Beryllium diffusion in InGaAs/InGaAsP structures grown by gas source molecular beam epitaxy

Koumetz, S.; Valet, O.; Marcon, J.; Ketata, K.; Kétata, M.

doi:10.1016/s0921-5107(99)00369-4

Cited by 2 publications

(1 citation statement)

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“…A number of authors have also proposed different charge states for the diffusion mechanism: specifically, the charge states of +1, +2 for Ga and In self-interstitials, 0, −1 for Ga and In vacancies, 0, +1 for Be interstitial and −1 for Be substitutional were proposed [4][5][6][7][8][9][10][11][12][13][14][15][16] . These charge states are either inferred from works on GaAs or chosen to fit experiments.…”

Section: Introductionmentioning

confidence: 99%

Grown-in beryllium diffusion in indium gallium arsenide: An ab initio, continuum theory and kinetic Monte Carlo study

Liu

Manzhos

et al. 2017

Acta Materialia

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A roadblock in utilizing InGaAs for scaled-down electronic devices is its anomalous dopant diffusion behavior; specifically, existing models are not able to explain available experimental data on beryllium diffusion consistently. In this paper, we propose a comprehensive model, taking selfinterstitial migration and Be interaction with Ga and In into account. Density functional theory (DFT) calculations are first used to calculate the energy parameters and charge states of possible diffusion mechanisms. Based on the DFT results, continuum modeling and kinetic Monte Carlo simulations are then performed. The model is able to reproduce experimental Be concentration profiles. Our results suggest that the Frank-Turnbull mechanism is not likely, instead, kick-out reactions are the dominant mechanism. Due to a large reaction energy difference, the Ga interstitial and the In interstitial play different roles in the kick-out reactions, contrary to what is usually assumed. The DFT calculations also suggest that the influence of As on Be diffusion may not be negligible.arXiv:1608.00779v2 [cond-mat.mtrl-sci]

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