Bias-dependent hole transport through a multi-channel silicon nanowire transistor with single-acceptor-induced quantum dots

Abstract

Quantum transport in multi-channel silicon nanowire transistors presents enhanced data capacity and driving ability by overlapping current, which are essential for constructing quantum logic platforms. However, the overlapping behavior of...

The utilization of quantum dot labeling as a burgeoning technique in the field of biological imaging

“…By exploring the bias-dependent hole transport spectra in lightly boron-doped multi-channel silicon nanowire transistors, they have provided valuable insights into the mechanisms of quantum transport through multiple channels. 91 Although there are challenges in probe design and data analysis, the application prospect of quantum dots in polychromatic imaging and multiple detection is still broad. This technology provides researchers with a versatile tool to help them gain a more comprehensive understanding of life processes at the molecular and cellular levels.…”

“…By exploring the bias-dependent hole transport spectra in lightly boron-doped multi-channel silicon nanowire transistors, they have provided valuable insights into the mechanisms of quantum transport through multiple channels. 91 …”

Recent advances in hole-spin qubits

“…Finally, we address boron acceptor dopants in silicon, which represent another option for hole-spin qubits. Theses dopants have been investigated in natural [195,196] and isotopically purified silicon [197], as well as gated structures [198][199][200]. Characterizations of the electronic states of a single dopant or two coupled acceptors [196,199] can be obtained from scanning tunneling spectroscopy [195,196,201] or transport measurements [198,199].…”