2020
DOI: 10.1088/2399-1984/ab92f3
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Bias-selected full Red/Green/Blue color sensing and imaging based on inversely stacked radial PINIP junctions

Abstract: Seeking an ultra-compact new architecture or strategy to achieve filter-less Red/Green/Blue (RGB) color sensing is critical for developing a wide range of high-resolution, low-cost and flexible color discrimination and imaging applications. In this work, a new inversely stacked biomimetic radial junction (RJ) PINIP photodetector, comprising of coaxial multilayers of intrinsic and doped hydrogenated amorphous Si (a-Si:H) thin films coated over silicon nanowires (SiNWs), is demonstrated, which can accomplish bia… Show more

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Cited by 2 publications
(2 citation statements)
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“…In recent years, flexible and lightweight solar cells/photodetectors with a high PTWR have attracted much attention for their remarkable capabilities in wearable and biomimetic/bio-friendly applications. [22,[150][151][152][153] Recently, X. Sun et al have successfully demonstrated an exceptionally robust a-Si:H RJ solar cell on ultrasoft, ultrathin, and lightweight Al foil, [77] where the discrete and firmly standing SiNWs can act as firmly anchor sites to host the subsequently deposited amorphous thin films, as shown in Figure 11.…”
Section: Flexible Rj Thin Film Solar Cells On Al Foilmentioning
confidence: 99%
“…In recent years, flexible and lightweight solar cells/photodetectors with a high PTWR have attracted much attention for their remarkable capabilities in wearable and biomimetic/bio-friendly applications. [22,[150][151][152][153] Recently, X. Sun et al have successfully demonstrated an exceptionally robust a-Si:H RJ solar cell on ultrasoft, ultrathin, and lightweight Al foil, [77] where the discrete and firmly standing SiNWs can act as firmly anchor sites to host the subsequently deposited amorphous thin films, as shown in Figure 11.…”
Section: Flexible Rj Thin Film Solar Cells On Al Foilmentioning
confidence: 99%
“…In recent work, we demonstrated a filterless imager based on a symmetric inversely stacked radial junction (RJ) PINIP (here, P, I, and N stand for p-type, intrinsic, and n-type amorphous Si film) photodetector fabricated around silicon nanowires (SiNWs) [19], where different incident wavelengths are absorbed with different penetration depths in stacked PIN junctions (as shown in the inset of Figure 1a). Such a 3D structure can confine light within the nanowire and redistribute the light field into different absorber layers [20], where the inner layer can absorb long wavelengths while the outer layer can absorb short wavelengths.…”
Section: Introductionmentioning
confidence: 99%