2003
DOI: 10.1016/s0925-9635(02)00294-7
|View full text |Cite
|
Sign up to set email alerts
|

Bias enhanced nucleation of diamond on silicon (100) in a HFCVD system

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
23
0

Year Published

2006
2006
2018
2018

Publication Types

Select...
7
2

Relationship

2
7

Authors

Journals

citations
Cited by 56 publications
(23 citation statements)
references
References 15 publications
0
23
0
Order By: Relevance
“…The deposition of the NCD film on a foreign substrate is a 2 steps process consisting on a nucleation phase, followed by an overgrowth stage. The HF-NCD samples were nucleated under similar conditions to the ones described in ref [25] by bias enhanced nucleation 50 (BEN) performed in-situ in the same reactor used for the overgrowth, resulting in crystallite densities of more than 10 10 cm 2 . For the MW-NCD samples the seeding process described in ref [26] was used to form the nucleation layer.…”
Section: Methodsmentioning
confidence: 99%
“…The deposition of the NCD film on a foreign substrate is a 2 steps process consisting on a nucleation phase, followed by an overgrowth stage. The HF-NCD samples were nucleated under similar conditions to the ones described in ref [25] by bias enhanced nucleation 50 (BEN) performed in-situ in the same reactor used for the overgrowth, resulting in crystallite densities of more than 10 10 cm 2 . For the MW-NCD samples the seeding process described in ref [26] was used to form the nucleation layer.…”
Section: Methodsmentioning
confidence: 99%
“…The formation of nanodiamond nuclei was driven by Bias Enhanced Nucleation (BEN) in a HFCVD (Hot Filament CVD) system (Janischowsky et al, 2003), while processing the substrate at a temperature of 800 • C in an atmosphere of 0.75% CH 4 in H 2 at a pressure of 1.5 kPa, yielding a nucleation density of approximately 3 × 10 10 cm −2 . Onto this substrate a 200 nm layer of intrinsic NCD was grown, keeping the substrate at a temperature of ∼740 • C in a gas mixture of 0.3% CH 4 in H 2 , at a pressure 2.5 kPa.…”
Section: Device Fabrication and Designmentioning
confidence: 99%
“…Due to the need of a conductive substrate to perform BEN, thin conductive interlayers were deposited on the sapphire to be used as a nucleation layer for the growth of the undoped NCD buffer layer; the interlayers materials and thicknesses were tuned in order to minimize light absorption and to maximize the nucleation density [30]. This process led to a nucleation density of approximately 3 × 10 10 cm −2 , comparable with nucleation densities on standard Si wafers [31]. The BEN process was carried out with the following parameters: substrate temperature 800°C, CH 4 to H 2 ratio 0.75%, pressure of 1.5 kPa.…”
Section: Methodsmentioning
confidence: 99%