2022
DOI: 10.1109/jflex.2022.3167372
|View full text |Cite
|
Sign up to set email alerts
|

Bendable 190-GHz Transmitter on 20-μm Ultra-Thin SiGe BiCMOS

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
1
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
5
1

Relationship

0
6

Authors

Journals

citations
Cited by 7 publications
(3 citation statements)
references
References 70 publications
0
1
0
Order By: Relevance
“…The AC resistance was obtained using the fitted frequency-192 While the diode used is not flexible or printable, existing solution-processed Schottky diodes cannot support the required power levels beyond 1 W [32]. The flexibility of the circuit can be improved by using a bare-die component on a thinned chip, making it more bendable [33], where the reliable integration of bare-dies within e-textiles has previously been demonstrated [34]. The rectifier was encapsulated using a conformable pressed PU film, improving the mechanical reliability and isolating the conductive traces from the user.…”
Section: B Coil Capacitor and Rectifier Designmentioning
confidence: 99%
“…The AC resistance was obtained using the fitted frequency-192 While the diode used is not flexible or printable, existing solution-processed Schottky diodes cannot support the required power levels beyond 1 W [32]. The flexibility of the circuit can be improved by using a bare-die component on a thinned chip, making it more bendable [33], where the reliable integration of bare-dies within e-textiles has previously been demonstrated [34]. The rectifier was encapsulated using a conformable pressed PU film, improving the mechanical reliability and isolating the conductive traces from the user.…”
Section: B Coil Capacitor and Rectifier Designmentioning
confidence: 99%
“…The latter approach has the advantage of high carrier mobilities in established highspeed silicon technologies needed for operation at mmWave frequencies [16]. Thinned down to 20 µm, silicon chips get flexible and even more stable during bending compared to larger thicknesses between 50 µm to 100 µm [17]- [19]. At mmWave frequencies, thinning down these structures impacts not only the characteristics of active devices such as transistors but also passives such as transmission lines [20], [21].…”
Section: (B)mentioning
confidence: 99%
“…Therefore, rigid semiconductor die thinning is a common approach for realizing bendable and potentially biodegradable ICs, while retaining most of the performance of conventional ICs. Recently, a 120 GHz transmitter with an on-chip antenna was fabricated in a standard SiGe BiCMOS process and demonstrated high mechanical flexibility after being thinned to 20 μm [18]. The reduction in the die's thickness resulted in around 4 dB loss in the radiated power output but had a minimal influence on the frequency stability.…”
Section: A Sustainable Manufacturing and Recyclingmentioning
confidence: 99%