Beyond Graphene: Stable Elemental Monolayers of Silicene and Germanene

Roome, Nathanael; Carey, J. D.

doi:10.1021/am501022x

Cited by 280 publications

(191 citation statements)

References 33 publications

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“…5,16 Thus, stanene has a great potential for photo-related applications than graphene. 87 Moreover, achieving ultra-low 21 work function in graphene is very important for electronics and electron emission devices.…”

Section: Photocatalytic Propertiesmentioning

confidence: 99%

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Band gap opening in stanene induced by patterned B–N doping

Garg

Choudhuri

Mahata

et al. 2017

Phys. Chem. Chem. Phys.

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Abstract:Stanene is a quantum spin hall insulator and a promising material for electronic and optoelectronic devices. Density functional theory (DFT) calculations are performed to study the band gap opening in stanene by elemental mono-(B, N) and co-doping (B-N). Different patterned B-N co-doping is studied to change the electronic properties in stanene. A patterned B-N co-doping opens the band gap in stanene and the semiconducting nature persists with strain. Molecular dynamics (MD) simulations are performed to confirm the thermal stability of such doped system. The stress-strain study indicates that such doped system is as stable as pure stanene. Our work function calculations show that stanene and doped stanene has lower work function than graphene and thus promising material for photocatalysis and electronic devices.

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Section: Photocatalytic Propertiesmentioning

confidence: 99%

“…3 These massless Dirac Fermions propagate with a very good Fermi velocity and show high carrier mobilities at room temperature. 5 So it is very vital to synthesize atomically thin group-IV materials. Over the past few years, group-IV monolayers have been experimentally realized using different experimental techniques.…”

Section: Introductionmentioning

confidence: 99%

Band gap opening in stanene induced by patterned B–N doping

Garg

Choudhuri

Mahata

et al. 2017

Phys. Chem. Chem. Phys.

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“…8 Furthermore, phonon calculations demonstrate the stability of silicene and germanene in their ground states. 9,10 In addition, recent studies predict that SOC effect can open a 1.5 meV band gap in silicene as well as 25 meV in germanene, 7,11 useful to the topological insulators.…”

Section: Introductionmentioning

confidence: 99%

First-principles study of the stability of free-standing germanene in oxygen atmosphere

Liu

et al. 2015

Journal of Applied Physics

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The O2 dissociation and O atoms adsorption on free-standing germanene are studied by using first-principles calculations in this letter. Compared with the spontaneous dissociation of oxygen molecule on free-standing silicene in air, germanene is more stable than silicene from kinetic point of view, with overcoming energy barrier of about 0.55 eV. Especially, in contrast with the unique chemical adsorption of O2-dissociation-induced O atoms on silicene, oxygen molecule can behave a correspondingly stable adsorption on germanene surface. Moreover, single O atom adsorption on germanene is also different to that on silicene, resulting in two opposite migration pathways on germanene surface. Furthermore, once the oxygen molecule dissociates into O atoms on germanene surface, the migration and desorption of O atoms are relatively difficult under room temperature due to the strong Ge-O bonds in the O-adsorbed germanene, in favor of forming germanium oxides. The results provide compelling evidence to show that free-standing gemanene is relatively stable in oxygen,which is different to silicene essentially.

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“…According to published reports, a peak near 290 cm −1 corresponds to a "G-like" shift in the germanene layer. 22,24 Moreover, Maldonado et al studied Ge electrodeposition onto a surface enhanced Raman substrate (SERS-active Au) on which the self-limited amount of Ge had been deposited. In that study a peak at 290 cm −1 , at −1.2 V in a pH 9.2 Ge solution, was observed.…”

Section: Resultsmentioning

confidence: 99%

Electrochemical Formation of Germanene: pH 4.5

Ledina

Bui

Liang

et al. 2017

J. Electrochem. Soc.

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Germanene is a single layer allotrope of Ge, with a honeycomb structure similar to graphene. This report concerns the electrochemical formation of germanene in a pH 4.5 solution. The studies were performed using in situ Electrochemical Scanning Tunneling Microscopy (EC-STM), voltammetry, coulometry, surface X-ray diffraction (SXRD) and Raman spectroscopy to study germanene electrodeposition on Au(111) terraces. The deposition of Ge is kinetically slow and stops after 2–3 monolayers. EC-STM revealed a honeycomb (HC) structure with a rhombic unit cell, 0.44 ± 0.02 nm on a side, very close to that predicted for germanene in the literature. Ideally the HC structure is a continuous sheet, with six Ge atoms around each hole. However, only small domains, surrounded by defects, of this structure were observed in this study. The small coherence length and multiple rotations domains made direct observation with surface X-ray diffraction difficult. Raman spectroscopy was used to investigate the multi-layer Ge deposits. A peak near 290 cm−1, predicted to correspond to germanene, was observed on one particular area of the sample, while the rest resembled amorphous germanium. Electrochemical studies of germanene showed limited stability when exposed to oxygen.

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Beyond Graphene: Stable Elemental Monolayers of Silicene and Germanene

Cited by 280 publications

References 33 publications

Band gap opening in stanene induced by patterned B–N doping

Band gap opening in stanene induced by patterned B–N doping

First-principles study of the stability of free-standing germanene in oxygen atmosphere

Electrochemical Formation of Germanene: pH 4.5

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