Bi-CMOS Design of a*exp(-j*φ0) Phase Shifter as Miniature Microwave Passive Circuit Using Bandpass NGD Resonant Circuit

Abstract

The purpose of this paper is to study the RF/microwave constant phase shift (CPS) designed as an integrated circuit (IC) in 130-nm Bi-CMOS technology. The CPS understudy is constituted by a bandpass (BP) negative group delay (NGD) passive cell combined in cascade with a positive group delay (PGD) circuit. The CPS real circuit is represented by a CLC-network associated in cascade with a BP-NGD passive cell. The CPS characterization is based on the S-parameter modelling. The CPS is analytically modeled by the frequency independent transmission phase modelling by the mathematical relation φby denoting center frequency f n and frequency band ∆f . The analytical principle of the constant PS is explored by means of the RLC-network based NGD cell. The design formula of the NGD and CLC passive circuit parameters in function of desired operation frequency is established. The validity of the developed theory is verified with a proof-of-concept (POC). A CPS miniature IC having physical size 1.15 mm × 0.7 mm is designed and implemented as POCin 130-nm Bi-CMOS technology. The ADS R ⃝ and layout versus schematic of Cadence R ⃝ simulation results from 130-nm Bi-CMOS CPS POC confirms the theoretical investigation feasibility. The simulated results of the obtained CPS IC POC layout show φ 0 = −67 • +/−1 • phase shift around f n = 0.85 GHz within the frequency band delimited by f 1 = 0.73 GHz to f 2 = 0.984 GHz or ∆f = f 2 − f 1 = 254 GHz. The CPS robustness designed in 130-nm Bi-CMOS IC technology is stated by Monte Carlo statistical analysis from 1000 trials with respect to the component geometrical parameters. It was reported that the phase shift and insertion loss flatness's of the CPS IC is guaranteed lower than 5% in ∆f /f n = 30% relative frequency band around f n .