Bi2O2S nanosheets anchored on reduced graphene oxides as superior anodes for aqueous rechargeable alkaline batteries

Effect of Cr2O3 nanosheet insertion on the deuterium permeation behavior of a Cr-Zr-O coating

“…On the other hand, the insertion of Cr 2 O 3 NSs distributed inside the coating can create new interfaces that will prolong the pathway for deuterium permeation; however, the distribution of NSs is nonuniform because of the segregation of Cr 2 O 3 in the coating fabrication process. All these factors can help to achieve a higher PRF [28,29]. However, the addition of surplus NSs deteriorates the integrality of the coating and also increases the porosity, which will accelerate deuterium permeation undesirably.…”

The line defects in two-dimensional Bi2O2S: enhanced photocurrents in the infrared region

“…4–7 In addition to graphene, some novel 2D semiconductors with non-zero band gaps have also been investigated and, among the 2D semiconductors, Bi 2 O 2 X (X = S, Se or Te) is a famous candidate. 8–27 Different from the well-known van der Waals (vdW) interactions in graphite, in the bulk Bi 2 O 2 X the adjacent layers are connected through electrostatic forces. Nevertheless, 2D Bi 2 O 2 X materials have been successfully synthesized in recent experiments, 10–19 and they have the so-called “zipper” structures.…”

“…8–27 Different from the well-known van der Waals (vdW) interactions in graphite, in the bulk Bi 2 O 2 X the adjacent layers are connected through electrostatic forces. Nevertheless, 2D Bi 2 O 2 X materials have been successfully synthesized in recent experiments, 10–19 and they have the so-called “zipper” structures. 18–21…”

“…It is well known that 2D Bi 2 O 2 S has a suitable band gap, high carrier mobility, long carrier lifetime, environmental friendliness and excellent stability, 21–23 and thus can be used in different fields such as the design of photodetectors. 15–17 In the present study, using this 2D semiconductor as an example, we theoretically investigated the structures and basic properties of the native line defects. Meanwhile, the influences of the line defects on the photoelectronic properties were also discussed.…”