Berkovich Nanoindentation on AlN Thin Films

Abstract

Berkovich nanoindentation-induced mechanical deformation mechanisms of AlN thin films have been investigated by using atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM) techniques. AlN thin films are deposited on the metal-organic chemical-vapor deposition (MOCVD) derived Si-doped (2 × 1017 cm−3) GaN template by using the helicon sputtering system. The XTEM samples were prepared by means of focused ion beam (FIB) milling to accurately position the cross-section of the nanoindented area. The hardness and Young’s modulus of AlN thin films were measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) option. The obtained values of the hardness and Young’s modulus are 22 and 332 GPa, respectively. The XTEM images taken in the vicinity regions just underneath the indenter tip revealed that the multiple “pop-ins” observed in the load–displacement curve during loading are due primarily to the activities of dislocation nucleation and propagation. The absence of discontinuities in the unloading segments of load–displacement curve suggests that no pressure-induced phase transition was involved. Results obtained in this study may also have technological implications for estimating possible mechanical damages induced by the fabrication processes of making the AlN-based devices.

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

“…Relative to other forms of AlN, the Young's modulus for amorphous PEALD AlN is also substantially reduced relative to the values of 300-320 GPa reported for poly-crystalline AlN deposited by various sputtering methods, [246][247][248] but significantly higher than the value of 66 ± 3 GPa reported by Ilic 61 for an ALD grown AlN film. For the latter, we note that Ilic reports a substantially lower mass density of 2.3 ± 0.1 g/cm 3 relative to the value of 2.7 ± 0.1 g/cm 3 determined by NRA-RBS for the PEALD AlN film in this investigation.…”

Mechanical properties of the hexagonal HoMnO3 thin films by nanoindentation

“…The detailed experimental procedures can be found elsewhere [6][7][8][9]. Before applying the loading onto the HMO specimen, nanoindentation must be conducted on the standard sample (here fused silica with Young's modulus of 68-72 GPa was used) to obtain the reasonable loading range.…”

“…Nanoindentation technique is especially well suited for characterizing the mechanical characteristics of small structures [4,5] as well as thin films and coatings [6][7][8][9]. Analysis of the load-displacement curve obtained by nanoindentation allows the primary parameters such as the hardness and Young's modulus to be obtained without visualizing the indentation.…”

Caracterização físico-química de filmes finos de nitreto de zircônio depositados por magnetron sputtering reativo

“…A nanoindentação de um filme fino de espessura micrométrica sobre substrato de silício e sem o uso de BIAS foi realizada em um equipamento marca MicroMaterialsLtda, modelo NanoTest-600 a fim de corroborar com a análise da formação efetiva do nitreto de zircônio. O substrato utilizado não implicará em nenhuma interferência na medida, pois a espessura analisada é menor do que 10% da espessura total do filme [17]. O objetivo dessa análise foi avaliar se o valor de dureza encontrado encontrase na faixa proposta pela literatura, não havendo grandes divergências.…”