Berry curvature dipole generation and helicity-to-spin conversion at symmetry-mismatched heterointerfaces

-P., Duan, S.; Qin, Feng; Chen, Peng; Yang, Xupeng; Qiu, Caiyu; Huang, Junwei; Liu, Gan; Li, Zeya; Bi, Xiangyu; Meng, Fanhao; Xi, Xiaoxiang; Yao, Jie; Ideue, Toshiya; Lian, Biao; Iwasa, Yoshihiro; Yuan, H. Q.

doi:10.1038/s41565-023-01417-z

Cited by 18 publications

(10 citation statements)

References 48 publications

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“…2a, b ), the mirror symmetry along the x direction can remain in the 1L-MoS 2 /SiP 2 heterostructure; otherwise, all crystal symmetries in MoS 2 are broken. The perturbation for the electronic structures of stacked heterostructures can be used to generate in-plane polarization and Berry curvature dipole at the interface 27 , realizing emergent interfacial phenomena such as directional quantum shift current 5 , nonlinear Hall effect 1 and circular photo-galvanic effect (Supplementary Fig. 5 ).…”

Section: Resultsmentioning

confidence: 99%

An anisotropic van der Waals dielectric for symmetry engineering in functionalized heterointerfaces

Li,

Huang,

Zhou

et al. 2023

Nat Commun

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Van der Waals dielectrics are fundamental materials for condensed matter physics and advanced electronic applications. Most dielectrics host isotropic structures in crystalline or amorphous forms, and only a few studies have considered the role of anisotropic crystal symmetry in dielectrics as a delicate way to tune electronic properties of channel materials. Here, we demonstrate a layered anisotropic dielectric, SiP2, with non-symmorphic twofold-rotational C2 symmetry as a gate medium which can break the original threefold-rotational C3 symmetry of MoS2 to achieve unexpected linearly-polarized photoluminescence and anisotropic second harmonic generation at SiP2/MoS2 interfaces. In contrast to the isotropic behavior of pristine MoS2, a large conductance anisotropy with an anisotropy index up to 1000 can be achieved and modulated in SiP2-gated MoS2 transistors. Theoretical calculations reveal that the anisotropic moiré potential at such interfaces is responsible for the giant anisotropic conductance and optical response. Our results provide a strategy for generating exotic functionalities at dielectric/semiconductor interfaces via symmetry engineering.

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Section: Resultsmentioning

confidence: 99%

An anisotropic van der Waals dielectric for symmetry engineering in functionalized heterointerfaces

Li,

Huang,

Zhou

et al. 2023

Nat Commun

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“…The LPGE occurs in all acentric matters, while the CPGE is allowed in acentric point groups with gyrotropical structures. The ways to break spatial symmetry of materials include chemical composition engineering, assembled van der Waals (vdW) heterostructure engineering, , stained Moiré pattern superlattice, and layered material distortion/curling . Periodically asymmetric atomic structures are created in these approaches to give rise to asymmetric Berry curvature distributions near the Fermi level at momenta k and − k , by tilting Weyl cones or introducing Dirac cone interlayer coupling.…”

Section: Atom Symmetry Tailored Berry Curvature For Bpvementioning

confidence: 99%

Metamaterial Induced Symmetry Engineering of Berry Curvature for Spin Light Detection

Zhang,

Shi

2024

Acc. Mater. Res.

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Section: Introductionmentioning

confidence: 99%

“…The circular photogalvanic effect (CPGE), as a second-order nonlinear effect, has been observed in a myriad of non-centrosymmetric materials/heterostructures 10 – 20 . The direction of the CPGE photocurrent can be switched by reversing the chirality of the light via the spin-flip transitions 10 , 18 , 19 or the nontrivial Berry curvature contribution 11 , 15 , 20 . To date, considerable efforts have been devoted to exploring multiple excitations in topological Weyl semimetals in the vicinity of Weyl nodes, which provides a static measurement of the chirality of Weyl fermions 7 , 21 .…”

Section: Introductionmentioning

confidence: 99%

Defect-induced helicity dependent terahertz emission in Dirac semimetal PtTe2 thin films

Chen,

Qiu,

Cheng

et al. 2024

Nat Commun

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Nonlinear transport enabled by symmetry breaking in quantum materials has aroused considerable interest in condensed matter physics and interdisciplinary electronics. However, achieving a nonlinear optical response in centrosymmetric Dirac semimetals via defect engineering has remained a challenge. Here, we observe the helicity dependent terahertz emission in Dirac semimetal PtTe2 thin films via the circular photogalvanic effect under normal incidence. This is activated by a controllable out-of-plane Te-vacancy defect gradient, which we unambiguously evidence with electron ptychography. The defect gradient lowers the symmetry, which not only induces the band spin splitting but also generates the giant Berry curvature dipole responsible for the circular photogalvanic effect. We demonstrate that the THz emission can be manipulated by the Te-vacancy defect concentration. Furthermore, the temperature evolution of the THz emission features a minimum in the THz amplitude due to carrier compensation. Our work provides a universal strategy for symmetry breaking in centrosymmetric Dirac materials for efficient nonlinear transport.

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Berry curvature dipole generation and helicity-to-spin conversion at symmetry-mismatched heterointerfaces

Cited by 18 publications

References 48 publications

An anisotropic van der Waals dielectric for symmetry engineering in functionalized heterointerfaces

An anisotropic van der Waals dielectric for symmetry engineering in functionalized heterointerfaces

Metamaterial Induced Symmetry Engineering of Berry Curvature for Spin Light Detection

Defect-induced helicity dependent terahertz emission in Dirac semimetal PtTe2 thin films

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