to 1.1 eV after a 15% fluorine termination is obtained with ideality factors of 1.10 ± 0.05. The presence of surface dipoles that are changing the surface energy is proven by the sessile drop method as the electronegativity difference and polarization influences the contact angle. The extracted decrease in the Lifshitz-van-der-Waals component from 48.8 to 40.4 mJ/m(2) with increasing electronegativity and concentration of surface adatoms confirms the presence of increasing surface dipoles: as the polarizability of equally charged anions decreases with increasing electronegativity, the diiodomethane contact angles increase significantly from 14° up to 39° after the 15% fluorine termination. Therefore, a linear correlation between increasing anion electronegativity of the (Al)GaN termination and total surface energy within a 95% confidence interval is obtained. Furthermore, our results reveal a generally strong Lewis basicity of (Al)GaN surfaces explaining the high chemical inertness of the surfaces.

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“…Anhydrous gallium (III) bromide was prepared by passing nitrogen laden with bromine over gallium metal at 300°C. (7) and repeatedly subliming the product in dry nitrogen. Anhydrous gallium (III) chloride was prepared by passing dry hydrogen chloride over gallium metal at 200°C.…”

Section: A Materialsmentioning

confidence: 99%

The Some Physicochemical Studies on Gallium(III) Salt Solutions.

Moeller¹,

King²

1950

J. Phys. Chem.

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IKTRODUCTIONAmong the characteristics of the gallium-indium-thallium family essential to its systematic study are trends and variations in basicity. The combined effects of small size and comparatively high charge among the tripositive ions of these elements should render all of them quite highly acidic, but significant differences should be discernible as these factors vary. Variations in basicity hare been studied as part of a general investigation of comparative properties in this family. I t is the purpose of this communication to summarize results obtained with gallium(II1) compounds by the techniques of electrometric titration with alkali and measurement of pH as a function of salt concentration and to compare them with existent data for indium(II1) compounds.Previously reported measurements of these types have been limited in number and lacking in agreement. Fricke and Meyring (3) obtained data, based upon a hydrogen electrode study of titration of gallium(II1) chloride solutions with sodium and potassium hydroxides, which indicate precipitation of the hydrous oxide (9) in the vicinity of pH 2.8-3.1. Von Bergkampf (15) reported precipitation from hydrochloric acid solution at pH 3.4 and from sodium hydroxide solution at pH 9.7 as a result of single titrations of 0.1 N gallium(II1) chloride solutions, a quinhydrone electrode being used. More recently Ivanov-Emin and Rabovik (5) found from a hydrogen electrode study that precipitation from 0.01 M gallium(II1) chloride solutions began at pH 3.48-3.50 with 2.6 equivalents of sodium hydroxide added and was complete at pH 6.7-6.8 with 2.8-2.9 equivalents. With 0.005 M gallium(II1) sulfate solutions, however, precipitation began at pH 3.4C-3.45 with 0.2 equivalent and was complete at pH 4.7-4.8 with 2.5-2.6 equivalents. Dissolution of the hydrous precipitate at pH 9.6-9.7 after addition of 4.0-4.2 equivalents of alkali was considered evidence for the formation of the species [Ga(OH)J-in solution. Lacroix (8) obtained precipitation from 0.007 M gallium(II1) chloride solution at ca. pH 3.2 and dissolution of the hydrous oxide over a broad range above pH 6.Hydrolysis studies on gallium(II1) salt solutions appear limited to those of Fricke and his coworkers (2, 3). A preliminary measurement (2) of hydrogenion concentration showing 0.1875 N gallium(II1) chloride solution to be 32.9 per cent hydrolyzed was followed (3) by similar measurements as functions of

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Beiträge zur Kenntnis der Verbindungen des Galliums und Indiums. V. Die Eigenschaften der Galliumtrihalogenide

Abstract: 1. ES werden die Galliumtrihalogenide dargestellt und Schmelz‐ und Siedepunkte, Dichten im festen und geschmolzenen Zustand, Ausdehnungskoeffizienten und Leitfähigkeiten der Schmelzen bestimmt.

Cited by 44 publications

References 15 publications

π-Complexation of Post-Transition Metals by Neutral Aromatic Hydrocarbons: The Road from Observations in the 19th Century to New Aspects of Supramolecular Chemistry

π-Complexation of Post-Transition Metals by Neutral Aromatic Hydrocarbons: The Road from Observations in the 19th Century to New Aspects of Supramolecular Chemistry

Tracking the Effect of Adatom Electronegativity on Systematically Modified AlGaN/GaN Schottky Interfaces

The Some Physicochemical Studies on Gallium(III) Salt Solutions.

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