Benchmarking study of EUV resists for NXE:3300B

Fan, Yu-Jen; Mellish, Mac; Chun, Jun Sung; McWilliams, Scott R.; Montgomery, Cecilia; Montgomery, Warren

doi:10.1117/12.2222065

Cited by 3 publications

(2 citation statements)

References 3 publications

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“…In sub-10 nm fabrication, the suppression of stochastic phenomena, such as line edge=width roughness (LER=LWR), is an important issue. 6,7) The trade-off relationship between LER and sensitivity is well known. 8,9) LER is inversely proportional to the sensitivity.…”

Section: Introductionmentioning

confidence: 99%

Relationship between sensitizer concentration and resist performance of chemically amplified extreme ultraviolet resists in sub-10 nm half-pitch resolution region

Kozawa

Santillan

Itani

2016

Jpn. J. Appl. Phys.

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The development of lithography processes with sub-10 nm resolution is challenging. Stochastic phenomena such as line width roughness (LWR) are significant problems. In this study, the feasibility of sub-10 nm fabrication using chemically amplified extreme ultraviolet resists with photodecomposable quenchers was investigated from the viewpoint of the suppression of LWR. The relationship between sensitizer concentration (the sum of acid generator and photodecomposable quencher concentrations) and resist performance was clarified, using the simulation based on the sensitization and reaction mechanisms of chemically amplified resists. For the total sensitizer concentration of 0.5 nm−3 and the effective reaction radius for the deprotection of 0.1 nm, the reachable half-pitch while maintaining 10% critical dimension (CD) LWR was 11 nm. The reachable half-pitch was 7 nm for 20% CD LWR. The increase in the effective reaction radius is required to realize the sub-10 nm fabrication with 10% CD LWR.

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Section: Introductionmentioning

confidence: 99%

Relationship between sensitizer concentration and resist performance of chemically amplified extreme ultraviolet resists in sub-10 nm half-pitch resolution region

Kozawa

Santillan

Itani

2016

Jpn. J. Appl. Phys.

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“…Despite these efforts, far too little progress has been made in reducing the effects of stochastics, such as linewidth roughness (LWR), line-edge roughness (LER), and local critical dimension uniformity (LCDU). 1 Reducing roughness requires a thorough understanding of roughness and its causes. 2,3 And understanding roughness requires, among other things, trustworthy measurements of roughness.…”

Section: Introductionmentioning

confidence: 99%

Reducing roughness in extreme ultraviolet lithography

Mack¹

2018

J. Micro/Nanolith. MEMS MOEMS

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Abstract. Pattern roughness is a major problem in advanced lithography for semiconductor manufacturing, especially for the insertion of extreme ultraviolet (EUV) lithography as proposed in the coming years. Current approaches to roughness reduction have not yielded the desired results. Here, a global optimization approach is proposed, taking advantage of the different strengths and weaknesses of lithography and etch. Lithography should focus on low-frequency roughness by minimizing both the low-frequency power spectral density (PSD) and the correlation length. Etch should focus on high frequency roughness by growing the correlation length. By making unbiased measurements of the roughness, including the PSD, the parameters needed to guide these optimization efforts become available. The old approach, of individually seeking to reduce the 3σ roughness of pre-and postetch features, is unlikely to lead to the required progress in overall roughness reduction for EUV.

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Overview of materials and processes for lithography

Lawson

Robinson

2016

Materials and Processes for Next Generation Lithography

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Benchmarking study of EUV resists for NXE:3300B

Cited by 3 publications

References 3 publications

Relationship between sensitizer concentration and resist performance of chemically amplified extreme ultraviolet resists in sub-10 nm half-pitch resolution region

Relationship between sensitizer concentration and resist performance of chemically amplified extreme ultraviolet resists in sub-10 nm half-pitch resolution region

Reducing roughness in extreme ultraviolet lithography

Overview of materials and processes for lithography

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