Bi₂Te₃based passively Q-switched at 1042.76 and 1047 nm wavelength

Abstract

In this paper, we propose and demonstrate the generation of dual wavelength based photonic crystal fiber passively Q-switched using few-layer TI:Bi 2 Te 3 (bismuth telluride) saturable absorbers in a 1 micron waveband. The system employs a few-layer bismuth, induced onto a fiber ferrule using a dry oven method. A centered dual-wavelength output at 1042.76 and 1047.0 nm was produced from the Ytterbium doped fiber laser setup by incorporating 10 cm of photonic crystal fiber and finely adjusting the polarization controller. The self-started Q-switch had a pump power of 132.15 mW and a frequency ranging from 3.79 to 15.63 kHz. Therefore, TI:Bi 2 Te 3 was suitable as a potential broadband SA in a 1 micron region.

Generation of Microsecond Ytterbium-Doped Fiber Laser Pulses using Bismuth Telluride Thin Film as Saturable Absorber

“…Although repetition rate over 50 kHz were achieved (Gao et al 2018;Lee et al 2014;Li et al 2014;Lin et al 2018;Sun et al 2015;Yang et al 2018), these work require higher pumping power. This work also produces better results than our previous work (Salim et al 2017) that uses more complex process of implementing the SA. While the work by Luo et al (2013) shows nearly similar result, the optical deposition method that was used in this work is simple and very low cost.…”

“…However, those work focus at wavelength of 1550 nm, using erbium fiber laser, which are different from the 1-µm region. Passive Q-switched ytterbium fiber lasers using Bi 2 Te 3 have also been reported, such as in our previous work (Salim et al 2017). It generated dual-wavelength Q-switched laser pulses by using photonics crystal fiber (PCF).…”

Dual-tapered Mach Zehnder Interferometer for Dual-wavelength Q-Switched YDFL using Molybdenum Diselenide

“…In this paper, we have achieved Q-switched dual-wavelength by employing MoSe2 SA in YDFL. Dual-tapered microfiber [15] was used as an optical filter to generate dual-wavelengths laser [16,17] centered at 1035.8 and 1040.2nm with wavelength interval and repetition rates of 4.4 nm and 13.5 to 54.3 kHz respectively.…”

Two-dimensional tin diselenide as the saturable absorber for passively Q-switched Er:YAP 3 μm solid-state laser

“…In comparison with other topical 2D SA, SnSe 2 shows many advantages. For instance, SnSe 2 SA has a large modulation depth, and the high damage threshold of SnSe 2 allow it to obtain high power pulse laser [17,18]. Unlike the complex manufacturing technology of TIs such as Bi 2 Te 3 [18], SnSe 2 nanosheets can be prepared through simple methods such as solvothermal treatment, chemical vapor deposition and ultrasonic liquid-phase exfoliation (LPE), due to the strong in plane covalent bonding and relatively weak noncovalent bonding between SnSe 2 layers [19,20].…”

“…For instance, SnSe 2 SA has a large modulation depth, and the high damage threshold of SnSe 2 allow it to obtain high power pulse laser [17,18]. Unlike the complex manufacturing technology of TIs such as Bi 2 Te 3 [18], SnSe 2 nanosheets can be prepared through simple methods such as solvothermal treatment, chemical vapor deposition and ultrasonic liquid-phase exfoliation (LPE), due to the strong in plane covalent bonding and relatively weak noncovalent bonding between SnSe 2 layers [19,20]. Employing the SnSe 2 SA, Wang et al realized a Q-switched Tm:YAP laser operation at 1.9 µm in 2020, with the shortest pulse duration of 716 ns, and a maximum pulse repetition frequency of 54.6 kHz [21].…”