Bernas ion source discharge simulation

Abstract

As the technology and applications continue to grow up, the development of plasma and ion sources with clearly specified characteristic is required. Therefore comprehensive numerical studies at the project stage are the key point for ion implantation source manufacturing (especially for low energy implantation). Recently the most commonly encountered numerical approach is the Monte Carlo particle-in-cell (MCPIC) method also known as particle-in-cell method with Monte Carlo collisions. In ITEP the 2D3V numerical code PICSIS-2D realizing MCPIC method was developed in the framework of the joint research program. We present first results of the simulation for several materials interested in semiconductors. These results are compared with experimental data obtained at the ITEP ion source test bench.

Investigating a Plasma Lens with the Initiation of Electron-Beam Discharge

“…The electron-beam propagation from the cathode of the electron gun to the discharge tube was calculated using the original VBM program [6] on the basis of using the Vlasov-Maxwell system of equations with the calculation of particle collisions by the Monte…”