2006
DOI: 10.1063/1.2374805
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Bi Fe O 3 film deposited on Si substrate buffered with La0.7Sr0.3MnO3 electrode

Abstract: A multilayer film of BiFeO3∕La0.7Sr0.3MnO3∕SrTiO3 was deposited on Si substrate by pulsed laser deposition method, in which La0.7Sr0.3MnO3 was used as a bottom electrode. X-ray diffraction showed that the film was polycrystalline. From the x-ray photoelectron spectroscopy measurement, the valence number of the Fe ion was found to be 3+. The BiFeO3 film showed a low leakage-current density, and a large twice remanent polarization (2Pr) of 110μC∕cm2 was observed at room temperature. Owing to the ferromagnetic an… Show more

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Cited by 36 publications
(20 citation statements)
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“…Afterward, a multilayer film of BiFeO 3 /La 0.7 Sr 0.3 MnO 3 /SrTiO 3 was deposited on Si substrate by pulsed laser deposition. The BiFeO 3 film showed a low leakage-current density, and a 2P r ~ 110 μC/cm 2 was observed at room temperature [129] On the other hand, Shvartsman et al [130] showed large ferroelectric polarization ~40 μC/cm 2 in ceramic BFO, value was close to the theoretical predicted values.…”
Section: Bismuth Ferrite Bifeo 3 (Bfo)supporting
confidence: 56%
“…Afterward, a multilayer film of BiFeO 3 /La 0.7 Sr 0.3 MnO 3 /SrTiO 3 was deposited on Si substrate by pulsed laser deposition. The BiFeO 3 film showed a low leakage-current density, and a 2P r ~ 110 μC/cm 2 was observed at room temperature [129] On the other hand, Shvartsman et al [130] showed large ferroelectric polarization ~40 μC/cm 2 in ceramic BFO, value was close to the theoretical predicted values.…”
Section: Bismuth Ferrite Bifeo 3 (Bfo)supporting
confidence: 56%
“…5,26,29,33,42,45,50,54,56,57,59,66,67,87, Table 12 lists the ferroelectric properties of several types of BFO thin films, which were prepared by different preparation techniques and on different substrates. One can see from Table 12 that their ferroelectric properties are strongly affected by several factors, such as types of substrates, 23,97,281,297,299,321,322 preparation techniques 57,66,97,286,322 and use of buffer layers. 23,97,315,317,321 In addition, there are orientation modifications induced by some of these factors, which play a big role in the ferroelectric properties of BFO thin films.…”
Section: Phase Structure Vs Piezoelectricitymentioning
confidence: 99%
“…One can see from Table 12 that their ferroelectric properties are strongly affected by several factors, such as types of substrates, 23,97,281,297,299,321,322 preparation techniques 57,66,97,286,322 and use of buffer layers. 23,97,315,317,321 In addition, there are orientation modifications induced by some of these factors, which play a big role in the ferroelectric properties of BFO thin films. 66,282 For example, Wu et al 66 investigated the orientation [e.g., (111), (100), 8,282 On the other hand, the ferroelectric properties can be properly characterized only when there is a low leakage current.…”
Section: Phase Structure Vs Piezoelectricitymentioning
confidence: 99%
See 1 more Smart Citation
“…There are many reports on different strategies developed to tackle the growth of perovskites films onto silicon. A large variety of deposition techniques [7][8][9][10] and buffers [11][12][13][14] have been employed, in particular, to attain epitaxial La0.67Sr0.33MnO3 (LSMO) ferromagnetic films on silicon substrates minimizing the effect of faults and strains. LSMO is a half-metal ferromagnet, already tested as metallic electrode in magnetic tunnel junctions [15] and combined with ferroelectric in artificial multiferroic heterostructures [16].…”
Section: Introductionmentioning
confidence: 99%