Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.
DOI: 10.1109/iitc.2005.1499904
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BEOL process integration with Cu/SiCOH (k=2.8) low-k interconnects at 65 nm groundrules

Abstract: This paper describes a comprehensive characterization of a 65 nm, 300" wafer size interconnect technology with SiCOH material (k=2.8). Excellent film properties of SiCOH material and precise process optimization enable the minimization of damaged layer during etching and strip processes. 3D modeling reveals that the k-value of SiCOH material was maintained at its initial value after the integration. Electrical yield, reliability and chip-to-package (CPI) evaluation are also presented. The results were comparab… Show more

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Cited by 6 publications
(4 citation statements)
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“…The dielectrics of SiN, SiNO, SiCN, SiCOH, pSiCOH for pinch off deposition were deposited in a commercial high throughput production-worthy 13.6 MHz RF 300 mm Plasma Chemical Vapor Deposition process (PECVD) system at 350 C. The dielectrics were deposited using a combination of various silane (SiH4) or carbosilane or organosilicon precursors with other reactant gases such as Ammonia ((NH 3 ), Nitrogen (N 2 ), Oxygen (O 2 ), or Nitrous Oxide (N 2 O) as described in previous publications. [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29] The advanced highly robust conformal SiN 6 was deposited by cyclic processing using Silane, Ammonia and Nitrogen. The SiCN dielectric was also deposited at 350 C using a combination of Trimethyl Silane (TMS) + Ammonia (NH 3 ) and (optionally) with Hydrogen for robust SiCN film.…”
Section: Experiment-film Deposition and Pinch Off Processmentioning
confidence: 99%
See 1 more Smart Citation
“…The dielectrics of SiN, SiNO, SiCN, SiCOH, pSiCOH for pinch off deposition were deposited in a commercial high throughput production-worthy 13.6 MHz RF 300 mm Plasma Chemical Vapor Deposition process (PECVD) system at 350 C. The dielectrics were deposited using a combination of various silane (SiH4) or carbosilane or organosilicon precursors with other reactant gases such as Ammonia ((NH 3 ), Nitrogen (N 2 ), Oxygen (O 2 ), or Nitrous Oxide (N 2 O) as described in previous publications. [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29] The advanced highly robust conformal SiN 6 was deposited by cyclic processing using Silane, Ammonia and Nitrogen. The SiCN dielectric was also deposited at 350 C using a combination of Trimethyl Silane (TMS) + Ammonia (NH 3 ) and (optionally) with Hydrogen for robust SiCN film.…”
Section: Experiment-film Deposition and Pinch Off Processmentioning
confidence: 99%
“…21,22 Table I summarizes various plasma deposited dielectric films and their properties. These dielectric films have been developed and used by our laboratories and have appeared in many of our publications [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29] over the years. Since similar materials can be deposited under various conditions and have different properties, our reference publications [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29] is to prefer to specific process chemistry and tooling that use for this pinch off deposition processes.…”
Section: Experiment-film Deposition and Pinch Off Processmentioning
confidence: 99%
“…The via-first dual damascene scheme was used [16]. The process flow, each process step, the dimension of each metal layer/via and the tool set are basically the same as those used in our standard 65 nm BEOL integrations which use k=3.0 SiCOH films at 1X, 2X and 4X wires.…”
Section: -1 Interconnect Schemementioning
confidence: 99%
“…However, integration of porous low-k materials into Cu interconnects is a significant challenge due to poor mechanical strength as increasing the film porosity to reduce initial k-value for interlayer dielectric (ILD) film, the processinduced damage on ILD, and reliability issues. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] To use a dielectric material, which itself is resistant to physical and chemical damage, is very important. As the continued technology scaling, the development of the low-k materials is very difficult due to the achievable k-value is shifted to later technology generation by description of International Technology Roadmap for Semiconductors (ITRS).…”
mentioning
confidence: 99%