Bias voltage dependent electrochemical impedance spectroscopy of p- and n-type silicon substrates

Chemla, M.; Dufrêche, Jean‐François; Darolles, Isabelle; Rouelle, François; Devilliers, Didier; Petitdidier, S.; Lévy, Didier

doi:10.1016/j.electacta.2005.05.028

Cited by 19 publications

(16 citation statements)

References 33 publications

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“…In this case, the current may be expressed by the Equation (3) which is modified by a term g s , which represents the surface generation rate of the charge carriers. An analogous justification was given to explain the behaviour of p-silicon in reduction reactions [32].…”

Section: Ad Samplesmentioning

confidence: 96%

“…Reliable data can only be obtained far from V fb , so its value must be calculated by an extrapolation method. Following the suggestions of certain authors [32,35], more reliable information can be obtained from the resistance component of the circuit, which, in depletion conditions, assumes very high values. The trend of 1/R with the potential can be effectively used: its value is almost zero in all the depletion region and suddenly rises to almost infinity when the potential approaches V fb , which in turn can be evaluated without an extrapolation procedure.…”

Section: Runs In Sulphuric Acid -Mott-shottky Analysismentioning

confidence: 99%

“…In fact, in the absence of appreciable faradic current, EIS measurements performed at potential lower than the flat band potential value can give useful information on the depletion layer charge distribution at p-semiconductors: in particular, just one semicircle should appear in the Nyquist diagram corresponding to the capacitive response of the space charge region [32].…”

Section: Runs In Sulphuric Acid -Mott-shottky Analysismentioning

confidence: 99%

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Characterization of boron doped diamond during oxidation processes: Relationship between electronic structure and electrochemical activity

et al. 2006

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This work investigates the behaviour of BDD samples differently aged by an oxidative treatment. Two series of data are presented: the first in acid solutions was used to derive information about the electronic structure of the samples, whereas measurements in equimolar ferro/ferri cyanide solutions were performed to test the activity of the samples towards charge transfer reaction. Flat band potential as well as energy levels of conduction and valence bands were calculated for new and aged samples. These parameters, together with the current voltage response, are crucial information for a comprehensive interpretation of the behaviour of samples

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Section: Ad Samplesmentioning

confidence: 96%

Section: Runs In Sulphuric Acid -Mott-shottky Analysismentioning

confidence: 99%

Section: Runs In Sulphuric Acid -Mott-shottky Analysismentioning

confidence: 99%

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Characterization of boron doped diamond during oxidation processes: Relationship between electronic structure and electrochemical activity

et al. 2006

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“…As compared with that of conventional p-type semiconductor electrodes (e.g. p-Si [30]), Fig. 5 exhibits a complicated I-V response that consists of three parts: anodic, cathodic and passive (I % 0) regions.…”

Section: Photo-electrochemical Characterization and I-v Response Of Smentioning

confidence: 99%

“…The optical absorbance of the photoelectrode was measured in the transmission mode, using a Pharmacia Biotech Ultrospec 4000 UV-visible spectrometer. The potential of flat band and the type of electrodeposited semiconductor composite were determined through Mott-Schottky measurements [30][31][32], using impedance data recorded at different bias (dc) potentials.…”

Section: Semiconductor Film Characterizationmentioning

confidence: 99%

A nanocomposite p-type semiconductor film for possible application in solar cells: Photo-electrochemical studies

Lashgari

Shafizadeh

Zeinalkhani

2015

Solar Energy Materials and Solar Cells

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Study of the Si Chemical Bonding and the Semiconductive Behavior of SiCN Coatings and their Correlation with Anti‐Corrosion Properties

Loir

Pech

Steyer

et al. 2007

Plasma Processes & Polymers

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Amorphous hydrogenated SiCN coatings have been deposited by a PACVD process on M2 steel and silicon substrates. The nitrogen content within the coatings was varied by changing the synthesis conditions. The chemical composition and nature of bonding have been studied by XPS and by X‐ray‐induced AES. The electrochemical and the semi‐conductive properties were evaluated by polarization curves and by using the Mott‐Schottky experiments, respectively. When increasing the N/Si ratio, we observed an increase of Si atoms inside the film structure, which were directly bonded to nitrogen. This gradual incorporation of N modified the electrochemical behavior of the films displaying a variation of the density of charge carriers and the semiconductive behavior (p‐ to n‐type). The modified Auger parameter of silicon was used to determine the nature of the silicon chemical bonding inside the [SiCN]‐based coatings and to predict their corrosion behavior.

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Bias voltage dependent electrochemical impedance spectroscopy of p- and n-type silicon substrates

Cited by 19 publications

References 33 publications

Characterization of boron doped diamond during oxidation processes: Relationship between electronic structure and electrochemical activity

Characterization of boron doped diamond during oxidation processes: Relationship between electronic structure and electrochemical activity

A nanocomposite p-type semiconductor film for possible application in solar cells: Photo-electrochemical studies

Study of the Si Chemical Bonding and the Semiconductive Behavior of SiCN Coatings and their Correlation with Anti‐Corrosion Properties

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