Bias-switchable photoconductance in surface-modified graphene oxide by green synthesized ZnO nanoparticles

Mistry, Hiral M.; Deshpande, M.P.; Hirpara, Anilkumar B.; Suchak, Nidhishree M.; Chaki, Sunil H.; Bhatt, Sandip V.

doi:10.1016/j.jallcom.2023.172328

Cited by 10 publications

(1 citation statement)

References 59 publications

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“…The strong diffraction peak of GO observed at 2θ = 10.8°is located in the (001) crystal plane of the expanded graphene structure with oxygen-containing groups integrated between the carbon sheets. 24,41 The broad diffraction peak of RGO at 2θ = 23.5°indicates the disordered (002) crystal plane due to the reduction effect of the annealing method. 42 The diffraction peaks of Se-MT consist of the with crystal face of t-Se, which corresponds to the standard database no.…”

Section: Materials Characterizationmentioning

confidence: 99%

Reduced Graphene Oxide/Se Microtube p–p Heterojunction for Self-Powered UV–NIR Broadband Photodetectors

Yu,

Du,

Zheng

et al. 2024

ACS Appl. Nano Mater.

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The broadband (UV−vis−NIR) photodetectors (PDs) based on reduced graphene oxide (RGO) with high carrier mobility have the potential to expand the application of optical devices. In this report, the new p−p Se/RGO heterojunction combined with RGO nanosheets and a highly crystalline p-type selenium microtube (Se-MT) was prepared by the simple spin-coating approach. The Se-MT, with a maximum length of 3 mm, is beneficial to deposited electrodes at a low cost. The band gap of the RGO layer is controlled by low-temperatureannealed graphene oxide (GO) nanosheets. Both Se/RGO PD and Se/ GO PD exhibit self-powered characteristics and have good responsivity, detectivity, and on/off ratio in a wide wavelength range of UV−NIR (280−1000 nm). Compared to pure Se-MT PD (11.8 mA W −1 and 1.09 × 10 9 jones), Se/RGO PD shows 14-and 135-times enhancement for the responsivity of 168.1 mA W −1 and the specific detectivity of 1.48 × 10 11 jones, especially at 368 nm without applied bias voltage, respectively. Se/RGO PD displays an on/off ratio of 1049 with a fast response speed of 18 μs/4.76 ms at every cycle. Remarkably, the responsivity of Se/RGO PD and Se/GO PD under 1000 nm irradiation is 19.5 and 12.1 mA W −1 , respectively, with regard to 390 and 242 times larger than that of Se-MT PD (0.05 mA W −1 ). Due to the enhanced optical absorption of the RGO layer and improved band gap alignment to provide the high built-in field at the Se/RGO heterojunction that eventually results in the successful separation of the charge carriers, the outstanding self-powered operation has been demonstrated over the UV−NIR wavelength range. The findings show great promise for high-performance broadband devices with independent detection.

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Section: Materials Characterizationmentioning

confidence: 99%