Bending Stress Induced Performance Change in Plastic Oxide Thin-Film Transistor and Recovery by Annealing at 300 °C

Hasan, Mehedi; Billah, Mohammad Masum; Mude, Narendra Naik; Um, Jae Gwang; Jang, Jin

doi:10.1109/led.2017.2718565

Cited by 45 publications

(24 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…From the transfer characteristics, it is apparent that, without a buried CNT layer, TFTs undergo a negative V Th shifts of 4 V, whereas, the TFTs with buried CNT layer exhibits stable operation with V Th of 0.5 V under increasing mechanical strain. The origin of V Th instability in flexible a-IGZO TFTs under mechanical strain was previously explained as the strain induced generation of defect states in the a-IGZO layer [19]- [23]. In Fig.…”

Section: Resultsmentioning

confidence: 93%

Robust Oxide Thin-Film Transistors With Embedded CNT Buried Layer for Stretchable Electronics

Hasan

Billah

et al. 2019

IEEE J. Electron Devices Soc.

Self Cite

View full text Add to dashboard Cite

We report the impact of carbon nanotube (CNT) buried layer in the middle of 7 μm polyimide (PI) substrate on the electrical performance of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) by repetitive mechanical stretching. TFT arrays on 3 mm × 3 mm PI layers were attached on 40 μm polydimethylsiloxane (PDMS) substrate by double-sided PI tape. A negative threshold voltage shift (V Th (V)) of −3 V has been found under 70% mechanical stretching for the TFTs on the conventional PI substrate, whereas the TFTs with CNT layer inside PI substrate exhibited robust TFT performance. The fabricated oxide TFTs reported here with CNT inside PI substrate shows field effect mobility (μ FE) ∼ 14 cm 2 /V • s at pristine state, and changed <5% after repetitive mechanical stretching and bending which might be attributed from the strain absorbing CNT layer inside PI substrate using TCAD simulation.

show abstract

Section: Resultsmentioning

confidence: 93%

Robust Oxide Thin-Film Transistors With Embedded CNT Buried Layer for Stretchable Electronics

Hasan

Billah

et al. 2019

IEEE J. Electron Devices Soc.

Self Cite

View full text Add to dashboard Cite

show abstract

“…25 The tensile strain is 0.116%, 0.232%, 0.347%, and 0.625% corresponding to the radius of curvature 50, 30, 20, and 10 mm, respectively. 26 The degradation of SS under tensile strains is ascribed to the acceptorlike defects such as interstitial oxygen formed by breaking metaloxygen bonds. 27 The TFT characteristics deterioration such as SS degrades caused by the mechanical stress lead to the stages in the gate driver becoming slower, which will gradually decrease the brightness of the bent area in flexible display panel.…”

Section: Resultsmentioning

confidence: 99%

36.3: Flexible ZnO Thin‐Film Transistors Fabricated on PEN Substrate by Atomic Layer Deposition at Low Temperature

Dong

et al. 2021

Symp Digest of Tech Papers

View full text Add to dashboard Cite

Flexible ZnO thin‐film transistors (TFTs) have been successfully fabricated by atomic layer deposition (ALD) on polyethylene naphthalate (PEN) substrate with a maximum processing temperature of 200 °C. The flexible ZnO TFTs show competitive electrical properties with high saturation mobility (μsat) of 17.5 cm2/Vs, small subthreshold slope (SS) of 91 mV/dec, high Ion/Ioff of 3.8×109 and good uniformity. The larger characteristic trapping time τ for flexible ZnO TFT under NBS is the indication of less trapped charges compared with the device under PBS. In addition, we also investigate the mechanical bending test of flexible ZnO TFTs. The flexible ZnO TFTs exhibit a negative turn‐on voltage (Von) shift and degraded SS with increasing tensile strains because the mechanical strain at the bending part of TFT channel generates donor‐like and acceptor‐like defects. Our results demonstrate that ALD process flexible ZnO TFTs exhibiting tremendous potential to be applicable in flexible electronics.

show abstract

“…Furthermore, when the radius of curvature and the mechanical stress increase beyond tolerance, cracks in the substrate emerge and TFTs will fail. Hence, it is necessary for researchers to comprehend the impact of mechanical stress on flexible device performance [173][174][175][176][177][178][179][180][181][182][183]. In fact, with the widely extending use of flexible applications, bending behaviors of the TFTs will become more and more complex.…”

Section: Flexible Tfts Under Mechanical Stressmentioning

confidence: 99%

Research Progress on Flexible Oxide-Based Thin Film Transistors

Zhang

Xiao

et al. 2019

Applied Sciences

View full text Add to dashboard Cite

Oxide semiconductors have drawn much attention in recent years due to their outstanding electrical performance, such as relatively high carrier mobility, good uniformity, low process temperature, optical transparency, low cost and especially flexibility. Flexible oxide-based thin film transistors (TFTs) are one of the hottest research topics for next-generation displays, radiofrequency identification (RFID) tags, sensors, and integrated circuits in the wearable field. The carrier transport mechanism of oxide semiconductor materials and typical device configurations of TFTs are firstly described in this invited review. Then, we describe the research progress on flexible oxide-based TFTs, including representative TFTs fabricated on different kinds of flexible substrates, the mechanical stress effect on TFTs and optimized methods to reduce this effect. Finally, an outlook for the future development of oxide-based TFTs is given.

show abstract

Bending Stress Induced Performance Change in Plastic Oxide Thin-Film Transistor and Recovery by Annealing at 300 °C

Cited by 45 publications

References 31 publications

Robust Oxide Thin-Film Transistors With Embedded CNT Buried Layer for Stretchable Electronics

Robust Oxide Thin-Film Transistors With Embedded CNT Buried Layer for Stretchable Electronics

36.3: Flexible ZnO Thin‐Film Transistors Fabricated on PEN Substrate by Atomic Layer Deposition at Low Temperature

Research Progress on Flexible Oxide-Based Thin Film Transistors

Contact Info

Product

Resources

About