Belt furnace gettering and passivation of <i>n</i>‐web silicon for high‐efficiency screen‐printed front‐surface‐field solar cells

Ebong, Abasifreke; Hilali, Mohamed M.; Rohatgi, A.; Meier, D.L.; Ruby, D.S.

doi:10.1002/pip.381

Cited by 5 publications

(4 citation statements)

References 4 publications

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“…Well passivated front and rear surfaces ensure that this cell exhibits a very high IQE across the whole spectral range. For the simulations involving an encapsulated cell, the IQE curve for a typical screen-printed monocrystalline solar cell, obtained from Ebong et al, was used [25]. This was corrected to remove absorption in the thin-film coating applied to this cell [23].…”

Section: Internal Quantum Efficiencymentioning

confidence: 99%

Optimization of moth‐eye antireflection schemes for silicon solar cells

Boden

Bagnall

2010

Progress in Photovoltaics

146

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Nanostructured moth-eye antireflection schemes for silicon solar cells are simulated using rigorous coupled wave analysis and compared to traditional thin film coatings. The design of the moth-eye arrays is optimized for application to a laboratory cell (air-silicon interface) and an encapsulated cell (EVA-silicon interface), and the optimization accounts for the solar spectrum incident on the silicon interface in both cells, and the spectral response of both types of cell. The optimized moth-eye designs are predicted to outperform an optimized double layer thin film coating by approximately 2% for the laboratory cell and approximately 3% for the encapsulated cell. The predicted performance of the silicon moth-eye under encapsulation is particularly remarkable as it exhibits losses of only 0Á6% compared to an ideal AR surface.

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Section: Internal Quantum Efficiencymentioning

confidence: 99%

Optimization of moth‐eye antireflection schemes for silicon solar cells

Boden

Bagnall

2010

Progress in Photovoltaics

146

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“…An IQE curve for a typical screen-printed monocrystalline solar cell is obtained from Ebong et al 29 . However, this includes absorption in the thin film ARC, which is a layer of PECVD SiN x with a thickness, t, of 86 nm.…”

Section: Iqementioning

confidence: 99%

“…IQE data for screen-printed cell modeled in this study (from Ebong et al29 ). Dotted line: original IQE data, solid line: IQE data with effect of absorption in thin film ARC removed…”

mentioning

confidence: 99%

Sunrise to sunset optimization of thin film antireflective coatings for encapsulated, planar silicon solar cells

Boden

Bagnall

2009

Progress in Photovoltaics

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We present an approach for the optimization of thin film antireflective coatings for encapsulated planar silicon solar cells in which the variations in the incident spectra and angle of incidence (AOI) over a typical day are fully considered. Both the angular and wavelength dependences of the reflectance from the surface, absorptance within the coating, and transmittance into the device are calculated for both single-and doublelayer antireflection coatings with and without thin silicon oxide passivation layers. These data are then combined with spectral data as a function of time of day and internal quantum efficiency to estimate the average short-circuit current produced by a fixed solar cell during a day. This is then used as a figure of merit for the optimization of antireflective layer thicknesses for modules placed horizontally at the equator and on a roof in the UK. Our results indicate that only modest gains in average short-circuit current could be obtained by optimizing structures for sunrise to sunset irradiance rather than AM1Á5 at normal incidence, and fabrication tolerances and uniformities are likely to be more significant. However, we believe that this overall approach to optimization will be of increasing significance for new, potentially asymmetric, antireflection schemes such as those based on subwavelength texturing or other photonic or plasmonic technologies currently under development especially when considered in combination with modules fixed at locations and directions that result in asymmetric spectral conditions.

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“…The n-type cells require either boron diffusion or twostep firing using Al emitter to avoid Al spiking or shunting of the p-n junction. In 2000, we demonstrated >14%-efficienct 4-cm 2 n-type dendritic web silicon solar cells [1]. The cell was fabricated using IR belt furnace to form the front surface field and back Al p-n junction.…”

Section: Introductionmentioning

confidence: 99%

Rapid Thermal Processing of High Efficiency N-Type Silicon Solar Cells with Al Back Junction

Ebong

Upadhyaya

Rounsaville

et al. 2006

2006 IEEE 4th World Conference on Photovoltaic Energy Conference

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In this paper we report on the design, fabrication and modeling of 49 cm 2 , 200-mm thick, 1-5 W-cm, n-and ptype <111> and <100> screen-printed silicon solar cells. A simple process involving RTP front surface phosphorus diffusion, low frequency PECVD silicon nitride deposition, screen-printing of Al metal and Ag front grid followed by co-firing of front and back contacts produced cell efficiencies of 15.4% on n-type <111> Si, 15.1% on n-type <100> Si, 15.8% on p-type <111> Si and 16.1% on p-type <100> Si. Open circuit voltage was comparable for n and p type cells and was also independent of wafer orientation. High fill factor values (0.771-0.783) for all the devices ruled out appreciable shunting which has been a problem for the development of co-fired n-type <100> silicon solar cells with Al back junction. Model calculations were performed using PC1D to support the experimental results and provide guidelines for achieving >17% n-type silicon solar cells by rapid firing of Al back junction.

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Belt furnace gettering and passivation of n‐web silicon for high‐efficiency screen‐printed front‐surface‐field solar cells

Cited by 5 publications

References 4 publications

Optimization of moth‐eye antireflection schemes for silicon solar cells

Optimization of moth‐eye antireflection schemes for silicon solar cells

Sunrise to sunset optimization of thin film antireflective coatings for encapsulated, planar silicon solar cells

Rapid Thermal Processing of High Efficiency N-Type Silicon Solar Cells with Al Back Junction

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