Benchmark characterization of the thermoelectric properties of individual single-crystalline CdS nanowires by a H-type sensor

Wang, Haidong; Zheng, Dingshan; Zhang, Xing; Takamatsu, Hiroshi; Hu, Weida

doi:10.1039/c7ra02734f

Cited by 5 publications

(6 citation statements)

References 34 publications

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“…图 2： (a)基于场效应晶体管对二维半导体热电性质测量器件示意图 [24] ； (b) 利用电子双层结构离子液体晶体管对二维材料的热电性质测量器件示意图 [25] ；( c)悬空热桥法器件示意图 [26] ； (d)利用 H 型方法测量样品的塞贝克系数示意图 [27] 。 Fig2. (a) Schematic image of device for measuring thermoelectric property based on field effect transistor (FET).…”

Section: 热电性能的测量原理unclassified

“…Reproduced with permission. [27] Copyright 2017, The Royal Society of Chemistry. [10,28] 。至此，可以得出热电压和温度差，即可算出塞贝克系数的大小。同时，利用这种方法还可以测量样品的电导率，1-4 电极可以用作四端法进行测量样品电导率和迁移率 [29] 。四端法由于可以避免接触电阻和肖特基势垒带来的影响，从而有能力获得更加精确的结果 [30] 。例如，在 80 K 温度下，四端法测量的双层 MoS 2 迁移率相比两端法的测量结果提高了一个数量级，从而实现对样品通道本征性质的测量 [28,[31][32][33][34]…”

Section: 热电性能的测量原理unclassified

“…拉曼法、电子束自加热法、TDTR 等等 [22] 。本文对二维材料的热导率测量方法进行简单介绍，对该系列测试方法及原理详见其他综述文章 [7,22,[36][37][38] ，本文着重介绍能同时适用于二维材料热导率与电学性质的测试方法。 2.2 悬空热桥法悬空热桥法在 2003 年被 Shi 等人提出 [39] ，是测量微纳尺度热传导的主要方法之一，它具有着较高的测量精度和适中的操作难度，随着微纳尺度加工技术的不断发展，其也被越来越广泛地被应用。悬空热桥法由四根悬臂和两个加热电极组成 [22,26] ，如图 2c 所示。它可以同时测量样品的热导率、电导率和塞贝克系数，测试样品可以利用干法转移、湿法转移、pick-up 方法 [40][41][42] [27,43,44] 。H 型测量方法有着高的电测量精度、可选择激光都是对热电性能不利的 [45] 。因此对于二维热电材料的研究，大多数都集中于半导体材料。由 Goldsmid−Sharp 可知，可以从禁带宽度预测材料塞贝克最大值 [46,47] ， max max…”

Section: 热电性能的测量原理unclassified

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Recent progress of 2-dimensional layered thermoelectric materials

Yu¹,

Wu²,

Zhao³

2023

Acta Phys. Sin.

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Nowadays, there are enormous amounts of energy wasted in the world, most of which is in the form of waste heat. Thermoelectric effect, by converting heat energy into electricity without the release of dangerous substances, has attracted more and more interest from researchers. Since the discovery of graphene, more and more twodimensional layered materials have been reported, which typically own superior electrical, optical and other physical properties than that of bulk materials, and the development of the new theory and experiment technologies stimulates further research for them as well. In this paper, we firstly introduce the measurement methods and techniques that are appropriate for the thermoelectric properties characterizations of two-dimensional materials, and then discuss the current challenging issues related to that. Subsequently, graphene, transition metal disulfides, black phosphorus and other 2D materials in thermoelectric applications are introduced. Finally, we discuss the various strategies to improve the thermoelectric performance and the problems that need to be solved urgently.

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Section: 热电性能的测量原理unclassified

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Recent progress of 2-dimensional layered thermoelectric materials

Yu¹,

Wu²,

Zhao³

2023

Acta Phys. Sin.

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“…This method measures temperature more accurately. Wang et al [34] measured the thermoelectric properties of a single-crystal cadmium sulfide nanowire using the H-type method. The Seebeck coefficient, thermal conductivity, and electrical conductivity were measured on the same sample under test by simply changing the external circuit.…”

Section: Introductionmentioning

confidence: 99%

A New Laser-Combined H-Type Device Method for Comprehensive Thermoelectrical Properties Characterization of Two-Dimensional Materials

Zheng,

Zhao,

Wang

et al. 2023

Materials

Self Cite

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Two-dimensional nanomaterials have obvious advantages in thermoelectric device development. It is rare to use the same experimental system to accurately measure multiple thermoelectrical parameters of the same sample. Therefore, scholars have developed suspended microdevices, T-type and H-type methods to fulfill the abovementioned requirements. These methods usually require a direct-current voltage signal to detect in Seebeck coefficient measurement. However, the thermoelectric potential generated by the finite temperature difference is very weak and can be easily overwritten by the direct-current voltage, thereby affecting the measurement accuracy. In addition, these methods generally require specific electrodes to measure the thermoelectric potential. We propose a measurement method that combines laser heating with an H-type device. By introducing a temperature difference in two-dimensional materials through laser heating, the thermoelectric potential can be accurately measured. This method does not require specific electrodes to simplify the device structure. The thermoelectrical parameters of supported graphene are successfully measured with this method; the results are in good agreement with the literature. The proposed method is unaffected by material size and characteristics. It has potential application value in the characterization of thermoelectric physical properties.

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“…A number of recently developed techniques enable the growth of NWs of various materials with different diameters, cross sections (square, hexagon, triangle), crystal orientations, dopings, surface roughness as well as core-shell structures [27][28][29][30]. Precise control of the physical and chemical properties of the NWs enables the effective decoupling of electric and thermal conductivities, thus achieving ZT one or two orders of magnitudes larger than in their bulk counterparts, as was shown in Si [17,18], ZnO [31], Bi 2 Te 3 [32,33], SiGe [34], CdS [35] and SnSe [36] NWs. The coreshell nanostructuring also contributes to lower the thermal conductivity of Bi 2 Te 2 S-Bi 2 S 3 , Bi 2 Te 3 -Bi 2 S 3 , Ge-Si, and PbTe-PbSe NWs due to the scattering of phonons at the heterojunction (see Ref.…”

Section: Introductionmentioning

confidence: 99%

Nanowires: A route to efficient thermoelectric devices

Domı́nguez-Adame

Martín‐González

Sánchez

et al. 2019

Physica E: Low-dimensional Systems and Nanostructures

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Miniaturization of electronic devices aims at manufacturing ever smaller products, from mesoscopic to nanoscopic sizes. This trend is challenging because the increased levels of dissipated power demands a better understanding of heat transport in small volumes. A significant amount of the consumed energy in electronics is transformed into heat and dissipated to the environment. Thermoelectric materials offer the possibility to harness dissipated energy and make devices less energy-demanding. Heat-to-electricity conversion requires materials with a strongly suppressed thermal conductivity but still high electronic conduction. Nanowires can meet nicely these two requirements because enhanced phonon scattering at the surface and defects reduces the lattice thermal conductivity while electric conductivity is not deteriorated, leading to an overall remarkable thermoelectric efficiency. Therefore, nanowires are regarded as a promising route to achieving valuable thermoelectric materials at the nanoscale. In this paper, we present an overview of key experimental and theoretical results concerning the thermoelectric properties of nanowires. The focus of this review is put on the physical mechanisms by which the efficiency of nanowires can be improved. Phonon scattering at surfaces and interfaces, enhancement of the power factor by quantum effects and topological protection of electron states to prevent the degradation of electrical conductivity in nanowires are thoroughly discussed.

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Benchmark characterization of the thermoelectric properties of individual single-crystalline CdS nanowires by a H-type sensor

Abstract: A precision H-type sensor method has been developed to measure the thermoelectric performance of individual single-crystalline CdS nanowires for the first time.

Cited by 5 publications

References 34 publications

Recent progress of 2-dimensional layered thermoelectric materials

Recent progress of 2-dimensional layered thermoelectric materials

A New Laser-Combined H-Type Device Method for Comprehensive Thermoelectrical Properties Characterization of Two-Dimensional Materials

Nanowires: A route to efficient thermoelectric devices

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